BLF2045

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Dec 06 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation. APPLICATIONS • Communication transmitter applications (PCN/PCS) in the 1.8 to 2.2 GHz frequency range. 3 BLF2045 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. 2 Top view MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 PL (W) 30 (PEP) Gp (dB) >10 ηD (%) >30 dim (dBc) ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS − − − −65 − MIN. MAX. 65 ±15 4.5 150 200 V V A °C °C UNIT 1999 Dec 06 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10 V; ID = 70 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 10 V; ID = 2.5 A VGS = VGSth + 9 V; ID = 2.5 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 1.5 − 9 − − − − − − TYP. − − − − − 2 340 38 31 1.7 PARAMETER thermal resistance from junction to heatsink CONDITIONS P tot = 87.5 W; Th = 25 °C; note 1 BLF2045 VALUE 2 UNIT K/W MAX. − 3.5 5 − 125 − − − − − UNIT V V µA A nA S mΩ pF pF pF 100 C (pF) Coss Ciis 10 Crss 1 0 VGS = 0; f = 1 MHz. 10 20 VDS (V) 30 Fig.2 Input, output and feedback capacitance as functions of drain-source voltage, typical values. 1999 Dec 06 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 APPLICATION INFORMATION RF performance in a common source class-AB circuit. T h = 25 °C; Rth mb-h = 0.65 K/W, unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 IDQ (mA) 180 PL (W) 30 (PEP) Gp (dB) >10 ηD (%) >30 dim (dBc) ≤−25 Ruggedness in class-AB operation The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz. 20 GP (dB) 16 G 50 ηD (%) 40 12 η 30 8 20 4 10 0 0 10 20 30 40 50 PL (PEP) (W) 0 Class-AB operation; V DS = 26 V; I DQ = 180mA; f 1 = 2000 MHz; f2 = 2000.1 MHz. Fig.3 Power gain and efficiency as a functions of peak envelope load power, typical values. 1999 Dec 06 4 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 0 dim (dBc) 0 d3 (dBc) -20 d3 -20 -40 d5 d7 -40 (1) (3) (2) -60 0 10 20 30 40 50 PL (PEP) (W) -60 0 10 20 30 40 50 PL (PEP) (W) VDS = 26 V; IDQ = 180 mA; Th ≤ 25 °C; f 1 = 2000 MHz; f2 = 2000.1 MHz.. (1) I DQ = 140mA (2) IDQ = 180mA (3) IDQ = 220mA VDS = 26 V;Th ≤ 25 °C; f1 = 2000 MHz; f 2 = 2000.1 MHz. Fig.4 Intermodulation distortion as a function of peak envelope load power; typical values. Fig.5 Intermodulation distortion as a function of peak envelope load power; typical values. 5 zi (Ω) 4 6 ZL (Ω) 4 2 3 xi 0 2 -2 1 ri 0 1.8 2 2.2 f (GHz) -6 1.8 2 RL XL -4 2.2 f (GHz) VDS = 26 V; IDQ = 180 mA; PL = 45 W; T h ≤ 25 °C. VDS = 26 V; IDQ = 180 mA; PL = 45 W; T h ≤ 25 °C. Fig.6 Input impedance as a function of frequency (series components); typical values. Fig.7 Load impedance as a function of frequency (series components); typical values. 1999 Dec 06 5 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 F1 R1 Vgate C11 C6 L12 C12 C13 C14 C15 C16 R2 Vdd L4 C5 Output 50 Ohm L1 C1 L2 C3 L3 C2 L5 L6 C4 L7 L8 C10 L10 L14 L9 L11 L13 C7 L15 C9 C8 Output 50 Ohm L16 Fig.8 Testcircuit for 2 GHz. 1999 Dec 06 6 Philips Semiconductors Preliminary specification UHF power LDMOS transistor List of components COMPONENT C2, C4, C7, C8 C3 C1, C5, C9, C10 C11 C12 C6, C13, C14, C15 C16 F1 L1 L2 L3 L4, L12 L5 L6 L7 L8 L9 L10 L11 L13 L14 L15 L16 R1, R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION Tekelec variable capacitor; type 37281 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor tantal SMD capacitor electrolytic capacitor Ferroxcube chip-bead 8DS3/3/8/9-4S2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 metal film resistor 50 Ω 50 Ω 34.3 Ω 50 Ω 34.3 Ω 23.6 Ω 5.6 Ω 3.5 Ω 31.9 Ω 24.9 Ω 50 Ω 50 Ω 26.3 Ω 50 Ω 50 Ω 10 Ω, 0.6 W 13 × 0.9 mm 2 × 0.9 mm 15 × 1.7 mm 37 × 0.9 mm 6 × 1.7 mm 13 × 2.9 mm 6 × 15.8 mm 6 × 26 mm 12 × 1.9 mm 7.4 × 2.7 mm 3 x 0.9 mm 4.15 × 0.9 mm 2.5 × 2.5 mm 2.8 × 0.9 mm 14 × 0.9 mm VALUE 0.4 to 2.5 pF 2.4 pF 11 pF 1 nF 100 nF 4.5 µF; 50 V 100 µF; 63 V DIMENSIONS BLF2045 CATALOGUE NO. 2222 581 16641 2222 037 58101 4330 030 36301 2322 156 11009 3. The striplines are on a double copper-clad PCB with Teflon dielectric (εr = 6.15); thickness 0.64 mm. 1999 Dec 06 7 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 60 60 BLF2045 INPUT 50 BLF2045 OUTPUT 50 C16 C15 F1 C14 C13 C11 C6 R1 C12 R2 C5 C10 C1 C2 C3 C4 C7 C9 C8 BLF2045 INPUT BLF2045 OUTPUT Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 6.15), thickness 0.64 mm. The other side is unetched and serves as a ground plane. Fig.9 Component layout for 2 GHz class-AB test circuit. 1999 Dec 06 8 Philips Semiconductors Preliminary specification UHF power LDMOS transistor PACKAGE OUTLINE BLF2045 Flanged LDMOST package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 q C B c 1 E1 H U2 E A p w1 M A M B M 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.235 0.065 0.225 0.055 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION SOT467C REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-10-28 99-12-06 1999 Dec 06 9 Philips Semiconductors Preliminary specification UHF power LDMOS transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLF2045 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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