BFG25A

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.5 − − − MIN. − − − − 80 5 18 1.8 2 TYP. MAX. 8 5 6.5 32 200 − − − − GHz dB dB dB UNIT V V mA mW 1997 Oct 29 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Cre fT GUM F PARAMETER collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = 5 V IC = 0.5 mA; VCE = 1 V IC = ic = 0; VCB = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 500 MHz IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C Note MIN. − 50 − 3.5 − − − TYP. − 80 0.21 5 18 1.8 2 PARAMETER CONDITIONS VALUE 320 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 165 °C; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. 8 5 2 BFG25A/X MAX. V V V UNIT 6.5 32 150 175 mA mW °C °C UNIT K/W thermal resistance from junction to soldering point note 1 MAX. 50 200 0.3 − − − − UNIT µA pF GHz dB dB dB S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2  2  1 – S 11   1 – S 22   2 1997 Oct 29 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X MRC038 - 1 handbook,40 halfpage handbook, halfpage 100 MCD138 P tot (mW) 30 h FE 80 60 20 40 10 20 0 0 50 100 150 Ts (oC) 200 0 10 3 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. 0.3 handbook, halfpage C re (pF) 0.2 MCD139 handbook, halfpage 6 MCD140 fT (GHz) 4 0.1 2 0 0 2 4 VCB (V) 6 0 0 1 2 3 I C (mA) 4 IC = ic = 0; f = 1 MHz. VCE = 1 V; f = 500 MHz; Tamb = 25 °C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. 1997 Oct 29 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X handbook, halfpage 30 MCD141 handbook,20 halfpage MCD142 gain (dB) G UM gain (dB) 15 G UM 20 MSG MSG 10 10 5 0 0 0.5 1.0 1.5 2.0 2.5 I C (mA) 0 0 0.5 1.0 1.5 2.0 2.5 I C (mA) VCE = 1 V; f = 500 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. VCE = 1 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook,50 halfpage MCD143 gain (dB) 40 G UM handbook,50 halfpage MCD144 gain (dB) 40 G UM 30 30 20 MSG 10 20 MSG 10 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 IC = 0.5 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. IC = 1 mA; VCE = 1 V. GUM = maximum unilateral power gain; MSG = maximum stable gain. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 1997 Oct 29 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X handbook, halfpage 4 MCD145 handbook, halfpage 4 MCD146 F (dB) 3 f = 2 GHz 1 GHz 500 MHz 2 F (dB) 3 IC = 2 mA 1 mA 2 0.5 mA 1 1 0 10−1 1 IC (mA) 10 0 102 103 f (MHz) 104 VCE = 1 V. VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 6 dB 0.2 unstable regio n 4 dB 2.5 dB 5 10 10 * stability circle + j –j 0 0.2 0.5 MSG 15.6 dB 1 2 5 ∞ 10 5 OPT F = 1.9 dB min 0.2 14 dB 12 dB 0.5 1 2 MCD147 IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4. Fig.12 Common emitter noise figure circles; typical values. 1997 Oct 29 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 6 dB 2 stability circle OPT F min = 2 dB 10 10 0.2 a unst ble r egio n 4 dB 3 dB 5 + j –j * 0 0.2 0.5 MSG 12.4 dB 1 2 5 ∞ 10 5 11 dB 0.2 9 dB 0.5 1 2 MCD148 IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth stability circle 2 OPT F = 2.4 dB min 0.5 sta bl eg er ion 6 dB 4 dB 3 dB un 0.2 * 5 10 +j 0 –j 7.5 dB 0.2 6 dB 5 10 0.2 MSG 0.5 9 dB 1 2 5 10 ∞ 0.5 1 2 MCD149 IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9. Fig.14 Common emitter noise figure circles; typical values. 1997 Oct 29 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz ∞ 10 0.5 1 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. 2 MCD150 Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 40 MHz 1 2 3 4 5 0o _ 135 o _ 45 o IC = 1 mA; VCE = 1 V. _ 90 o MCD151 Fig.16 Common emitter forward transmission coefficient (S21); typical values. 1997 Oct 29 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o _ 135 o _ 45 o IC = 1 mA; VCE = 1 V. _ 90 o MCD153 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 10 0.2 5 0.2 0.5 1 2 5 10 40 MHz ∞ 3 GHz 0.5 1 IC = 1 mA; VCE = 1 V; Zo = 50 Ω. 2 MCD152 Fig.18 Common emitter output reflection coefficient (S22); typical values. 1997 Oct 29 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 4 leads BFG25A/X SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Oct 29 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFG25A/X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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