BLF2022-125

DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19% – ACPR = −42 dBc at 3.84 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) • Internally matched for ease of use. APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 MBL367 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, 3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF. MODE OF OPERATION single carrier W-CDMA f (MHz) 2110 to 2170 VDS (V) 28 PL avg (W) 30 Gp (dB) typ 12 ηD (%) typ 19 dim (dBc) typ −42 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Mar 07 2 − − − −65 − MIN. 65 ±15 tbd +150 200 MAX. V V A °C °C UNIT Philips Semiconductors Objective specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-c Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IGSS gfs RDSon Crss PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance CONDITIONS VGS = 0; ID = 2.5 mA VDS = 10 V; ID = 240 mA VGS = 0; VDS = 26 V VGS = ±15 V; VDS = 0 VDS = 10 V; ID = 16 A VGS = VGSth + 9 V; ID = 8 A VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4.5 − − − − − PARAMETER thermal resistance from junction to case note 1 CONDITIONS BLF2022-125 VALUE 0.55 UNIT K/W TYP. − − − − 9.5 0.07 tbd MAX. − 5.5 10 40 − − − UNIT V V µA nA S Ω pF 2003 Mar 07 3 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 APPLICATION INFORMATION RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF. SYMBOL Gp PARAMETER common-source power gain CONDITIONS VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz VD = 28 V; Pout = 20 W (AV) single carrier W-CDMA;VSWR = 5:1 through all phases MIN. 11 TYP. 12 MAX. − UNIT dB ηD drain efficiency 17 19 − % ACPR adjacent channel power ratio − −49 −39 dBc IRL input return loss − −10 −6 dB ψ output mismatch no degradation in RF performance before and after test RF performance at Th = 25 °C in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64 channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz. SYMBOL Gp ηD ACPR PARAMETER common-source power gain drain efficiency adjacent channel power ratio CONDITIONS VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA; ACPR is measured at f1 = −5 MHz and f2 = +5 MHz VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA; ACPR is measured at f1 = −10 MHz and f2 = +10 MHz VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA MIN. − − − TYP. 12 19 −40 MAX. − − − UNIT dB % dBc d3 third order intermodulation distortion input return loss − −36 − dB IRL − −10 − dB 2003 Mar 07 4 Philips Semiconductors Objective specification UHF power LDMOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads BLF2022-125 SOT634A Package under development D Philips Semiconductors reserves the right to make changes without notice. A F 3 D1 U1 q C B c L 1 U2 p w1 M A M B M E1 E A L 2 Q b w2 M C M 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.83 3.68 0.190 0.145 b 12.82 12.57 0.505 0.495 c 0.15 0.08 0.006 0.003 D 22.58 22.12 0.889 0.871 D1 22.56 22.15 0.888 0.872 E E1 F 1.14 0.89 0.045 0.035 L 5.33 4.32 0.210 0.170 p 3.38 3.12 0.133 0.123 Q 1.70 1.45 0.067 0.057 q 27.94 1.100 U1 34.16 33.91 1.345 1.335 U2 13.84 13.59 0.545 0.535 w1 0.25 0.010 w2 0.51 0.020 13.34 13.34 13.08 13.08 0.525 0.525 0.515 0.515 OUTLINE VERSION SOT634A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-11-27 2003 Mar 07 5 Philips Semiconductors Objective specification UHF power LDMOS transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BLF2022-125 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Mar 07 6 Philips Semiconductors Objective specification UHF power LDMOS transistor NOTES BLF2022-125 2003 Mar 07 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp8 Date of release: 2003 Mar 07 Document order number: 9397 750 10919