BAV170

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAV170 Low-leakage double diode Product specification Supersedes data of 1999 May 11 2003 Mar 25 Philips Semiconductors Product specification Low-leakage double diode FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION • Low-leakage current applications in surface mounted circuits. MARKING 3 handbook, 4 columns BAV170 PINNING PIN 1 2 3 DESCRIPTION anode anode common cathode DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. 2 1 2 1 TYPE NUMBER BAV170 Note MARKING CODE(1) JX* 3 Top view MAM108 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. 2003 Mar 25 2 Philips Semiconductors Product specification Low-leakage double diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 75 V VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.003 3 2 0.8 5 80 − 3 − − − − 900 PARAMETER CONDITIONS TYP. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 − − − − − 85 75 PARAMETER CONDITIONS MIN. BAV170 MAX. UNIT V V mA mA mA 215 125 500 A A A mW °C °C 250 +150 150 MAX. UNIT mV mV mV mV nA nA pF µs 1000 1100 1250 2003 Mar 25 3 Philips Semiconductors Product specification Low-leakage double diode THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. GRAPHICAL DATA MBG521 BAV170 PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS note 1 VALUE 360 500 UNIT K/W K/W handbook, halfpage 300 handbook, halfpage 300 MLB752 - 1 IF (mA) 200 (1) IF (mA) 200 (1) (2) (3) 100 (2) 100 0 0 100 Tamb (oC) 0 200 0 0.4 0.8 1.2 V F (V) 1.6 Device mounted on a FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; per diode. 2003 Mar 25 4 Philips Semiconductors Product specification Low-leakage double diode BAV170 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. 10 2 handbook, halfpage IR (nA) 10 (1) MLB754 handbook, halfpage 2 MBG526 Cd (pF) 1 1 10 1 10 2 (2) 10 3 0 0 50 0 5 10 15 100 150 T j ( C) o 200 VR (V) 20 VR = 75 V. (1) Maximum values. (2) Typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature; per diode. Fig.6 Diode capacitance as a function of reverse voltage; per diode; typical values. 2003 Mar 25 5 Philips Semiconductors Product specification Low-leakage double diode BAV170 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 Ω VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal Fig.7 Reverse recovery time test circuit and waveforms. 2003 Mar 25 6 Philips Semiconductors Product specification Low-leakage double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads BAV170 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Mar 25 7 Philips Semiconductors Product specification Low-leakage double diode DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAV170 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Mar 25 8 Philips Semiconductors Product specification Low-leakage double diode NOTES BAV170 2003 Mar 25 9 Philips Semiconductors Product specification Low-leakage double diode NOTES BAV170 2003 Mar 25 10 Philips Semiconductors Product specification Low-leakage double diode NOTES BAV170 2003 Mar 25 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2003 Mar 25 Document order number: 9397 750 10965