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BC857BV

BC857BV

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    BC857BV - PNP general purpose double transistor - NXP Semiconductors

  • 数据手册
  • 价格&库存
BC857BV 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 10 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV. MARKING TYPE NUMBER BC857BV MARKING CODE 3F 6 5 4 BC857BV PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 5 4 TR2 TR1 1 Top view 2 3 MAM450 1 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2001 Nov 07 2 Philips Semiconductors Product specification PNP general purpose double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − − −65 − −65 −50 −45 −5 PARAMETER CONDITIONS MIN. BC857BV MAX. UNIT V V V mA mA mA mW °C °C °C mW −100 −200 −200 200 +150 150 +150 UNIT K/W 2001 Nov 07 3 Philips Semiconductors Product specification PNP general purpose double transistor CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VBE VCEsat VBEsat Cc Ce fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-base cut-off current emitter-base cut-off current DC current gain base-emitter voltage IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V IC = −2 mA; VCE = −5 V IC = −100 mA; IB = −5. mA; note 1 base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = −10 mA; IB = −0.5 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz − − − 200 −600 − − − − − 100 − − − − −655 − − −755 − 10 − PARAMETER CONDITIONS MIN. TYP. BC857BV MAX. −15 −5 −100 450 −750 −100 −400 − 2.2 − − UNIT nA µA nA mV mV mV mV pF pF MHz collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA 2001 Nov 07 4 Philips Semiconductors Product specification PNP general purpose double transistor Graphical information BC857BV MHB975 BC857BV handbook, halfpage 1000 handbook, halfpage hFE 800 −1200 VBE (mV) −1000 −800 MHB976 (1) 600 (1) −600 −400 (2) 400 (2) (3) 200 (3) −200 −0 −10−2 0 −10−2 −10−1 1 10 102 103 IC (mA) −10−1 −1 −10 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. −102 −103 IC (mA) Fig.3 Fig.2 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. −104 handbook, halfpage VCEsat (mV) MHB977 handbook, halfpage V −1200 BEsat (mV) −1000 −800 MHB978 −103 (1) (2) −600 (3) −102 (1) −400 (2) (3) −200 −10 −10−1 −1 −10 −102 −103 IC (mA) 0 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 07 5 Philips Semiconductors Product specification PNP general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads BC857BV SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2001 Nov 07 6 Philips Semiconductors Product specification PNP general purpose double transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BC857BV This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Nov 07 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09041
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