BLC6G20-75

BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms (dBc) (dBc) −72 (%) 1.5 38.5 −62.5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efficiency = 38.5 % x ACPR400 = −62.5 dBc x ACPR600 = −72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLC6G20-75 (SOT895-1) 1 3 2 2 3 sym112 1 BLC6G20LS-75 (SOT896-1) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLC6G20-75 BLC6G20LS-75 Description plastic flanged cavity package; 2 mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 225 Unit V V °C °C A BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 2 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Type Min Typ Max Unit Tcase = 80 °C; BLC6G20-75 PL = 75 W BLC6G20LS-75 K/W K/W 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 100 mA VDS = 28 V; ID = 550 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 5 A VGS = VGS(th) + 3.75 V; ID = 3.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 Typ Max Unit V 2 15.5 18 7 0.15 1.6 V 3 300 µA A nA S V 0.185 Ω pF 7. Application information Table 7: Application information Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at VDS = 28 V; IDq = 550 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol PL(AV) Gp IRL ηD Parameter average output power power gain input return loss drain efficiency PL(AV) = 29.5 W PL(AV) = 29.5 W PL(AV) = 29.5 W Conditions Min Typ 29.5 −10 Max 20 −7 −70 2.3 8 Unit W dB dB % dBc dBc % % 17.5 19 36.5 38.5 −72 1.5 4.8 ACPR400 adjacent channel power ratio (400 kHz) PL(AV) = 29.5 W ACPR600 adjacent channel power ratio (600 kHz) PL(AV) = 29.5 W EVMrms EVMM RMS EDGE signal distortion error peak EDGE signal distortion error PL(AV) = 29.5 W PL(AV) = 29.5 W −62.2 −60 7.1 Ruggedness in class-AB operation The BLC6G20-75 and BLC6G20LS-75 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 550 mA; PL = 75 W (CW); f = 1990 MHz. BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 3 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 8. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 D F A D1 U1 q B C c 1 L w1 M A M B M H U2 3 p E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 p 3.38 3.12 Q 1.75 1.50 q 27.94 U1 34.16 33.91 U2 9.91 9.65 w1 0.25 0.01 w2 0.6 0.023 1.345 0.390 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT895-1 ISSUE DATE 05-06-22 05-06-28 Fig 1. Package outline SOT895-1 BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 4 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Plastic earless flanged cavity package; 2 leads SOT896-1 D F A 3 D1 D U1 1 L c H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 Q 1.75 1.50 U1 20.70 20.45 U2 9.91 9.65 w2 0.6 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.390 0.023 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT896-1 ISSUE DATE 05-06-22 05-06-28 Fig 2. Package outline SOT896-1 BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 5 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 9. Abbreviations Table 8: Acronym CDMA CW EDGE EVM GSM LDMOS RF RMS VSWR W-CDMA Abbreviations Description Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Error Vector Magnitude Global System for Mobile communications Laterally Diffused Metal Oxide Semiconductor Radio Frequency Root Mean Square Voltage Standing Wave Ratio Wideband Code Division Multiple Access BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 6 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 10. Revision history Table 9: Revision history Release date 20060130 Data sheet status Objective data sheet Change notice Doc. number Supersedes Document ID BLC6G20-75_6G20L S-75_1 BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 7 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BLC6G20-75_6G20LS-75_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 8 of 9 Philips Semiconductors BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 2 2 2 2 3 3 3 3 4 6 7 8 8 8 8 8 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2006 Document number: BLC6G20-75_6G20LS-75_1 Published in The Netherlands