BAT960

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode FEATURES • High current capability • Very low forward voltage • Ultra small plastic SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Ultra high-speed switching • rectification • DC/DC conversion • Switch mode power supply • Inverse polarity protection. GENERAL DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. handbook, halfpage 6 BAT960 PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 1, 2 5, 6 3, 4 MHC310 1 2 3 Marking code: B9. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFSM Tstg Tj Tamb Note 1. Only valid, if pins 3 and 4 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature t = 8.3 ms half sinewave; JEDEC method; note 1 CONDITIONS − − − −65 − −65 MIN. 1 8 +150 125 +125 MAX. 23 V A A °C °C °C UNIT 2003 May 01 2 Philips Semiconductors Product specification Schottky barrier diode THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 note 2 Notes 1. Refer to SOT666 standard mounting conditions. 2. Mounted on printed circuit-board, 1 cm2 copper area. Soldering The only recommended soldering method is reflow soldering. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS IF = 10 mA IF = 100 mA IF = 1000 mA; note 1; see Fig.2 IR reverse current VR = 5 V; note 2 VR = 8 V; note 2 VR = 15 V; note 2; see Fig.3 Cd Notes 1. Only valid, if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land. 2. Pulse test: tp = 300 µs; δ = 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 TYP. 240 300 480 5 7 10 19 VALUE 405 215 BAT960 UNIT K/W K/W MAX. 270 350 550 10 20 50 25 UNIT mV mV mV µA µA µA pF 2003 May 01 3 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL DATA BAT960 103 handbook, halfpage IF (mA) 102 MHC311 105 handbook, halfpage IR (µA) (1) MHC312 104 103 (1) (2) (3) (2) 10 102 (3) 1 10 10−1 0 0.2 0.4 VF (V) 0.6 1 0 5 10 15 20 VR (V) 25 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 80 MHC313 Cd (pF) 60 40 20 0 0 5 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 May 01 4 Philips Semiconductors Product specification Schottky barrier diode PACKAGE OUTLINE Plastic surface mounted package; 6 leads BAT960 SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2003 May 01 5 Philips Semiconductors Product specification Schottky barrier diode DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAT960 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 May 01 6 Philips Semiconductors Product specification Schottky barrier diode NOTES BAT960 2003 May 01 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2003 May 01 Document order number: 9397 750 11067