BFG325W

BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features s s s s High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVision (SATV) tuners 1.4 Quick reference data Table 1: VCBO VCEO IC Ptot hFE CCBS fT Gmax Quick reference data Conditions open emitter open base Tsp ≤ 90 °C IC = 15 mA; VCE = 3 V; Tj = 25 °C VCB = 5 V; f = 1 MHz; emitter grounded IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C [1] Symbol Parameter collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain collector-base capacitance transition frequency maximum power gain [2] Min 60 - Typ 100 0.27 14 18.3 Max 15 6 35 210 200 0.4 - Unit V V mA mW pF GHz dB Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor Quick reference data …continued Conditions IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω Γs = Γopt; IC = 3 mA; VCE = 3 V; f = 2 GHz Min Typ 14 Max Unit dB insertion power gain Table 1: |s21|2 Symbol Parameter NF noise figure - 1.1 - dB [1] [2] Tsp is the temperature at the soldering point of the collector pin. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4. 2. Pinning information Table 2: Pin 1 2 3 4 Pinning Description collector emitter base emitter 2, 4 2 1 sym086 Simplified outline 3 4 Symbol 1 3 3. Ordering information Table 3: Ordering information Package Name BFG325W/XR Description plastic surface mounted package; reverse pinning; 4 leads Version SOT343R Type number 4. Marking Table 4: Marking codes Marking code [1] A8* Type number BFG325W/XR [1] * = p: made in Hong Kong. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO 9397 750 14246 Parameter collector-base voltage collector-emitter voltage emitter-base voltage Conditions open emitter open base open collector Min - Max 15 6 2 Unit V V V © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 2 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IC Ptot Tstg Tj [1] Parameter collector current (DC) total power dissipation storage temperature junction temperature Conditions Tsp ≤ 90 °C [1] Min −65 - Max 35 210 +175 175 Unit mA mW °C °C Tsp is the temperature at the soldering point of the collector pin. 6. Thermal characteristics Table 6: Rth(j-sp) [1] Thermal characteristics Conditions Tsp ≤ 90 °C [1] Symbol Parameter thermal resistance from junction to solder point Typ 403 Unit K/W Tsp is the temperature at the soldering point of the collector pin. 7. Characteristics Table 7: Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter ICBO hFE CCBS CCES CEBS fT Gmax |s21|2 collector-base cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance transition frequency maximum power gain [1] insertion power gain Conditions IE = 0 A; VCB = 5 V IC = 15 mA; VCE = 3 V VCB = 5 V; f = 1 MHz; emitter grounded VCE = 5 V; f = 1 MHz; base grounded VEB = 0.5 V; f = 1 MHz; collector grounded IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C IC = 15 mA; VCE = 3 V; Tamb = 25 °C; ZS = ZL = 50 Ω f = 1.8 GHz f = 3 GHz NF PL(1dB) IP3 noise figure output power at 1 dB gain compression third order intercept point Γs = Γopt; IC = 3 mA; VCE = 3 V; f = 2 GHz IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω 14 10 1.1 8.7 19.4 dB dB dB dBm dBm Min 60 Typ 100 0.27 0.22 0.49 14 18.3 Max 15 200 0.4 pF pF pF GHz dB Unit nA [1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4. K is the Rollet stability factor: K = ---------------------------------------------------------- where Ds = s 11 × s 22 – s 12 × s 21 . 2× s × s 21 12 1 + Ds – s 11 – s 22 2 2 2 MSG = maximum stable gain. 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 3 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 250 Ptot (mW) 200 001aac158 35 IC (mA) 30 25 001aac159 IB = 350 µA 300 µA 250 µA 150 20 15 10 200 µA 150 µA 100 µA 50 µA 100 50 5 0 0 50 100 150 Tsp (°C) 200 0 0 1 2 3 4 5 VCE (V) 6 Fig 1. Power derating curve Fig 2. Collector current as a function of collector-emitter voltage; typical values 001aac160 0.34 CCBS (pF) 0.30 40 G (dB) MSG 30 s21 2 001aac161 20 Gmax 0.26 10 0.22 0 1 2 3 4 VCB (V) 5 0 10 102 103 f (MHz) 104 IC = 0 mA; f = 1 MHz. IC = 15 mA; VCE = 3 V. Fig 3. Collector-base capacitance as a function of collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 4 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 0.4 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 3 GHz +5 40 MHz − 0.2 −5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 001aac162 VCE = 3 V; IC = 15 mA; Zo = 50 Ω. Fig 5. Common emitter input reflection coefficient (s11); typical values 90° 135° 45° 40 MHz 180° 50 40 30 20 10 0 3 GHz 0° − 135° − 45° − 90° 001aac163 VCE = 3 V; IC = 15 mA. Fig 6. Common emitter forward transmission coefficient (s21); typical values 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 5 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 90° 135° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 0 0° 180° 40 MHz − 135° − 45° − 90° 001aac164 VCE = 3 V; IC = 15 mA. Fig 7. Common emitter reverse transmission coefficient (s12); typical values 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 0.4 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 +5 40 MHz 3 GHz − 0.2 −5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 001aac165 VCE = 3 V; IC = 15 mA; Zo = 50 Ω. Fig 8. Common emitter output reflection coefficient (s22); typical values 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 6 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 8. Application information Table 8: Sequence 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 SPICE parameters of the BFG325 DIE Parameter IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB RE RC CJE VJE MJE CJC VJC MJC XCJC FC TF XTF VTF ITF PTF TR KF AF TNOM EG XTB XTI Q1.AREA Value 26.6 200 1 40 105 2.3 2.114 10 1 2.5 10 0 1.5 3.6 1.5 2.6 185.6 890 0.294 77.06 601 0.159 1 0.7 8.1 10 1000 150 0 0 0 1 25 1.014 0 8 2.5 Unit aA V mA fA V A aA Ω Ω Ω fF mV fF mV ps V mA deg ns °C eV - 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 7 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor LC_lead LC_wire CCB C_base_pad LB_lead LB_wire BJT1 C_emitter_pad CCE CBE CHIP LE_wire LE_lead 001aac166 Fig 9. Package equivalent circuit of SOT343R Table 9: CCB CBE CCE C_base_pad C_emitter_pad LC_wire LB_wire LE_wire LC_lead LB_lead LE_lead List of components; see Figure 9 Value 2 80 80 67 142 0.767 0.842 0.212 0.28 0.281 0.1 Unit fF fF fF fF fF nH nH nH nH nH nH Designation 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 8 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 9. Package outline Plastic surface mounted package; reverse pinning; 4 leads SOT343R D B E A X y HE e vMA 3 4 Q A A1 c 2 wM B bp e1 b1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT343R REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-21 Fig 10. Package outline SOT343R 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 9 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 10. Revision history Table 10: Revision history Release date 20050202 Data sheet status Product data sheet Change notice Doc. number 9397 750 14246 Supersedes Document ID BFG325W_XR_1 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 10 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14246 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 11 of 12 Philips Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 February 2005 Document number: 9397 750 14246 Published in The Netherlands