BCY79

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY78; BCY79 PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP switching transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59. 3 BCY78; BCY79 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 IC Ptot hFE collector current (DC) total power dissipation DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X fT toff transition frequency turn-off time IC = −10 mA; VCE = −5 V Tamb ≤ 45 °C Tcase ≤ 45 °C IC = −2 mA; VCE = −5 V 120 180 250 380 100 ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA − 220 310 460 630 − 400 MHz ns open base − − − − − −32 −45 −100 340 1 V V mA mW W open emitter − − −32 −45 V V CONDITIONS MIN. MAX. UNIT 1997 Jun 18 2 Philips Semiconductors Product specification PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 45 °C Tcase ≤ 45 °C open collector − − − − − −65 − −65 open base − − PARAMETER collector-base voltage CONDITIONS open emitter − − BCY78; BCY79 MIN. MAX. −32 −45 −32 −45 −5 −100 −200 −200 340 1 +150 200 +150 V V V V V UNIT mA mA mA mW W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 450 150 UNIT K/W K/W 1997 Jun 18 3 Philips Semiconductors Product specification PNP switching transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO BCY78 ICBO collector cut-off current BCY79 IEBO hFE emitter cut-off current DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X hFE DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X hFE DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X hFE DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X VCEsat VBEsat VBE collector-emitter saturation voltage IC = −10 mA; IB = −250 µA IC = −100 mA; IB = −2.5 mA base-emitter saturation voltage base-emitter voltage IC = −10 mA; IB = −250 µA IC = −100 mA; IB = −2.5 mA IC = −10 µA; VCE = −5 V IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −1 V IC = −100 mA; VCE = −1 V Cc Ce fT collector capacitance emitter capacitance transition frequency IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −100 mA; VCE = −1 V 40 45 60 60 − − IC = −10 mA; VCE = −1 V 80 120 160 240 IC = −2 mA; VCE = −5 V 120 180 250 380 IE = 0; VCB = −45 V IE = 0; VCB = −45 V; Tamb = 150 °C IC = 0; VEB = −5 V IC = −10 µA; VCE = −5 V − 30 40 100 − − − PARAMETER collector cut-off current IE = 0; VCB = −32 V IE = 0; VCB = −32 V; Tamb = 150 °C − − CONDITIONS BCY78; BCY79 MIN. TYP. −2 − −2 − − 140 200 270 340 170 250 350 500 180 260 360 500 − − − − −120 −400 −700 −850 −550 −650 −650 −750 − − − MAX. −15 −10 −15 −10 −20 − − − − 220 310 460 630 − 400 630 1000 − − − − −250 −800 −850 − −750 − − 7 15 − UNIT nA µA nA µA nA mV mV mV mV mV mV mV pF pF MHz −600 −700 − −600 − − − − −1200 mV IC = −10 mA; VCE = −5 V; f = 100 MHz 100 1997 Jun 18 4 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 SYMBOL F PARAMETER noise figure CONDITIONS IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA; test conditions A MIN. − TYP. − MAX. 10 UNIT dB Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time turn-on time delay time rise time turn-off time storage time fall time ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA; test conditions B − − − − − − − − − − − − − − − − − − − − − − − − 100 50 50 700 600 100 100 35 65 400 300 100 ns ns ns ns ns ns ns ns ns ns ns ns ndbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MGD624 Test conditions A Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V Oscilloscope input impedance Zi = 50 Ω. Test conditions B Vi = −9.8 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 62 Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω. VBB = 3.4 V; VCC = −10.8 V Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Jun 18 5 Philips Semiconductors Product specification PNP switching transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BCY78; BCY79 SOT18/13 j B α seating plane wM AMBM 1 k D1 b 2 3 a A D A L 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.47 0.41 D 5.45 5.30 D1 4.70 4.55 j 1.03 0.94 k 1.1 0.9 L 15.0 12.7 w 0.40 α 45° OUTLINE VERSION SOT18/13 REFERENCES IEC B11/C7 type 3 JEDEC TO-18 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 1997 Jun 18 6 Philips Semiconductors Product specification PNP switching transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BCY78; BCY79 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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