BC846A

DISCRETE SEMICONDUCTORS DATA SHEET BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of 2002 Feb 04 2004 Feb 06 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. handbook, halfpage BC846; BC847; BC848 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848B Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848B − DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 MARKING CODE(1) 1D* 1A* 1B* 1H* 1E* 1F* 1G* 1K* Fig.1 Simplified outline (SOT23) and symbol. Top view 1 2 1 2 MAM255 2004 Feb 06 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC846 BC847 BC848 VCEO collector-emitter voltage BC846 BC847 BC848 VEBO emitter-base voltage BC846; BC847 BC848 IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BC846; BC847; BC848 MIN. − − − − − − − − − − − − −65 − −65 MAX. 80 50 30 65 45 30 6 5 100 200 200 250 +150 150 +150 V V V V V V V V UNIT mA mA mA mW °C °C °C VALUE 500 UNIT K/W 2004 Feb 06 3 Philips Semiconductors Product specification NPN general purpose transistors CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC846A; BC847A BC846B; BC847B; BC848B BC847C DC current gain BC846 BC847 BC846A; BC847A BC846B; BC847B; BC848B BC847C VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V BC846; BC847; BC848 MIN. − − − − − − 110 110 110 200 420 − − − − 580 − − 100 − TYP. − − − 90 150 270 − − 180 290 520 90 200 700 900 660 − 2.5 − 2 MAX. 15 5 100 − − − 450 800 220 450 800 250 600 − − 700 770 − − 10 UNIT nA µA nA mV mV mV mV mV mV pF MHz dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Feb 06 4 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage 400 MGT723 handbook, halfpage V hFE (1) 1200 BE (mV) 1000 MGT724 300 800 (1) (2) 200 (2) 600 (3) (3) 400 100 200 0 10−1 1 10 102 I C (mA) 103 0 10−1 1 10 102 I C (mA) 103 BC846A; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC846A; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MGT725 handbook, halfpage 1200 VBEsat (mV) 1000 MGT726 (1) 800 (2) 102 (1) (2) (3) 600 (3) 400 200 10 10−1 1 10 102 I C (mA) 103 0 10−1 1 10 102 I C (mA) 103 BC846A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC846A; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Feb 06 5 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage 600 MGT727 handbook, halfpage (1) hFE 500 1200 VBE (mV) 1000 MGT728 (1) 400 (2) 800 (2) 300 600 (3) 200 (3) 400 100 200 0 10−1 1 10 102 I C (mA) 103 0 10−2 10−1 1 10 102 103 I C (mA) BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MGT729 handbook, halfpage 1200 VBEsat (mV) 1000 MGT730 (1) 800 (2) 600 (3) 102 (1) 400 (3) (2) 200 10 10−1 1 10 102 I C (mA) 103 0 10−1 1 10 102 I C (mA) 103 BC847B; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847B; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Feb 06 6 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage 1200 MGT731 handbook, halfpage hFE 1000 (1) 1200 VBE (mV) 1000 MGT732 800 (2) 800 (1) (2) 600 600 400 (3) 400 (3) 200 200 0 10−1 1 10 102 I C (mA) 103 0 10−2 10−1 1 10 102 103 I C (mA) BC847C; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847C; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MGT733 handbook, halfpage V 1200 BEsat (mV) 1000 MGT734 (1) 800 (2) 600 (3) 102 (1) 400 200 (3) (2) 10 10−1 1 10 102 I C (mA) 103 0 10−1 1 10 102 I C (mA) 103 BC847C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847C; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Feb 06 7 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC846; BC847; BC848 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 Feb 06 8 Philips Semiconductors Product specification NPN general purpose transistors DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development BC846; BC847; BC848 DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Feb 06 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp10 Date of release: 2004 Feb 06 Document order number: 9397 750 12395