BLF1822-10

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: – Output power = 10 W (PEP) – Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz – Efficiency = 39% at 900 MHz, 34% at 2200 MHz – dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (HF to 2200 MHz) • No internal matching for broadband operation. 1 BLF1822-10 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 APPLICATIONS • RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range • Broadcast drivers. DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) f1 = 2200; f2 = 2200.1 f1 = 960; f2 = 960.1 VDS (V) 26 26 IDQ (mA) 85 85 PL (W) 10 (PEP) Gp (dB) 2 Top view MBK584 Fig.1 Simplified outline. ηD (%) typ. 39 dim (dBc) typ. −33 10 (PEP) >11; typ. 13.5 >30; typ. 34 ≤−26; typ. −28 typ. 18.5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 10 2 Philips Semiconductors Product specification UHF power LDMOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature PARAMETER − − − −65 − MIN. 65 BLF1822-10 MAX. V V A °C °C ±15 2.2 +150 200 UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.2 mA VDS = 10 V; ID = 20 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 10 V; ID = 0.75 A VGS = 10 V; ID = 0.75 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4 − 2.8 − − − − − − TYP. − − − − − 0.5 1.2 13 11 0.5 MAX. − 5 1.5 − 40 − − − − − UNIT V V µA A nA S Ω pF pF pF PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; note 1 VALUE 5 0.5 UNIT K/W K/W 2003 Feb 10 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 APPLICATION INFORMATION 2.2 GHz RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 IDQ (mA) 85 PL (W) 10 (PEP) Gp (dB) >11 ηD (%) >30 dim (dBc) ≤−26 Ruggedness in class-AB operation The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power. 102 handbook, halfpage C (pF) 10 MGW642 handbook, halfpage 15 MGW643 60 Cos Cis Gp (dB) 10 Gp ηD (%) 40 ηD Crs 1 5 20 10 − 1 0 10 20 VDS (V) 30 0 0 4 8 12 PL (PEP) (W) 0 16 VGS = 0; f = 1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.2 Input, output and feedback capacitance as functions of drain-source voltage; typical values. Fig.3 Power gain and efficiency as functions of peak envelope load power; typical values. 2003 Feb 10 4 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW644 handbook, halfpage 0 handbook, halfpage 15 MGW645 60 d im (dBc) − 20 d3 d5 − 40 d7 Gp (dB) 10 Gp ηD (%) 40 ηD 5 − 60 20 − 80 0 4 8 12 PL (PEP) (W) 16 0 0 4 8 12 PL (PEP) (W) 0 16 VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 85 mA; f1 = 2200 MHz; f2 = 2200.1 MHz. Fig.4 Intermodulation distortion as a function of peak envelope load power; typical values. Fig.5 Power gain and efficiency as functions of peak envelope load power; typical values. MGW646 MGW647 handbook, halfpage 0 handbook, halfpage 0 d im (dBc) − 20 d3 − 40 d5 d7 d3 (dBc) − 20 − 40 − 60 (1) (2) (3) − 80 0 4 8 12 PL (PEP) (W) 16 − 60 0 4 8 12 PL (PEP) (W) 16 VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. VDS = 26 V; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. (1) IDQ = 115 mA. (2) IDQ = 55 mA. (3) IDQ = 85 mA. Fig.6 Intermodulation distortion as a function of peak envelope load power; typical values. Fig.7 Intermodulation distortion as a function of peak envelope load power; typical values. 2003 Feb 10 5 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW648 MGW649 handbook, halfpage 8 handbook, halfpage 6 Zi (Ω) 6 (Ω) ZL 4 RL 2 4 xi 0 XL −2 2 ri −4 0 1.8 1.9 2.0 2.1 f (GHz) 2.2 −6 1.8 1.9 2.0 2.1 f (GHz) 2.2 VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. Fig.8 Input impedance as a function of frequency (series components); typical values. Fig.9 Load impedance as a function of frequency (series components); typical values. handbook, full pagewidth VDD C18 L10 C19 C20 C13 Vgate C6 R1 50 Ω input L1 C2 L4 C3 C4 L5 C7 C9 MGW650 C14 C15 C16 C17 C11 C5 C12 C1 L9 L6 L7 C10 L8 50 Ω output L2 L3 C8 Fig.10 Class-AB test circuit for 2.2 GHz. 2003 Feb 10 6 Philips Semiconductors Product specification UHF power LDMOS transistor List of components (see Figs 10 and 11) COMPONENT C1, C2, C10, C11 C3, C4, C7, C9 C5 C6, C18 C8 C12, C20 C13 C14 C15 C16 C17 C19 L1, L8 L2 L3 L4 L5 L6 L7 L9 L10 R1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION Tekelec variable capacitor; type 37271 tantalum SMD capacitor VALUE 0.6 to 4.5 pF 10 µF; 35 V DIMENSIONS BLF1822-10 CATALOGUE NO. multilayer ceramic chip capacitor; note 1 6.8 pF multilayer ceramic chip capacitor; note 1 2.4 pF multilayer ceramic chip capacitor; note 1 1.5 pF multilayer ceramic chip capacitor; note 2 1 nF multilayer ceramic chip capacitor; note 1 10 pF multilayer ceramic chip capacitor; note 1 51 pF multilayer ceramic chip capacitor; note 1 120 pF multilayer ceramic chip capacitor electrolytic capacitor electrolytic capacitor stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 2 turns enamelled 0.5 mm copper wire metal film resistor 390 Ω; 0.6 W 100 nF 47 µF; 35 V 100 µF; 63 V 50 Ω 50 Ω 58.1 Ω 11.3 Ω 11.3 Ω 52.8 Ω 50 Ω 64.7 Ω 4 × 1.5 mm 7 × 1.5 mm 12 × 1.2 mm 9 × 10 mm 11.5 × 10 mm 11 × 1.4 mm 5.5 × 1.5 mm 38 × 1 mm int. dia. = 3 mm; length = 3 mm 2322 156 11009 2222 581 16641 2222 036 90094 2222 037 58101 3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr = 2.2); thickness 0.51 mm. 2003 Feb 10 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 handbook, full pagewidth C20 C19 VDD C17 L10 C11 C12 C6 Vgate C1 C2 R3 C5 C8 C10 C3 C4 C7 C9 BLF1822-10 2.2 GHz input BLF1822-10 2.2 GHz output 60 C13 C14 C15 C16 C18 60 BLF1822-10 2.2 GHz input BLF1822-10 2.2 GHz output 33 MGW651 33 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.2 GHz class-AB test circuit. 2003 Feb 10 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 APPLICATION INFORMATION 960 MHz RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) f1 = 960; f2 = 960.1 VDS (V) 26 IDQ (mA) 85 PL (W) 10 (PEP) Gp (dB) typ. 18.5 ηD (%) typ. 39 dim (dBc) typ. −33 Ruggedness in class-AB operation The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. handbook, halfpage G 24 p (dB) 20 MGW652 60 MGW653 ηD handbook, halfpage 0 Gp (%) 50 d im (dBc) − 20 16 ηD 40 d3 d5 d7 12 30 − 40 8 20 − 60 4 10 − 80 0 0 4 8 12 0 16 20 PL (PEP) (W) 0 4 8 12 16 20 PL (PEP) (W) VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz. Fig.12 Power gain and efficiency as functions of peak envelope load power; typical values. Fig.13 Intermodulation distortion as a function of peak envelope load power; typical values. 2003 Feb 10 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW654 MGW655 handbook, halfpage 4 handbook, halfpage 10 Zi (Ω) 0 ri ZL (Ω) 8 RL 6 −4 4 xi −8 2 XL − 12 800 900 1000 1100 1200 f (MHz) 0 800 900 1000 1100 1200 f (MHz) VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Load impedance as a function of frequency (series components); typical values. handbook, full pagewidth R2 Vgate C19 C18 C17 R1 L12 VDD C15 C14 C13 C9 L11 C16 50 Ω input L1 C1 L3 L2 C2 L5 L6 C4 C3 L7 C5 C6 C7 L9 L4 L10 L8 C8 C10 C11 C12 50 Ω output MGW656 Fig.16 Class-AB test circuit for 960 MHz. 2003 Feb 10 10 Philips Semiconductors Product specification UHF power LDMOS transistor List of components (see Figs 16 and 17) COMPONENT C1 C2, C6 C3 C4, C5 C7 C8 C19, C14, C19 C10, C17 C12, C14, C19 C13 C15 C16 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 R1 R2 Notes 1. American Technical Ceramics type 500A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION Tekelec variable capacitor; type 27291 Tekelec variable capacitor; type 27271 VALUE 0.8 to 8 pF 0.6 to 4.5 pF DIMENSIONS BLF1822-10 CATALOGUE NO. multilayer ceramic chip capacitor; note 1 82 pF multilayer ceramic chip capacitor; note 1 0.3 pF multilayer ceramic chip capacitor; note 1 2.1 pF multilayer ceramic chip capacitor; note 2 56 pF multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum SMD capacitor multilayer ceramic chip capacitor electrolytic capacitor stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 2 stripline; note 3 3 turns enamelled 0.5 mm copper wire resistor resistor 51 Ω, 0.25 W 1 kΩ, 0.25 W 100 pF 1 nF 6.8 µF 100 nF 100 µF; 63 V 50 Ω 50 Ω 19.2 Ω 50 Ω 50 Ω 24.5 Ω 19.2 Ω 50 Ω 50 Ω 64.4 Ω 64.4 Ω 7.5 × 1.57 mm 34.5 × 1.57 mm 7 × 6 mm 11 × 1.57 mm 9.5 × 1.57 mm 2.2 × 4.4 mm 13 × 6 mm 27.5 × 1.57 mm 8 × 1.57 mm 6.4 × 1 mm 38 × 1 mm int. dia. = 4 mm length = 5 mm size 1206 size 1206 2222 581 16641 2222 037 58101 size 0805 size 0805 multilayer ceramic chip capacitor; note 1 68 pF 3. The striplines are on a double copper-clad printed-circuit board with Rogers 4350 dielectric (εr = 3.81); thickness 0.76 mm. 2003 Feb 10 11 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 handbook, full pagewidth C19 C14 C12 C17 C18 R2 Vgate R1 C15 VDD C13 L12 C11 C9 C10 C16 C7 C1 C2 C5 C6 C8 C3 C4 BLF1822-10 960 MHz input BLF1822-10 960 MHz output 60 60 BLF1822-10 960 MHz input BLF1822-10 960 MHz output 50 50 MGW657 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Rogers 4350 dielectric (εr = 3.81), thickness 0.76 mm. The other side is unetched and serves as a ground plane. Fig.17 Component layout for 960 MHz class-AB test circuit. 2003 Feb 10 12 Philips Semiconductors Product specification UHF power LDMOS transistor PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads BLF1822-10 SOT467C D A F 3 D1 U1 q C B c 1 E1 H U2 E A p w1 M A M B M 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.235 0.065 0.225 0.055 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION SOT467C REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 2003 Feb 10 13 Philips Semiconductors Product specification UHF power LDMOS transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BLF1822-10 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Feb 10 14 Philips Semiconductors Product specification UHF power LDMOS transistor NOTES BLF1822-10 2003 Feb 10 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Feb 10 Document order number: 9397 750 10914