BGD902

BGD902 860 MHz, 18.5 dB gain power doubler amplifier Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. 1.2 Features s s s s s s Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 1.3 Applications s CATV systems operating in the 40 MHz to 900 MHz frequency range. 1.4 Quick reference data Table 1: Symbol Gp Itot [1] Quick reference data Parameter power gain total current consumption (DC) Conditions f = 50 MHz f = 900 MHz [1] Min 18.2 19 405 Typ 18.5 19.5 420 Max 18.8 20 435 Unit dB dB mA The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 2. Pinning information Table 2: Pin 1 2, 3 5 7, 8 9 Pinning Description input common +VB common output 2378 Side view msa319 sym095 Simplified outline Symbol 5 9 1 2 3 5 7 8 1 9 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 3. Ordering information Table 3: Ordering information Package Name BGD902 Description rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads Version SOT115J Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VB Vi Tstg Tmb Parameter supply voltage RF input voltage storage temperature mounting base temperature Conditions Min −40 −20 Max 30 70 +100 +100 Unit V dBmV °C °C 5. Characteristics Table 5: Characteristics Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol Gp SL FL Parameter power gain slope cable equivalent flatness of frequency response input return losses Conditions f = 50 MHz f = 900 MHz f = 40 MHz to 900 MHz f = 40 MHz to 900 MHz Min 18.2 19 0.4 Typ 18.5 19.5 0.9 ±0.15 Max 18.8 20 1.4 ±0.3 Unit dB dB dB dB s11 f = 40 MHz to 80 MHz f = 80 MHz to 160 MHz f = 160 MHz to 320 MHz f = 320 MHz to 640 MHz f = 640 MHz to 900 MHz 21 22 22 19 18 25 25 21 20 19 −45 24 26 28 22 21 32 33 29 25 22 - +45 dB dB dB dB dB dB dB dB dB dB deg s22 output return losses f = 40 MHz to 80 MHz f = 80 MHz to 160 MHz f = 160 MHz to 320 MHz f = 320 MHz to 750 MHz f = 750 MHz to 900 MHz s21 phase response f = 50 MHz 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 2 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier Table 5: Characteristics …continued Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol CTB Parameter composite triple beat Conditions 49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz 77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz 129 chs; fm = 650 MHz; Vo = 49.5 dBmV at 860 MHz Xmod cross modulation 49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz 77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz 129 chs; fm = 860 MHz; Vo = 49.5 dBmV at 860 MHz CSO composite second order distortion 49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz 77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz 110 chs; fm = 250 MHz; Vo = 49 dBmV at 550 MHz 129 chs; fm = 250 MHz; Vo = 49.5 dBmV at 860 MHz IMD2 second order distortion [1] [1] [1] Min 64.5 65.5 67.5 48.5 50 [9] Typ −68.5 −70 −63.5 −60 −64 −58.5 −66.5 −69.5 −66 −64.5 −63 −61 −65 −72 −65 −61 −67 −62 −80 −83 −84 66 67 69 49.5 53 4.5 5 5.5 6.5 420 Max −67 −68 −62 −58 −62 −56.5 −64 −67 −63.5 −62 −60 −58 −62 −67 −60 −58 −63 −58 −74 −77 −78 5 5.5 6.5 8 435 Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dBmV dBmV dBmV dBmV dB dB dB dB mA [2] [2] [2] [3] [4] [5] Vo output voltage IMD = −60 dB [6] [7] [8] CTB compression = 1 dB; 129 chs flat; f = 859.25 MHz CSO compression = 1 dB; 129 chs flat; f = 860.5 MHz F noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 900 MHz Itot total current consumption (DC) Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). Tilt = 12.5 dB (50 MHz to 860 MHz). 405 [1] [2] 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 3 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier [3] [4] [5] [6] [7] [8] [9] fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. −50 CTB (dB) −60 (1) (2) (3) (4) (2) (3) (4) (1) mda980 52 Vo (dBmV) 48 −50 Xmod (dB) −60 mda981 52 Vo (dBmV) (1) (2) (3) (4) (1) 48 −70 44 −70 44 −80 40 −80 40 −90 0 200 400 600 36 1000 800 f (MHz) −90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig 1. Composite triple beat as a function of frequency under tilted conditions Fig 2. Cross modulation as a function of frequency under tilted conditions 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 4 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier −50 CSO (dB) −60 mda982 52 Vo (dBmV) −50 CTB (dB) −60 mda942 52 Vo (dBmV) 48 (1) (2) (1) (2) (3) (4) (3) (1) (2) (3) (4) 48 −70 44 −70 44 (4) −80 40 −80 40 −90 0 200 400 600 36 800 1000 f (MHz) −90 0 200 400 600 36 800 1000 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig 3. Composite second order distortion as a function of frequency under tilted conditions Fig 4. Composite triple beat as a function of frequency under tilted conditions 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 5 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier −50 Xmod (dB) −60 mda943 52 Vo (dBmV) 48 −50 CSO (dB) −60 mda944 52 Vo (dBmV) 48 (1) (2) (3) (4) (1) (2) −70 44 −70 (3) (4) 44 −80 40 −80 40 −90 0 200 400 600 36 800 1000 f (MHz) −90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig 5. Cross modulation as a function of frequency under tilted conditions −20 CTB (dB) −30 mda945 Fig 6. Composite second order distortion as a function of frequency under tilted conditions −20 CSO (dB) −30 mda946 −40 −40 −50 −50 −60 (1) (2) (3) −60 (1) (2) (3) −70 40 45 50 Vo (dBmV) 55 −70 40 45 50 Vo (dBmV) 55 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. Fig 7. Composite triple beat as a function of output voltage Fig 8. Composite second order distortion as a function of output voltage 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 6 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yM B xM B b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. p Q max. q q1 q2 S U1 U2 W w x y 0.1 Z max. 3.8 mm 20.8 4.15 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 3.85 0.38 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-02-06 04-02-04 Fig 9. Package outline SOT115J 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 7 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 7. Revision history Table 6: BGD902_7 Modifications: Revision history Release date 20050308 Data sheet status Product data sheet Change notice Doc. number 9397 750 14435 Supersedes BGD902_902MI_6 Document ID • • The format of this data sheet has been redesigned to comply with the new representation and information standard of Philips Semiconductors. Module BGD902MI withdrawn Product specification Product specification 9397 750 08853 9397 750 05481 9397 750 04076 9397 750 03949 9397 750 03454 BGD902_902MI_5 BGD902_N_3 and BGD902MI_N_1 BGD902_N_2 BGD902_1 - BGD902_902MI_6 BGD902_902MI_5 BGD902_N_3 BGD902_N_2 BGD902_1 BGD902MI_N_1 20011102 19990329 19980709 19980609 19980312 19980831 Preliminary specification Preliminary specification Preliminary specification Preliminary specification - 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 8 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 8. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 10. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14435 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 07 — 8 March 2005 9 of 10 Philips Semiconductors BGD902 860 MHz, 18.5 dB gain power doubler amplifier 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 1 2 2 2 7 8 9 9 9 9 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 8 March 2005 Document number: 9397 750 14435 Published in The Netherlands