BLC6G10LS-200

BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR = −39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLC6G10-200 (SOT895-1) 1 3 2 2 3 sym112 1 BLC6G10LS-200 (SOT896-1) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLC6G10-200 BLC6G10LS-200 Description plastic flanged cavity package; 2 mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 200 Unit V V A °C °C BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 2 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Thermal characteristics Parameter Conditions Type Min Typ Max 0.52 Unit K/W K/W 0.43 Tcase = 80 °C; BLC6G10-200 Rth(j-case) thermal resistance from junction to case PL = 40 W BLC6G10LS-200 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 150 mA VDS = 28 V; ID = 950 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 3.75 V; ID = 5.25 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 Typ Max Unit V 2 40 45 - V 5 450 µA A nA S Ω pF V - 7. Application information Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol PL(AV) Gp IRL ηD ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W Conditions Min 18.5 25 Typ 40 20 −6.5 27 −39 Max 21.5 −4.5 −36 Unit W dB dB % dBc 7.1 Ruggedness in class-AB operation The BLC6G10-200 and BLC6G10LS-200 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = ; f = 894 MHz. BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 3 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 8. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 D F A D1 U1 q B C c 1 L w1 M A M B M H U2 3 p E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 p 3.38 3.12 Q 1.75 1.50 q 27.94 U1 34.16 33.91 U2 9.98 9.65 w1 0.25 0.01 w2 0.6 0.023 1.345 0.392 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT895-1 ISSUE DATE 05-06-28 06-02-21 Fig 1. Package outline SOT895-1 BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 4 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Plastic earless flanged cavity package; 2 leads SOT896-1 D F A 3 D1 D U1 1 L c H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 Q 1.75 1.50 U1 20.70 20.45 U2 9.98 9.65 w2 0.6 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.392 0.023 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT896-1 ISSUE DATE 05-06-28 06-02-21 Fig 2. Package outline SOT896-1 BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 5 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 9. Abbreviations Table 8: Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 6 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 10. Revision history Table 9: Revision history Release date 20060419 Data sheet status Objective data sheet Change notice Supersedes Document ID BLC6G10-200_6G10LS-200_1 BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 7 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 8 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 2 2 2 3 3 3 3 4 6 7 8 8 8 8 8 8 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 19 April 2006 Document identifier: BLC6G10-200_6G10LS-200_1