BCM857BS

BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Package Philips BCM847BV BCM847BS BCM847DS SOT666 SOT363 SOT457 JEITA SC-88 SC-74 PNP/PNP complement BCM857BV BCM857BS BCM857DS Matched version of BC847BV BC847BS - Type number 1.2 Features I Current gain matching I Base-emitter voltage matching I Drop-in replacement for standard double transistors 1.3 Applications I Current mirror I Differential amplifier 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA Conditions open base Min 200 Typ 290 Max 45 100 450 Unit V mA Per transistor Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors Quick reference data …continued Parameter hFE matching VBE matching Conditions VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 2 mA [1] Table 2. Symbol Per device hFE1/hFE2 VBE1−VBE2 Min 0.9 - Typ 1 - Max 2 Unit [2] mV [1] [2] The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 001aab555 sym020 Simplified outline 6 5 4 Symbol 6 5 4 TR2 TR1 1 2 3 3. Ordering information Table 4. Ordering information Package Name BCM847BV BCM847BS BCM847DS SC-88 SC-74 Description plastic surface-mounted package; 6 leads plastic surface-mounted package; 6 leads plastic surface-mounted package (TSOP6); 6 leads Version SOT666 SOT363 SOT457 Type number 4. Marking Table 5. Marking codes Marking code[1] 3A M1* R6 Type number BCM847BV BCM847BS BCM847DS [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 2 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation SOT666 SOT363 SOT457 Per device Ptot total power dissipation SOT666 SOT363 SOT457 Tj Tamb Tstg [1] [2] Conditions open emitter open base open collector single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1][2] [1] [1] Min - Max 50 45 6 100 200 Unit V V V mA mA Per transistor - 200 200 250 mW mW mW Tamb ≤ 25 °C [1][2] [1] [1] −65 −65 300 300 380 150 +150 +150 mW mW mW °C °C °C junction temperature ambient temperature storage temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT666 SOT363 SOT457 Conditions in free air [1][2] [1] [1] Min Typ Max Unit Per transistor - - 625 625 500 K/W K/W K/W BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 3 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors Thermal characteristics …continued Parameter thermal resistance from junction to ambient SOT666 SOT363 SOT457 Conditions in free air [1][2] [1] [1] Table 7. Symbol Per device Rth(j-a) Min Typ Max Unit - - 416 416 328 K/W K/W K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 µA VCE = 5 V; IC = 2 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA VBE base-emitter voltage VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 10 mA Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz [1] Min - Typ - Max 15 5 Unit nA µA Per transistor 200 610 - 250 290 50 200 760 910 660 - 100 450 200 400 710 770 1.5 nA mV mV mV mV mV mV pF [1] [2] [2] Ce emitter capacitance - 11 - pF BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 4 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol fT Parameter transition frequency Conditions VCE = 5 V; IC = 10 mA; f = 100 MHz VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Per device hFE1/hFE2 hFE matching VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 2 mA [3] Min 100 Typ 250 Max - Unit MHz NF noise figure - 2.8 - dB - 3.3 - dB 0.9 - 1 - 2 mV VBE1−VBE2 VBE matching [4] [1] [2] [3] [4] VBEsat decreases by about 1.7 mV/K with increasing temperature. VBE decreases by about 2 mV/K with increasing temperature. The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value. BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 5 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 0.20 IC (A) 0.16 006aaa532 IB (mA) = 4.50 4.05 3.60 3.15 2.70 2.25 1.80 1.35 0.90 600 hFE 006aaa533 400 (1) 0.12 (2) 0.08 0.45 200 (3) 0.04 0 0 2 4 6 8 10 VCE (V) 0 10−2 10−1 1 10 102 103 IC (mA) Tamb = 25 °C VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values 1.3 VBEsat (V) 1.1 006aaa534 Fig 2. DC current gain as a function of collector current; typical values 10 VCEsat (V) 1 006aaa535 0.9 (1) (2) (3) 0.7 0.5 10−1 (1) 0.3 10−2 10−1 (2) (3) 0.1 10−1 1 10 102 IC (mA) 103 1 10 102 IC (mA) 103 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Base-emitter saturation voltage as a function of collector current; typical values Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 6 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 1 VBE (V) 0.8 006aaa536 103 006aaa537 fT (MHz) 102 0.6 0.4 10−1 1 10 102 IC (mA) 103 10 1 10 IC (mA) 102 VCE = 5 V; Tamb = 25 °C VCE = 5 V; Tamb = 25 °C Fig 5. Base-emitter voltage as a function of collector current; typical values 5 Cc (pF) 006aaa538 Fig 6. Transition frequency as a function of collector current; typical values 15 Ce (pF) 13 006aaa539 4 3 11 2 9 1 7 0 0 2 4 6 8 10 VCB (V) 5 0 2 4 VEB (V) 6 f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C Fig 7. Collector capacitance as a function of collector-base voltage; typical values Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 7 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 8. Application information V+ VCC R1 OUT1 IN1 l out TR1 TR2 OUT2 IN2 TR1 TR2 V− 006aaa523 006aaa525 Fig 9. Current mirror Fig 10. Differential amplifier 9. Package outline 2.2 1.8 6 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 2.2 1.35 2.0 1.15 pin 1 index 5 4 0.45 0.15 1.1 0.8 1.7 1.5 6 5 4 0.6 0.5 1 0.5 1 Dimensions in mm 2 3 0.27 0.17 0.18 0.08 04-11-08 Dimensions in mm 1 0.65 1.3 2 3 0.3 0.2 0.25 0.10 04-11-08 Fig 11. Package outline SOT666 3.1 2.7 6 5 Fig 12. Package outline SOT363 (SC-88) 1.1 0.9 4 0.6 0.2 3.0 2.5 1.7 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 13. Package outline SOT457 (SC-74) BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 8 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description BCM847BV BCM847BS BCM847DS SOT666 SOT363 SOT457 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] [2] [3] Packing quantity 3000 4000 8000 10000 -115 -125 -115 -125 -115 -315 -135 -165 -135 -165 For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 9 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 11. Soldering 2.75 2.45 2.10 1.60 0.15 (4×) 0.40 (6×) 2.00 1.70 1.00 0.55 (2×) 0.30 (2×) 0.375 (4×) 1.20 2.20 2.50 solder lands placement area occupied area 0.075 solder resist Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOT666 2.65 0.60 (2×) 2.35 solder lands solder paste solder resist occupied area Dimensions in mm 0.50 (4×) 0.50 (4×) 0.40 0.90 2.10 (2×) 1.20 2.40 sot363 Fig 15. Reflow soldering footprint SOT363 (SC-88) BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 10 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 5.25 4.50 0.30 1.00 4.00 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering sot363 Dimensions in mm Fig 16. Wave soldering footprint SOT363 (SC-88) 3.45 1.95 solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 17. Reflow soldering footprint SOT457 (SC-74) BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 11 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 12 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 12. Revision history Table 10. Revision history Release date 20060627 Data sheet status Product data sheet Change notice Supersedes BCM847BS_DS_4 Document ID BCM847BV_BS_DS_5 Modifications: BCM847BS_DS_4 BCM847BS_DS_3 BCM847BS_2 BCM847BS_1 • • Type number BCM847BV added Section 13 “Legal information”: updated Product data sheet Product data sheet Product data sheet Product data sheet BCM847BS_DS_3 BCM847BS_2 BCM847BS_1 - 20060216 20060123 20050406 20040914 BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 13 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BCM847BV_BS_DS_5 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 05 — 27 June 2006 14 of 15 Philips Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 27 June 2006 Document identifier: BCM847BV_BS_DS_5