BF858

DISCRETE SEMICONDUCTORS DATA SH EET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors DESCRIPTION NPN transistors in a TO-202 plastic package. An A-version with e-b-c pinning instead of e-c-b is available on request. APPLICATIONS • For use in video output stages of black and white and colour television receivers. PINNING PIN 1 2 3 emitter collector, connected to mounting base base Fig.1 DESCRIPTION 1 2 handbook, halfpage BF857; BF858; BF859 3 MBH794 Simplified outline (TO-202) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF857 BF858 BF859 VCEO collector-emitter voltage BF857 BF858 BF859 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 75 °C IC = 30 mA; VCE = 10 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz open base − − − − − 26 − 90 160 250 300 300 6 − 3 − pF MHz V V V mA W open emitter − − − 160 250 300 V V V CONDITIONS MIN. MAX. UNIT 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF857 BF858 BF859 VCEO collector-emitter voltage BF857 BF858 BF859 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 75 °C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BF857; BF858; BF859 MIN. − − − − − − − − − − − − −65 − −65 MAX. 160 250 300 160 250 300 5 100 300 100 2 6 +150 150 +150 UNIT V V V V V V V mA mA mA W W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base VALUE 62.5 12.5 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICBO ICBO IEBO hFE VCEsat Cre fT BF857 collector cut-off current BF858 collector cut-off current BF859 emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency IC = 0; VEB = 5 V IC = 30 mA; VCE = 10 V IC = 30 mA; IB = 6 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz IE = 0; VCB = 250 V − − 26 − − 90 0.1 100 − 1 3 − V pF MHz µA nA IE = 0; VCB = 200 V − 0.1 µA PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = 100 V − 0.1 µA MIN. MAX. UNIT 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE BF857; BF858; BF859 handbook, full pagewidth 10.4 max 3.8 3.6 3.8 0.56 max 24.2 max 8.6 max 2.5 max (1) 2.4 max 12.2 min 1 2 3 0.8 (3x) 0.6 2.54 2.54 0.65 max 1.6 4.6 max 10 MGA322 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-202. 1996 Dec 09 4 Philips Semiconductors Product specification NPN high-voltage transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BF857; BF858; BF859 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Dec 09 5 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF857; BF858; BF859 1996 Dec 09 6 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF857; BF858; BF859 1996 Dec 09 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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