BFG540W

DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 03 2000 May 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4 DESCRIPTION collector base emitter emitter BFG540; BFG540/X; BFG540/XR handbook, 2 columns 4 3 BFG540 (Fig.1) Code: N37 1 Top view 2 MSB014 BFG540/X (Fig.1) Code: N43 collector emitter base emitter collector emitter base emitter Fig.1 SOT143B. handbook, 2 columns 3 4 BFG540/XR (Fig.2) Code: N49 2 Top view 1 MSB035 Fig.2 SOT143R. 2000 May 23 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 60 °C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 °C IC = 0; VCE = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C s 21 F 2 BFG540; BFG540/X; BFG540/XR CONDITIONS open emitter RBE = 0 MIN. − − − − 100 − − − − 15 − − − TYP. − − − − 120 0.5 9 18 11 16 1.3 1.9 2.1 MAX. 20 15 120 400 250 − − − − − 1.8 2.4 − UNIT V V mA mW pF GHz dB dB dB dB dB dB insertion power gain noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 60 °C; note 1 VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature Ts ≤ 60 °C; note 1 open emitter RBE = 0 open collector CONDITIONS MIN. − − − − − −65 − MAX. 20 15 2.5 120 400 +150 150 UNIT V V V mA mW °C °C 2000 May 23 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 8 V IC = 40 mA; VCE = 8 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C s 21 F 2 BFG540; BFG540/X; BFG540/XR MIN. − 60 − − − − − − 15 − − − − − − − TYP. − 120 2 0.9 0.5 9 18 11 16 1.3 1.9 2.1 21 34 500 −50 MAX. 50 250 − − − − − − − 1.8 2.4 − − − − − UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm mV dB insertion power gain noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C PL1 ITO VO d2 Notes output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C note 2 note 3 note 4 s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------- dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. VCE = 8 V; IC = 40 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C; Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. 2000 May 23 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR handbook, halfpage 600 MBG249 handbook, halfpage 250 MRA749 Ptot (mW) 400 hFE 200 150 100 200 50 0 0 50 100 150 Ts ( o C) 200 0 10−2 10−1 1 10 IC (mA) 102 VCE = 8 V; Tj = 25 °C. VCE ≤ 10 V. Fig.4 Fig.3 Power derating curve. DC current gain as a function of collector current. handbook, halfpage 1 MRA750 Cre (pF) handbook, halfpage 12 MRA751 0.8 fT (GHz) 8 VCE = 8 V 0.6 VCE = 4 V 0.4 4 0.2 0 0 4 8 VCB (V) 12 0 10−1 1 10 IC (mA) 102 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.5 Feedback capacitance as a function of collector-base voltage. Fig.6 Transition frequency as a function of collector current. 2000 May 23 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR handbook, halfpage 25 MRA752 handbook, halfpage 25 MRA753 gain (dB) 20 MSG Gmax GUM gain (dB) 20 15 15 Gmax 10 10 GUM 5 5 0 0 20 40 IC (mA) 60 0 0 20 40 IC (mA) 60 VCE = 8 V; f = 900 MHz. MSG = maximum stable gain; Gmax = maximum available gain; GUM = maximum unilateral power gain. VCE = 8 V; f = 2 GHz. Gmax = maximum available gain; GUM = maximum unilateral power gain. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of collector current. MRA754 MRA755 handbook, halfpage 50 handbook, halfpage 50 gain (dB) 40 GUM gain (dB) 40 GUM MSG MSG 30 30 20 Gmax 20 Gmax 10 10 0 10 102 103 f (MHz) 104 0 10 102 103 f (MHz) 104 IC = 10 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. IC = 40 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.9 Gain as a function of frequency. Fig.10 Gain as a function of frequency. 2000 May 23 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR handbook, halfpage −20 dim MEA973 handbook, halfpage −20 d2 MEA972 (dB) −30 (dB) −30 −40 −40 −50 −50 −60 −60 −70 10 20 30 40 50 60 IC (mA) −70 10 20 30 40 50 60 IC (mA) Fig.11 Intermodulation distortion as a function of collector current. Fig.12 Second order intermodulation distortion as a function of collector current. handbook, halfpage 5 MRA760 Fmin (dB) 4 Gass f = 900 MHz 1000 MHz 2000 MHz 20 Gass (dB) 15 handbook, halfpage 5 MRA761 Fmin (dB) 4 IC = 10 mA 40 mA Gass 20 Gass (dB) 15 3 2000 MHz 2 1000 MHz 900 MHz 500 MHz 10 3 10 5 Fmin 0 2 40 mA 1 10 mA Fmin 5 1 0 0 1 10 IC (mA) −5 102 0 102 103 f (MHz) −5 104 VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure and associated available gain as functions of collector current. Fig.14 Minimum noise figure and associated available gain as functions of frequency. 2000 May 23 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 2 5 0° 0 0.2 Fmin = 1.3 dB OPT 1 5 180° 0 0.2 0.5 F = 1.5 dB 0.2 F = 2 dB 5 F = 3 dB −135° 0.5 1 MRA762 2 −45° 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz. Fig.15 Noise circle figure. handbook, full pagewidth 90° 1.0 1 135° 0.5 G = 8 dB G = 9 dB Gmax = 11.4 dB G = 10 dB MS 0.2 180° 0 0.2 0.5 OPT Fmin = 2.1 dB 0.2 F = 2.5 dB F = 3 dB F = 4 dB −135° 0.5 1 MRA763 2 45° 0.8 0.6 0.4 5 1 2 5 0° 0 5 2 −45° 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz. Fig.16 Noise circle figure. 2000 May 23 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR handbook, full pagewidth 90° 1.0 1 135° 0.5 3 GHz 2 45° 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 0° 0 0.2 5 0.2 40 MHz 5 −135° 0.5 1 2 −45° MRA756 1.0 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.17 Common emitter input reflection coefficient (s11). handbook, full pagewidth 90° 135° 45° 40 MHz 180° 3 GHz 50 40 30 20 10 0° −135° −45° −90° IC = 40 mA; VCE = 8 V. MRA757 Fig.18 Common emitter forward transmission coefficient (s21). 2000 May 23 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR handbook, full pagewidth 90° 135° 3 GHz 45° 180° 0.25 40 MHz 0.20 0.15 0.10 0.05 0° −135° −45° −90° IC = 40 mA; VCE = 8 V. MRA758 Fig.19 Common emitter reverse transmission coefficient (s12). handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 3 GHz 40 MHz 1 2 5 0° 0 0.2 5 0.2 5 −135° 0.5 1 2 −45° MRA759 1.0 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.20 Common emitter output reflection coefficient (s22). 2000 May 23 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads BFG540; BFG540/X; BFG540/XR SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 May 23 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR Plastic surface mounted package; reverse pinning; 4 leads SOT143R D B E A X y vMA HE e bp wM B 3 4 Q A A1 c 2 b1 e1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143R REFERENCES IEC JEDEC EIAJ SC-61B EUROPEAN PROJECTION ISSUE DATE 97-03-10 99-09-13 2000 May 23 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistor DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development BFG540; BFG540/X; BFG540/XR DEFINITIONS (1) This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2000 May 23 13 Philips Semiconductors Product specification NPN 9 GHz wideband transistor NOTES BFG540; BFG540/X; BFG540/XR 2000 May 23 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor NOTES BFG540; BFG540/X; BFG540/XR 2000 May 23 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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