BF1206F

BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s s s s s Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio Suited for 3 volt applications 1.3 Applications s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID |yfs| drain-source voltage (DC) drain current (DC) forward transfer admittance ID = 4 mA amplifier A amplifier B Ciss(G1) input capacitance at gate1 ID = 4 mA; f = 100 MHz amplifier A amplifier B NF noise figure ID = 4 mA amplifier A; f = 400 MHz amplifier B; f = 800 MHz Xmod cross modulation input level for k = 1 % at 40 dB AGC amplifier A amplifier B 92 93 97 98 dBµV dBµV 1.0 1.0 1.6 1.6 dB dB 2.4 1.7 2.9 2.2 pF pF 17 17 22 22 32 32 mS mS Conditions Min Typ Max Unit 6 30 V mA 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Discrete pinning Description gate1 (AMP A) source gate1 (AMP B) drain (AMP B) drain (AMP A) gate2 1 2 3 G1B 6 5 4 G1A AMP A G2 Simplified outline Symbol S AMP B DA DB sym111 3. Ordering information Table 3: Ordering information Package Name BF1206F Description plastic surface mounted package; 6 leads Version SOT666 Type number BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 2 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 4. Marking Table 4: BF1206F Marking Marking code 2N Type number 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS ID IG1 IG2 Ptot Tstg Tj [1] Parameter drain-source voltage (DC) drain current (DC) gate1 current gate2 current total power dissipation storage temperature junction temperature Conditions Min - Max 6 30 ±10 ±10 180 +150 150 Unit V mA mA mA mW °C °C Per MOSFET Tsp ≤ 107 °C [1] −65 - Tsp is the temperature at the solder point of the source lead. 250 Ptot (mW) 200 001aac193 150 100 50 0 0 50 100 150 Tsp (˚C) 200 Fig 1. Power derating curve 6. Thermal characteristics Table 6: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 240 Unit K/W BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 3 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 7. Static characteristics Table 7: Static characteristics Tj = 25 °C. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions VG1-S = VG2-S = 0 V; ID = 10 µA amplifier A amplifier B V(BR)G1-SS V(BR)G2-SS VF(S-G1) VF(S-G2) VG1-S(th) VG2-S(th) IDSX gate1-source breakdown voltage gate2-source breakdown voltage forward source-gate1 voltage forward source-gate2 voltage gate1-source threshold voltage gate2-source threshold voltage drain cut-off current VGS = VDS = 0 V; IG1-S = 10 mA VGS = VDS = 0 V; IG2-S = 10 mA VG2-S = VDS = 0 V; IS-G1 = 10 mA VG1-S = VDS = 0 V; IS-G2 = 10 mA VDS = 5 V; VG2-S = 4 V; ID = 100 µA VDS = 5 V; VG1-S = 5 V; ID = 100 µA VG2-S = 2.5 V; VDS = 2.8 V amplifier A; RG1 = 270 kΩ amplifier B; RG1 = 220 kΩ IG1-S gate1 cut-off current VG1-S = 5 V; VG2-S = VDS = 0 V amplifier A amplifier B IG2-S [1] [1] Min Typ Max Unit Per MOSFET; unless otherwise specified 6 6 6 6 0.5 0.5 0.3 10 10 1.5 1.5 1.0 1.0 6.5 6.5 50 50 20 V V V V V V V V mA mA nA nA nA 0.35 3 3 - gate2 cut-off current VG2-S = 5 V; VG1-S = VDS = 0 V; RG1 connects gate 1 to VGG = 2.8 V. 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol |yfs| Ciss(G1) Ciss(G2) Coss Crss Gtr Parameter forward transfer admittance input capacitance at gate1 input capacitance at gate2 output capacitance reverse transfer capacitance transducer power gain Conditions Tj = 25 °C f = 100 MHz f = 100 MHz f = 100 MHz f = 100 MHz BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS f = 400 MHz; GS = 2 mS; GL = 1 mS f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) BF1206F_1 Min 17 [1] [1] [1] [1] [1] Typ 22 2.4 3.2 1.1 15 31 28 23 3.5 1.0 1.1 Max 32 2.9 30 1.6 1.7 Unit mS pF pF pF fF dB dB dB dB dB dB - © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 4 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET Table 8: Dynamic characteristics for amplifier A …continued Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Xmod Parameter cross modulation Conditions input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 0 dB AGC at 10 dB AGC at 40 dB AGC [1] [2] Calculated from measured S-parameters. Measured in Figure 32 test circuit. [2] Min Typ Max Unit 88 92 85 97 - dBµV dBµV dBµV 8.1.1 Graphs for amplifier A 001aad896 (1) (2) (3) 15 ID (mA) 10 16 ID (mA) 12 001aad897 (1) (2) (3) 8 (4) 5 (4) (5) 4 (6) (7) 0 0 0.4 0.8 1.2 1.6 2.0 VG1−S (V) 0 0 1 2 3 VDS (V) 4 (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj = 25 °C. (1) VG1-S(A) = 1.4 V. (2) VG1-S(A) = 1.3 V. (3) VG1-S(A) = 1.2 V. (4) VG1-S(A) = 1.0 V. (5) VG1-S(A) = 0.9 V. (6) VG1-S(A) = 0.85 V. (7) VG1-S(A) = 0.8 V. VG2-S = 2.5 V; Tj = 25 °C. Fig 2. Amplifier A: transfer characteristics; typical values Fig 3. Amplifier A: output characteristics; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 5 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 100 IG1 (µA) 80 (1) 001aad898 40 Yfs (mS) 30 001aad899 (1) (2) 60 (2) 20 40 20 (3) 10 (4) (3) (4) 0 0 0.5 1.0 1.5 2.0 2.5 VG1−S (V) 0 0 4 8 12 ID (mA) 16 (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj = 25 °C. (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj = 25 °C. Fig 4. Amplifier A: gate1 current as a function of gate1 voltage; typical values 16 ID (mA) 12 001aad900 Fig 5. Amplifier A: forward transfer admittance as a function of drain current; typical values 001aad901 6 ID (mA) 4 8 2 4 0 0 10 20 IG1 (µA) 30 0 0 1 2 VGG (V) 3 VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C. VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 kΩ; see Figure 32. Fig 6. Amplifier A: drain current as a function of gate1 current; typical values Fig 7. Amplifier A: drain current as a function of gate1 supply voltage (=VGG); typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 6 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 10 ID (mA) 8 (1) (2) (3) 001aad902 6 ID (mA) (1) 001aad903 4 (2) 6 (4) (5) (6) (3) 4 (7) (8) (9) 2 (4) 2 (5) 0 0 1 2 3 4 VGG = VDS (V) 0 0 1 2 3 VG2−S (V) 4 (1) RG1 = 100 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 150 kΩ. (4) RG1 = 180 kΩ. (5) RG1 = 220 kΩ. (6) RG1 = 270 kΩ. (7) RG1 = 330 kΩ. (8) RG1 = 390 kΩ. (9) RG1 = 470 kΩ. VG2-S = 2.5 V; Tj = 25 °C; see Figure 32. (1) VGG = 1.0 V (2) VGG = 1.5 V (3) VGG = 2.0 V (4) VGG = 2.5 V (5) VGG = 3.0 V Tj = 25 °C; RG1(A) = 270 kΩ (connected to VGG); see Figure 32. Fig 8. Amplifier A: drain current as a function of VDS and VGG; typical values Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 7 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 0 gain reduction (dB) 10 001aad904 110 Vunw (dBµV) 100 001aad905 20 30 90 40 50 0 1 2 VAGC (V) 3 80 0 20 40 60 gain reduction (dB) VDS(A) = 2.8 V; VGG = 2.8 V; ID(nom) = 4 mA; Tamb = 25 °C. VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; fw = 50 MHz; funw = 60 MHz; ID(nom) = 4 mA; Tamb = 25 °C. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values Fig 11. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 001aad906 5 ID (mA) 4 3 2 1 0 0 20 40 60 gain reduction (dB) VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(A) = 270 kΩ; f = 50 MHz; Tamb = 25 °C. Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 8 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 102 bis, gis (mS) 10 bis 1 001aad907 102 001aad908 −102 Yfs (mS) Yfs ϕfs (deg) 10 ϕfs −10 10−1 gis 10−2 10 102 f (MHz) 103 1 10 102 f (MHz ) −1 103 VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. Fig 13. Amplifier A: input admittance and phase as a function of frequency; typical values 102 001aad909 Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values 10 bos, gos (mS) 1 bos 001aad910 ϕrs 102 Yrs (µS) Yrs 10 ϕrs (deg) 10 10−1 gos 1 10 102 f (MHz ) 1 103 10−2 10 102 f (MHz) 103 VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency: typical values Fig 16. Amplifier A: output admittance and phase as a function of frequency; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 9 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 Magnitude (ratio) 50 100 200 300 400 500 600 700 800 900 1000 0.9923 0.9930 0.9877 0.9802 0.9705 0.9596 0.9483 0.9361 0.9239 0.9129 0.9018 Angle (deg) −4.11 −8.29 −16.41 −24.48 −32.34 −39.91 −47.34 −54.59 −61.64 −68.28 −74.57 s21 Magnitude (ratio) 2.18 2.18 2.16 2.12 2.07 2.01 1.94 1.87 1.79 1.72 1.64 Angle (deg) 174.68 169.51 159.20 149.04 138.99 129.15 119.45 109.95 100.69 91.66 82.86 s12 Magnitude (ratio) 0.00038 0.00080 0.00161 0.00233 0.00303 0.00354 0.00394 0.00426 0.00453 0.00457 0.00456 Angle (deg) 102.27 85.65 80.93 76.76 73.21 69.83 67.19 65.26 63.89 64.06 65.60 s22 Magnitude (ratio) 0.995 0.996 0.995 0.994 0.992 0.989 0.987 0.984 0.981 0.979 0.976 Angle (deg) −1.83 −3.75 −7.49 −11.22 −14.96 −18.68 −22.39 −26.11 −29.82 −33.57 −37.31 8.2 Noise data for amplifier A Table 10: Noise data for amplifier A VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA. f (MHz) 400 800 NFmin (dB) 1.0 1.1 Γopt ratio 0.78 0.87 (deg) 26 53 0.84 0.87 rn (ratio) 8.3 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter |yfs| Ciss(G1) Ciss(G2) Coss Crss Gtr forward transfer admittance input capacitance at gate1 input capacitance at gate2 output capacitance transducer power gain Conditions Tj = 25 °C f = 100 MHz f = 100 MHz f = 100 MHz BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS f = 400 MHz; GS = 2 mS; GL = 1 mS f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) [1] [1] [1] [1] [1] Min - Typ 22 1.7 4.0 0.85 30 32 29 25 4.5 0.9 1.0 Max Unit 2.2 45 1.5 1.6 mS pF pF pF fF dB dB dB dB dB dB reverse transfer capacitance f = 100 MHz BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 10 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET Table 11: Dynamic characteristics for amplifier B …continued Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Xmod cross modulation Conditions input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 0 dB AGC at 10 dB AGC at 40 dB AGC [1] [2] Calculated from measured S-parameters. Measured in Figure 32 test circuit. [2] Min 89 93 Typ 85 98 Max Unit dBµV dBµV dBµV 8.3.1 Graphs for amplifier B 001aad911 (1) (2) (3) 15 ID (mA) 10 16 ID (mA) 12 001aad912 (1) (2) (3) 8 (4) 5 (4) (5) 4 (6) (7) 0 0 0.4 0.8 1.2 1.6 2.0 VG1−S (V) 0 0 1 2 3 VDS (V) 4 (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj = 25 °C. (1) VG1-S(B) = 1.3 V. (2) VG1-S(B) = 1.2 V. (3) VG1-S(B) = 1.1 V. (4) VG1-S(B) = 1.0 V. (5) VG1-S(B) = 0.9 V. (6) VG1-S(B) = 0.85 V. (7) VG1-S(B) = 0.8 V. VG2-S = 2.5 V; Tj = 25 °C. Fig 17. Amplifier B: transfer characteristics; typical values Fig 18. Amplifier B: output characteristics; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 11 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 100 IG1 (µA) 80 (1) 001aad913 40 Yfs (mS) 30 001aad914 (1) (2) 60 (2) 20 40 (3) 10 (4) (3) 20 (4) 0 0 0.5 1.0 1.5 2.0 2.5 VG1−S (V) 0 0 4 8 12 ID (mA) 16 (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj = 25 °C. (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj = 25 °C. Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values 16 ID (mA) 12 001aad915 Fig 20. Amplifier B: forward transfer admittance as a function of drain current; typical values 001aad916 6 ID (mA) 4 8 2 4 0 0 10 20 IG1 (µA) 30 0 0 1 2 VGG (V) 3 VDS(B) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C. VDS(B) = 2.8 V; VG2-S = 2.5 V; RG1(B) = 220 kΩ; see Figure 32. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values Fig 22. Amplifier B: drain voltage as a function of gate1 supply voltage (=VGG); typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 12 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 10 ID (mA) 8 (2) (1) 001aad917 6 ID (mA) (1) 001aad918 4 6 (3) (4) (5) (2) (3) 4 (6) (7) (8) 2 (4) 2 (5) 0 0 1 2 3 4 VGG = VDS (V) 0 0 1 2 3 VG2−S (V) 4 (1) RG1 = 120 kΩ. (2) RG1 = 150 kΩ. (3) RG1 = 180 kΩ. (4) RG1 = 220 kΩ. (5) RG1 = 270 kΩ. (6) RG1 = 330 kΩ. (7) RG1 = 390 kΩ. (8) RG1 = 470 kΩ. VG2-S = 2.5 V; RG1(B) connected to VGG; see Figure 32. (1) VGG = 3.0 V. (2) VGG = 2.5 V. (3) VGG = 2.0 V. (4) VGG = 1.5 V. (1) VGG = 1.0 V. RG1(B) = 220 kΩ; Tj = 25 °C; see Figure 32. Fig 23. Amplifier B: drain current as a function of VDS and VGG; typical values Fig 24. Amplifier B: drain current as a function of gate2 voltage; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 13 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 0 gain reduction (dB) 10 001aad919 110 Vunw (dBµV) 100 001aad920 20 30 90 40 50 0 1 2 VAGC (V) 3 80 0 20 40 60 gain reduction (dB) VDS(A) = 2.8 V; VG2(nom) = 2.5 V; ID(nom) = 4 mA; Tamb = 25 °C. VDS(B) = 2.8 V; VG2 = 2.5 V; ID(nom) = 4 mA; fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C. Fig 25. Amplifier B: typical gain reduction as a function of the AGC voltage; typical values Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 001aad921 5 ID (mA) 4 3 2 1 0 0 20 40 60 gain reduction (dB) VDS(B) = VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(B) = 220 kW; f = 50 MHz; Tamb = 25 °C. Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 14 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 102 bis, gis (mS) 10 001aad922 102 001aad923 −102 Yfs (mS) bis Yfs ϕfs (deg) 1 10 ϕfs −10 10−1 gis 10−2 10 102 f (Mhz) 103 1 10 102 f (MHz ) −1 103 VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. Fig 28. Amplifier B: input admittance and phase as a function of frequency; typical values 1 Yrs (µS) 10−1 ϕrs 001aad924 Fig 29. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 10 bos, gos (mS) 1 bos 001aad925 103 ϕrs (deg) 102 10−2 Yrs 10 10−1 gos 10−3 10X 102 f (MHz) 1 103 10−2 10 102 f (MHz) 103 VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. Fig 30. Amplifier B: reverse transfer admittance and phase as a function of frequency: typical values Fig 31. Amplifier B: output admittance and phase as a function of frequency; typical values BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 15 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 8.3.2 Scattering parameters for amplifier B Table 12: Scattering parameters for amplifier B VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 Magnitude (ratio) 50 100 200 300 400 500 600 700 800 900 1000 0.9939 0.9936 0.9896 0.9845 0.9779 0.9703 0.9620 0.9529 0.9439 0.9353 0.9266 Angle (deg) −3.12 −6.29 −12.47 −18.59 −24.66 −30.55 −36.37 −42.10 −47.79 −53.24 −58.46 s21 Magnitude (ratio) 2.27 2.26 2.25 2.23 2.20 2.16 2.13 2.08 2.04 1.99 1.94 Angle (deg) 176.11 172.41 164.98 157.64 150.35 143.16 136.02 129.01 122.01 115.30 108.64 s12 Magnitude (ratio) 0.00089 0.00170 0.00336 0.00503 0.00642 0.00769 0.00873 0.00967 0.01024 0.01058 0.01074 Angle (deg) 94.68 84.37 81.29 77.17 73.23 69.72 66.28 63.19 60.51 58.52 57.24 s22 Magnitude (ratio) 0.993 0.993 0.992 0.990 0.988 0.986 0.983 0.980 0.977 0.975 0.973 Angle (deg) −1.62 −3.23 −6.44 −9.65 −12.85 −16.00 −19.18 −22.37 −25.50 −28.66 −31.85 8.3.3 Noise data for amplifier B Table 13: Noise data for amplifier B VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA. f (MHz) 400 800 NFmin (dB) 0.9 1.0 Γopt ratio 0.8 0.83 (deg) 19 46 0.9 0.96 rn (ratio) 9. Test information VAGC R1 10 kΩ C1 4.7 nF C3 4.7 nF L1 ≈ 2.2 µH C4 RG1 4.7 nF RL 50 Ω C2 4.7 nF R2 50 Ω DUT RGEN 50 Ω VI VGG VDS 001aad926 Fig 32. Cross-modulation test setup (for one MOSFET) BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 16 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 10. Package outline Plastic surface mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 Fig 33. Package outline SOT666 BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 17 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 11. Revision history Table 14: Revision history Release date 20060130 Data sheet status product data sheet Change notice Doc. number BF1206F_1 Supersedes Document ID BF1206F_1 BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 18 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 19 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.2 8.3 8.3.1 8.3.2 8.3.3 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics for amplifier A. . . . . . . 4 Graphs for amplifier A . . . . . . . . . . . . . . . . . . . . 5 Scattering parameters for amplifier A . . . . . . . 10 Noise data for amplifier A . . . . . . . . . . . . . . . . 10 Dynamic characteristics for amplifier B. . . . . . 10 Graphs for amplifier B . . . . . . . . . . . . . . . . . . . 11 Scattering parameters for amplifier B . . . . . . . 16 Noise data for amplifier B . . . . . . . . . . . . . . . . 16 Test information . . . . . . . . . . . . . . . . . . . . . . . . 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information . . . . . . . . . . . . . . . . . . . . 19 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2006 BF1206F_1 Published in The Netherlands