BLA0912-250

BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. 1.2 Features s s s s High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications s Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN. 1.4 Quick reference data Table 1: Quick reference data Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise. Mode of operation All modes TCAS: 1030 MHz to 1090 MHz Mode-S: 1030 MHz to 1090 MHz JTIDS: 960 MHz to 1215 MHz Conditions tp = 100 µs; δ = 10 % tp = 32 µs; δ = 0.1 % tp = 128 µs; δ = 2 % tp = 340 µs; δ = 1 % tp = 3.3 ms; δ = 22 % VDS (V) 36 36 36 36 36 PL (W) 250 250 250 250 200 Gp ∆Gp ηD (dB) (dB) (%) 13.5 0.8 14.0 0.8 13.5 0.8 13.5 0.8 13.0 1.2 50 50 50 50 45 Pulse droop (dB) 0.1 0 0.1 0.2 0.2 tr tf Zth(j-h) ϕR (ns) (ns) (K/W) (deg) 25 25 25 25 25 6 6 6 6 6 0.18 0.07 0.15 0.20 0.45 ±5 ±5 ±5 ±5 ±5 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] 2 Top view 3 1 Simplified outline Symbol 1 2 3 sym039 [1] Connected to flange. 3. Ordering information Table 3: Ordering information Package Name BLA0912-250 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Ptot Tstg Tj Parameter drain-source voltage (DC) gate-source voltage (DC) total power dissipation storage temperature junction temperature Th ≤ 25 °C; tp = 50 µs; δ = 2 % Conditions Min −65 Max 75 ±22 700 +150 200 Unit V V W °C °C 5. Thermal characteristics Table 5: Symbol Zth(j-h) [1] Thermal characteristics Parameter Conditions [1] Typ 0.18 Unit K/W thermal impedance from junction to heatsink Th = 25 °C Thermal resistance is determined under RF operating conditions; tp = 100 µs, δ = 10 %. 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 2 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 6. Characteristics Table 6: Characteristics Conditions Min 75 4 45 Typ 9 60 Max Unit 5 1 1 V V µA A µA S mΩ Symbol Parameter V(BR)DSS drain-source breakdown VGS = 0 V; ID = 3 mA voltage VGSth IDSS IDSX IGSS gfs RDSon gate-source threshold voltage drain-source leakage current on-state drain current gate-source leakage current forward transconductance drain-source on-state resistance VDS = 10 V; ID = 300 mA VGS = 0 V; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 V VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A 7. Application information Table 7: Application information RF performance in common source class-AB circuit; Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise. Symbol VDS f PL Gp ηD Zth tr tf Parameter drain-source voltage frequency load power power gain drain efficiency thermal impedance rise time fall time pulse droop spurious Th heatsink temperature tp = 100 µs; δ = 10 % VSWRL = 2:1 tp = 100 µs; δ = 10 % POUT = 250 W tp = 100 µs; δ = 10 % tp = 100 µs; δ = 10 % Conditions Min 960 250 12 40 −55 Typ 13 50 25 6 0.1 0.2 50 25 0.5 −60 +70 Max 36 1215 Unit V MHz W dB % K/W ns ns dB dBc °C 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 3 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 7.1 Ruggedness in class-AB operation The BLA0912-250 is capable of withstanding a load mismatch corresponding to VSWR = 5:1 through all phases under the following conditions: VDS = 36 V; f = 960 MHz to 1215 MHz at rated load power. Table 8: 960 1030 1090 1140 1215 Typical impedance values ZS (Ω) 0.89 − j1.70 1.37 − j1.23 2.09 − j1.27 2.40 − j1.97 1.51 − j2.61 ZL (Ω ) 1.53 − j1.13 1.47 − j0.99 1.38 − j0.85 1.30 − j0.71 1.17 − j0.47 Frequency (MHz) 15 Gp (dB) 13 001aab078 ηD Gp 55 ηD (%) 45 Gp (dB) 18 16 14 12 10 (1) (4) (3) (5) (2) 001aab079 11 35 9 25 8 6 7 15 4 5 940 990 1040 1090 1140 1190 f (MHz) 5 1240 2 0 100 200 PL(W) 300 Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. (1) f = 960 MHz. (2) f = 1030 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. Fig 1. Power gain and drain efficiency as function of frequency; typical values. Fig 2. Power gain as function of load power; typical values. 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 4 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 300 (2) 250 PL (W) 200 001aab080 60 (5) 50 (1) 001aab081 (1) (5) (4) (3) ηD (%) 40 (2) (3) 30 (4) 150 100 20 50 10 0 0 2 4 6 8 10 12 14 16 Pi (W) 0 0 50 100 150 200 250 PL (W) 300 Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. (1) f = 960 MHz. (2) f = 1030 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. (1) f = 960 MHz. (2) f = 1030 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. Fig 3. Load power as function of input power; typical values. Fig 4. Efficiency as function of load power; typical values. 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 5 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 40 40 C1 C2 C3 C4 C5 R1 R2 C8 C9 C10 60 C6 C7 001aab083 Dimensions in mm. See Table 9 for list of components. Fig 5. Component layout for class-AB test circuit. Table 9: C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 [1] [2] [3] List of components for class-AB test circuit (see Figure 5). [1] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor KEMET tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor KEMET tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor SMD resistor (0805) philips resistor Value 1 nF 22 pF 1 nF 47 µF 56 pF 22 pF 47 pF 22 µF 1 nF 22 pF 51 Ω 49.9 Ω 2333 156 14999 [3] [2] [2] [2] [2] [3] [2] [3] Component Catalogue no. T491D476M020AS T491D226M020AS Layout files are available on request in gerber and dxf format. American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 6 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor L2 L1 C1 L3 C2 L4 C3 C4 L5 L6 C5 L7 L8 001aab085 See Table 10 for details of striplines. Fig 6. Layout of class-AB test circuit. Table 10: Layout details for class-AB test circuit (see Figure 6). [1] Description stripline stripline stripline Dimensions 5 mm × 0.8 mm 1.2 mm × 3.5 mm cap. pad: 1 mm × 1 mm (1×) curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×) vertical: 3.9 mm × 0.8 mm (2×) vertical: 9.4 mm × 0.8 mm (3×) horizontal: 0.5 mm × 0.8 mm (4×) L3 C2 L4 C3 Output circuit C4 L5 L6 C5 L7 stripline stripline stripline stripline stripline 0.2 mm × 13 mm + 19 mm × 17.1 mm 2.5 mm × 2.3 mm 4 mm × 1 mm 3 mm × 6.6 mm curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×) vertical: 2.2 mm × 0.8 mm (2×) vertical: 6 mm × 0.8 mm (1×) horizontal: 1 mm × 0.8 mm (2×) L8 stripline 2.5 mm × 0.8 mm stripline stripline stripline stripline 3 mm × 2 mm 4 mm × 6.5 mm 5 mm × 1 mm 8.8 mm × 30 mm + 0.2 mm × 13 mm Component Input circuit L1 C1 L2 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 7 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor Layout details for class-AB test circuit (see Figure 6). [1] …continued Description stripline Dimensions curve: width 1 mm; angle 90°; radius 0.8 mm vertical: 5 mm × 1 mm horizontal: 19 mm × 1 mm tapered line: WI = 1 mm; L = 12 mm; angle = 60° Table 10: 1/4 λ line Component [1] Striplines are on a Rodgers Duroid 6010 printed-circuit board (εr = 10.2); thickness = 0.64 mm. 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 8 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 7. Package outline. 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 9 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 9. Revision history Table 11: Revision history Release date 20040722 Data sheet status Product data Change notice Order number 9397 750 13275 Supersedes BLA0912-250_N_1 Document ID BLA0912-250_2 Modifications: BLA0912-250_N_1 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Preliminary specification 9397 750 12224 - 20031024 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 10 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 10. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 13275 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 22 July 2004 11 of 12 Philips Semiconductors BLA0912-250 Avionics LDMOS transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 July 2004 Document order number: 9397 750 13275 Published in The Netherlands