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BF689K

BF689K

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    BF689K - NPN 2 GHz wideband transistor - NXP Semiconductors

  • 数据手册
  • 价格&库存
BF689K 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PINNING PIN 1 2 3 DESCRIPTION Code: F689 emitter base collector 1 2 3 BF689K MSB034 Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 °C IC = 2 mA; VCE = 5 V; Tj = 25 °C IC = 20 mA; VCE = 5 V; Tj = 25 °C IC = 15 mA; VCE = 5 V; f = 500 MHz open base CONDITIONS open emitter MIN. TYP. MAX. UNIT − − − − 20 35 − − − − − − − 1.8 25 15 25 360 − − − GHz V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature tp < 1 µs up to Tamb= 60 °C open base RBE ≤ 50 Ω open collector CONDITIONS open emitter MIN. − − − − − − − −55 − MAX. 25 15 25 3.5 25 50 360 150 150 UNIT V V V V mA mA mW °C °C September 1995 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air BF689K THERMAL RESISTANCE 250 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO VCE sat VBE sat hFE fT Cre Gp PARAMETER collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage DC current gain transition frequency feedback capacitance power gain CONDITIONS IE = 0; VCB = 15 V IC = 0; VEB = 2 V IC = 25 mA; IB = 1.25 mA IC = 25 mA; IB = 1.25 mA IC = 2 mA; VCE = 5 V IC = 20 mA; VCE = 5 V IC = 15 mA; VCE = 5 V; f = 500 MHz IC = 2 mA; VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC = 2 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; ZS = 60 Ω; RL = 2 kΩ MIN. TYP. MAX. UNIT − − − − 20 35 − − − − − − − − − 1.8 1.1 16 16 4 3 50 1 1.0 1.0 − − − − − − − − GHz pF dB dB dB dB nA µA V V IC = 2 mA; VCE = 5 V; f = 200 MHz; − Tamb = 25 °C; ZS = 60 Ω; RL = 920 Ω F noise figure IC = 2 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; ZS = 60 Ω IC = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; ZS = 60 Ω − − September 1995 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) BF689K SOT54 variant c L2 E d A L b 1 2 D e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5 September 1995 4 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF689K This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 5
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