BAT120

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 2001 Aug 27 2003 Aug 04 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. MARKING TYPE NUMBER BAT120A BAT120C BAT120S MARKING CODE AT120A AT120C AT120S Fig.1 handbook, halfpage BAT120 series PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 4 1 Top view 2 3 MSB002 - 1 Simplified outline (SOT223) and pin configuration. 4 1 3 1 4 3 1 4 3 2 n.c. 2 n.c. MGL171 2 n.c. MGL172 MGL173 a. BAT120A. b. BAT120C. Fig.2 BAT120 diode configurations and symbols. c. BAT120S. 2003 Aug 04 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature operating ambient temperature tp < 10 ms; half sinewave; JEDEC method tp = 100 µs − − − − PARAMETER CONDITIONS BAT120 series MIN. MAX. UNIT 25 1 10 0.5 +150 125 +125 V A A A °C °C °C −65 − −65 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 100 mA IF = 1 A IR reverse current VR = 20 V; note 1; see Fig.4 VR = 25 V; note 1; see Fig.4 VR = 20 V; Tj = 100 °C; note 1 Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 100 UNIT K/W diode capacitance f = 1 MHz; VR = 4 V; see Fig.5 260 400 80 − − 100 300 450 500 1 10 − mV mV µA mA mA pF PARAMETER CONDITIONS TYP. MAX. UNIT 2003 Aug 04 3 Philips Semiconductors Product specification Schottky barrier double diodes GRAPHICAL DATA BAT120 series handbook, halfpage 104 MBL886 105 handbook, halfpage IR (µA) (1) (2) (3) MHB970 IF (mA) 103 (1) (2) (3) (4) 104 103 102 102 (4) 10 10 1 0 (1) Tamb = 125 °C. (2) Tamb = 100 °C. 1 200 400 600 VF (mV) 800 0 10 20 VR (V) 30 (3) Tamb = 75 °C. (4) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.4 Reverse current as a function of reverse voltage; typical values. 103 handbook, halfpage MBK571 Cd (pF) 102 10 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 04 4 Philips Semiconductors Product specification Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BAT120 series SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Aug 04 5 Philips Semiconductors Product specification Schottky barrier double diodes DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAT120 series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Aug 04 6 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp7 Date of release: 2003 Aug 04 Document order number: 9397 750 11054