BGM1012

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 2002 Sep 06 Philips Semiconductors Product specification MMIC wideband amplifier FEATURES • Internally matched to 50 Ω • Very wide frequency range (4 Ghz at 3 dB bandwidth) • Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness) • 10 dBm saturated output power at 1 GHz • High linearity (18 dBm IP3(out) at 1 GHz) • Low current (14.6 mA) • Unconditionally stable. APPLICATIONS • LNB IF amplifiers • Cable systems • ISM • General purpose. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 3 14.6 20.1 4.8 9.7 TYP. 1 Top view Marking code: C2-. 6 BGM1012 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 3 2 3 MAM455 4 2, 5 Fig.1 Simplified outline (SOT363) and symbol. MAX. 4 − − − − UNIT V mA dB dB dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Sep 06 2 Philips Semiconductors Product specification MMIC wideband amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 90 °C CONDITIONS RF input AC coupled − − − −65 − − MIN. BGM1012 MAX. 4 50 200 +150 150 10 UNIT V mA mW °C °C dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts ≤ 90 °C VALUE 300 UNIT K/W 2002 Sep 06 3 Philips Semiconductors Product specification MMIC wideband amplifier CHARACTERISTICS VS = 3 V; IS = 14.6 mA; Tj = 25 °C; unless otherwise specified. SYMBOL IS s212 PARAMETER supply current insertion power gain f = 100 MHz f = 1 GHz f = 1.8 GHz f = 2.2 GHz f = 2.6 GHz f = 3 GHz RL IN RL OUT s122 NF BW K PL(sat) PL 1 dB IP3(in) IP3(out) return losses input return losses output isolation noise figure bandwidth stability factor saturated load power load power input intercept point output intercept point f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz at s212 f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz at 1 dB gain compression; f = 1 GHz at 1 dB gain compression; f = 2.2 GHz f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz CONDITIONS MIN. 11 19 19 19 19 18 16 9 13 11 10 30 35 − − 1.5 3 8 3.5 4 1.5 −4 −9 16 11 TYP. 14.6 19.5 20.1 20.4 20.4 19.9 18.7 11 15 14 13 33 38 4.8 4.9 3.6 2.1 3.4 9.7 5.6 6.0 3.4 −2 −7 18 13 BGM1012 MAX. 19 20 21 21 22 21 20 − − − − − − 5.1 5.3 − − − − − − − − − − − UNIT mA dB dB dB dB dB dB dB dB dB dB dB dB dB dB GHz − − dBm dBm dBm dBm dBm dBm dBm dBm −3 dB below flat gain at 1 GHz 3.1 2002 Sep 06 4 Philips Semiconductors Product specification MMIC wideband amplifier APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGM1012 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value (e.g. 10 nH) can be used to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. handbook, halfpage BGM1012 In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. DC-block handbook, halfpage 100 pF input DC-block 100 pF DC-block 100 pF output MGU437 Fig.3 Easy cascading application circuit. mixer to IF circuit or demodulator wideband amplifier oscillator Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. from RF circuit MGU438 Fig.4 Application as IF amplifier. V halfpage handbook, s C1 Vs RF input C2 GND1 GND2 RF in RF out C3 MGU436 L1 RF output handbook, halfpage mixer to IF circuit or demodulator LNA wideband amplifier oscillator MGU439 antenna Fig.2 Typical application circuit. Fig.5 Application as RF amplifier. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. The excellent wideband characteristics of the MMIC make it an ideal building block in IF amplifier applications such as LBNs (see Fig.4). As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). 2002 Sep 06 5 handbook, halfpage mixer to power amplifier wideband amplifier oscillator from modulation or IF circuit MGU440 Fig.6 Application as driver amplifier. Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 handbook, full pagewidth 90° +1 135° +0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 5 0° 0 +0.2 4 GHz 180° 0 0.2 0.5 100 MHz 2 +5 −0.2 −5 −0.5 −135° −1 −2 −45° MLD910 1.0 −90° IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. handbook, full pagewidth 90° +1 135° +0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 5 0° 0 +0.2 100 MHz 0.2 0.5 4 GHz −0.2 1 2 +5 180° 0 −5 −0.5 −135° −1 −2 −45° MLD911 1.0 −90° IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.8 Output reflection coefficient (s22); typical values. 2002 Sep 06 6 Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 handbook, halfpage s2 0 MLD912 handbook, halfpage 25 MLD913 12 (dB) −10 s21 2 (dB) 20 −20 (1) (2) −30 15 −40 (3) −50 10 0 1000 2000 3000 f (MHz) PD = −30 dBm; ZO = 50 Ω. (1) IS = 18.7 mA; VS = 3.3 V. (2) IS = 14.6 mA; VS = 3 V. (3) IS = 10.6 mA; VS = 2.7 V. 4000 0 1000 2000 3000 f (MHz) 4000 IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.9 Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values. handbook, halfpage 20 MLD914 handbook, halfpage 20 MLD915 PL (dBm) 10 (1) (2) (3) PL (dBm) 10 (1) (3) (2) 0 0 −10 −10 −20 −40 −30 −20 −10 PD (dBm) 0 −20 −40 −30 −20 −10 PD (dBm) 0 f = 1 GHz; ZO = 50 Ω. (1) VS = 3.3 V. (2) VS = 3 V. (3) VS = 2.7 V. f = 2.2 GHz; ZO = 50 Ω. (1) VS = 3.3 V. (2) VS = 3 V. (3) VS = 2.7 V. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2.2 GHz; typical values. 2002 Sep 06 7 Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 handbook, halfpage 5.5 MLD916 handbook, halfpage 12 MLD917 NF (dB) 5.3 K 8 5.1 4.9 (1) (2) (3) 4 4.7 4.5 0 1000 2000 f (MHz) 3000 0 0 1000 2000 3000 4000 f (MHz) ZO = 50 Ω. (1) IS = 10.6 mA; VS = 2.7 V. (2) IS = 14.6 mA; VS = 3 V. (3) IS = 18.7 mA; VS = 3.3 V. IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. 2002 Sep 06 8 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Scattering parameters VS = 3 V; IS = 14.6 mA; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C. s11 f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 9 MAGNITUDE (ratio) 0.25122 0.27070 0.27979 0.28323 0.28557 0.28673 0.28517 0.27902 0.26682 0.24746 0.21894 0.18164 0.14000 0.10418 0.09469 0.10595 0.11609 0.10827 0.09866 0.08693 0.10090 ANGLE (deg) 14.607 2.759 −7.969 −14.78 −20.13 −24.14 −27.57 −29.93 −31.81 −33.12 −33.8 −32.67 −26.75 −10.16 15.051 33.415 42.888 50.017 60.967 80.355 102.07 s21 MAGNITUDE (ratio) 9.33681 9.42458 9.63627 9.76543 9.93782 10.03633 10.11638 10.26450 10.40572 10.44088 10.46224 10.45202 10.34342 9.87989 9.20393 8.68177 8.18809 7.93039 7.77538 7.33775 6.90878 ANGLE (deg) 12.018 5.676 −8.447 −19.02 −27.93 −36.88 −46.47 −56.05 −65.76 −76.97 −88.33 −100.3 −112.6 −122.9 −129.5 −135.4 −142.2 −151.5 −162.2 −172.6 177.1 s12 MAGNITUDE (ratio) 0.032124 0.028303 0.026297 0.024833 0.023234 0.021523 0.019830 0.018230 0.016902 0.015759 0.014310 0.013012 0.011826 0.010171 0.008664 0.007541 0.006655 0.006042 0.006205 0.007039 0.008241 ANGLE (deg) 16.445 6.37 −4.545 −10.24 −14.62 −17.42 −19.83 −21.14 −21.62 −22.32 −22.64 −23.13 −23.27 −23.23 −16.9 −9.957 −0.835 12.444 29.297 40.351 46.053 s22 MAGNITUDE (ratio) 0.26458 0.20645 0.1543 0.15203 0.16867 0.19196 0.21421 0.23292 0.24605 0.25113 0.24367 0.22184 0.18787 0.13049 0.1294 0.1127 0.092234 0.059268 0.015829 0.028159 0.075298 ANGLE (deg) 64.156 64.153 52.558 39.347 27.926 19.293 12.703 7.154 2.582 −1.26 −4.817 −7.573 −8.489 −4.601 9.578 18.402 23.406 26.453 38.211 −152.8 −133.1 KFACTOR 1.6 1.8 1.9 1.9 2.0 2.1 2.2 2.4 2.5 2.7 3.0 3.4 3.9 4.9 6.2 7.5 9.0 10.3 10.3 9.6 8.7 2002 Sep 06 Philips Semiconductors MMIC wideband amplifier BGM1012 Product specification Philips Semiconductors Product specification MMIC wideband amplifier PACKAGE OUTLINE Plastic surface mounted package; 6 leads BGM1012 SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2002 Sep 06 10 Philips Semiconductors Product specification MMIC wideband amplifier DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BGM1012 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Sep 06 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613516/03/pp12 Date of release: 2002 Sep 06 Document order number: 9397 750 10021