BD132

DISCRETE SEMICONDUCTORS DATA SH EET book, halfpage M3D100 BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD131. handbook, halfpage BD132 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tmb ≤ 60 °C IC = −0.5 A; VCE = −12 V IC = −0.25 A; VCE = −5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 40 60 MIN. MAX. −45 −45 −6 15 − − MHz V V A W UNIT 1997 Mar 04 2 Philips Semiconductors Product specification PNP power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 60 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −45 −45 −4 −3 −6 −0.5 15 +150 150 +150 BD132 UNIT V V V A A A W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Refer to TO-126; SOT32 standard mounting conditions. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS note 1 VALUE 100 6 UNIT K/W K/W 1997 Mar 04 3 Philips Semiconductors Product specification PNP power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency CONDITIONS IE = 0; VCB = −40 V IE = 0; VCB = −40 V; Tj = 150 °C IC = 0; VEB = −3 V IC = −0.5 A; VCE = −12 V IC = −2 A; VCE = −1 V; see Fig.2 IC = −0.5 A; IB = −50 mA IC = −2 A; IB = −200 mA IC = −0.5 A; IB = −50 mA IC = −2 A; IB = −200 mA IC = −0.25 A; VCE = −5 V; f = 100 MHz; Tamb = 25 °C − − − 40 20 − − − − 60 MIN. BD132 MAX. −50 −10 −50 − − −300 −700 −1.2 −1.5 − UNIT nA µA nA mV mV V V MHz MGD841 handbook, full pagewidth 160 hFE 120 80 40 0 10−1 1 10 102 103 IC (mA) 104 VCE = −1 V. Fig.2 DC current gain; typical values. 1997 Mar 04 4 Philips Semiconductors Product specification PNP power transistor PACKAGE OUTLINE BD132 Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 wM 3 c Q e e1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.7 2.3 bp 0.88 0.65 c 0.60 0.45 D 11.1 10.5 E 7.8 7.2 e 4.58 e1 2.29 L 16.5 15.3 L1(1) max 2.54 Q 1.5 0.9 P 3.2 3.0 P1 3.9 3.6 w 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 REFERENCES IEC JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 1997 Mar 04 5 Philips Semiconductors Product specification PNP power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BD132 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Mar 04 6 Philips Semiconductors Product specification PNP power transistor NOTES BD132 1997 Mar 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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