BLF276

DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap. PINNING - SOT119D3 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials page BLF276 PIN CONFIGURATION 1 2 d 3 4 g MBB072 s 5 Top view MSA308 6 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 225 108 VDS (V) 50 50 PL (W) 100 100 GP (dB) ≥ 13 ≥ 18 ηD (%) ≥ 50 ≥ 60 December 1997 2 Philips Semiconductors Product specification VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS − − − − −65 − MIN. BLF276 MAX. 110 20 9 150 150 200 UNIT V V A W °C °C THERMAL RESISTANCE SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 150 W; Tmb = 25 °C THERMAL RESISTANCE max. 1.17 K/W handbook, halfpage 10 MRA936 MRA943 240 handbook, halfpage Ptot (W) 200 ID (A) (1) (2) (2) 160 (1) 1 120 80 40 10−1 1 10 0 102 VDS (V) 103 0 20 40 60 80 100 120 140 Tmb (°C) (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power/temperature derating curves. December 1997 3 Philips Semiconductors Product specification VHF power MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 30 mA VGS = 0; VDS = 50 V ±VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 3 A; VDS = 10 V ID = 3 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz MIN. 110 − − 2 2.7 − 8 − − − BLF276 TYP. MAX. UNIT − − − − − 0.4 12 240 95 7 − 1 1 4.5 − 0.6 − − − − V mA µA V S Ω A pF pF pF MRA945 MRA940 handbook, halfpage 0 handbook,16 halfpage TC (mV/K) −1 ID (A) 12 −2 8 −3 4 −4 −5 10−2 VDS = 10 V. 0 10−1 1 ID (A) 10 0 2 4 6 8 10 12 14 VGS (V) VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. Fig.5 Drain current as a function of gate-source voltage, typical values. December 1997 4 Philips Semiconductors Product specification VHF power MOS transistor BLF276 handbook, halfpage 1 MRA944 MRA934 600 handbook, halfpage C (pF) 500 RDS (on) (Ω) 0.8 400 0.6 300 0.4 200 0.2 Cos Cis 100 0 0 20 40 60 80 100 120 140 Tj (°C) 0 0 10 20 30 40 50 VDS (V) ID = 3 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. handbook, 50 halfpage MRA935 Crs (pF) 40 30 20 10 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. December 1997 5 Philips Semiconductors Product specification VHF power MOS transistor APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 °C unless otherwise specified. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 225 108 VDS (V) 50 50 IDQ (mA) 50 50 PL (W) 100 100 GP (dB) ≥ 13 typ. 15 ≥ 18 typ. 22 BLF276 ηD (%) ≥ 50 typ. 57 ≥ 60 typ. 75 Ruggedness in class-B operation The BLF276 is capable of withstanding a load mismatch corresponding to VSWR = 8 through all phases under the following conditions: VDS = 50 V; f = 225 MHz; Tmb = 25 °C at rated load power. MRA937 20 handbook, halfpage gain (dB) 16 gain 100 MRA942 η (%) 80 140 handbook, halfpage P L (W) 120 100 12 η 60 80 60 8 40 40 20 20 0 4 0 0 20 40 60 80 100 0 120 140 PL (W) 0 2 4 6 PIN (W) 8 Class-B operation; VDS = 50 V; IDQ = 50 mA; f = 225 MHz. Class-B operation; VDS = 50 V; IDQ = 50 mA; f = 225 MHz. Fig.9 Power gain and efficiency as functions of load power, typical values. Fig.10 Load power as a function of input power, typical values. December 1997 6 Philips Semiconductors Product specification VHF power MOS transistor BLF276 handbook, full pagewidth C15 L14 50 Ω input L1 C2 C1 L2 C3 L3 L4 L5 C5 L6 C4 L7 L8 C7 R4 C8 L21 C9 C13 R2 R3 C14 C12 L9 L10 C6 DUT L11 L13 L12 C10 L15 C16 L16 L17 C17 C19 L18 C18 L19 L20 50 Ω output MEA808 C11 +VDD f = 225 MHz. Fig.11 Test circuit for class-B operation. December 1997 7 Philips Semiconductors Product specification VHF power MOS transistor List of components (class-B test circuit) COMPONENT C1, C9, C19 C2 C3, C5, C16, C18 C4 C6, C7 C8, C14 C10 C11 C12 C13 C15 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) foil capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 1) stripline (note 3) stripline (note 3) stripline (note 3) 2 turns enamelled 1.5 mm copper wire stripline (note 3) stripline (note 3) 2 turns enamelled 1.5 mm copper wire stripline (note 3) stripline (note 3) stripline (note 3) VALUE 680 pF, 500 V 15 pF, 500 V 4 to 40 pF 13 pF, 500 V 62 pF, 500 V 100 nF 100 pF, 500 V 100 nF, 100 V 10 nF 10 µF, 63 V 2 × 33 pF in parallel, 500 V 18 pF, 500 V 49 Ω 49 Ω 49 Ω 18 nH length 8 mm width 4 mm length 12 mm width 4 mm length 7.5 mm width 4 mm length 4.2 mm int. dia. 4 mm leads 2 × 1 mm length 15.5 mm width 4 mm length 5 mm width 4 mm length 3.3 mm int. dia. 3 mm leads 2 × 4 mm length 6 mm width 6 mm length 9.5 mm width 6 mm length 10 mm width 6 mm DIMENSIONS BLF276 CATALOGUE NO. 2222 809 08002 2222 852 47104 2222 368 21204 2222 852 47103 2222 030 38109 C17 L1 L2 L3 L4 L5 L6 L7 49 Ω 49 Ω 16 nH L8 L9 L10, L11 31 Ω 31 Ω 31 Ω December 1997 8 Philips Semiconductors Product specification VHF power MOS transistor BLF276 COMPONENT L12 DESCRIPTION 3 turns enamelled 1.5 mm copper wire stripline (note 3) 1 turn enamelled 1.5 mm copper wire stripline (note 3) stripline (note 3) 2 turns enamelled 1.5 mm copper wire stripline (note 3) stripline (note 3) grade 3B Ferroxcube wide-band RF choke 1 W metal film resistor 10 turns potentiometer 0.4 W metal film resistor 0.4 W metal film resistor VALUE 50 nH DIMENSIONS length 4.8 mm int. dia. 5 mm leads 2 × 4 mm length 5 mm width 6 mm int. dia. 2.8 mm leads 2 × 1 mm CATALOGUE NO. L13 L14 L15 L16 L17 31 Ω 36 Ω 36 Ω 17 nH length 16.5 mm width 5 mm length 8 mm width 5 mm length 4.7 mm int. dia. 4 mm leads 2 × 2 mm length 17.5 mm width 5 mm length 8.5 mm width 5 mm 4312 020 36642 L18 L19, L20 L21 R1 R2 R3 R4 Notes 36 Ω 36 Ω 9.09 Ω 50 kΩ 400 kΩ 10 Ω 2222 153 59098 2322 151 74024 2322 151 11009 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass PTFE dielectric (εr = 4.5); thickness 1⁄16 inch. December 1997 9 Philips Semiconductors Product specification VHF power MOS transistor BLF276 handbook, full pagewidth R2 L20 R4 R3 C12 C13 C14 C1 L1 L2 L3 C3 C2 L4 L5 C4 L6 L7 C8 C9 C6 R1 L9 C10 C11 L12 L15 C15 L17 L14 L13 L11 C15 C16 L16 C17 C19 L18 L19 L20 C18 C5 L8 C7 L10 MEA810 handbook, full pagewidth 191 mm mounting screws (8x) rivets (18x) strap strap 70 mm strap strap MEA809 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets between the upper and lower sheets. Fig.12 Component layout for 225 MHz class-B test circuit. December 1997 10 Philips Semiconductors Product specification VHF power MOS transistor BLF276 MRA939 MRA941 8 handbook, halfpage Zi (Ω) 6 4 2 0 −2 −4 −6 xi ri handbook, 16 halfpage ZL (Ω) 12 RL 8 XL 4 0 50 100 150 200 250 f (MHz) 0 0 50 100 150 200 250 f (MHz) Class-B operation; VDS = 50 V; IDQ = 50 mA; RGS = 9.1 Ω; PL = 100 W. Class-B operation; VDS = 50 V; IDQ = 50 mA; RGS = 9.1 Ω; PL = 100 W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MRA938 handbook, 30 halfpage gain (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 0 50 100 150 200 250 f (MHz) Class-B operation; VDS = 50 V; IDQ = 50 mA; RGS = 9.1 Ω; PL = 100 W. Fig.15 Definition of MOS impedance. Fig.16 Power gain as a function of frequency, typical values. December 1997 11 Philips Semiconductors Product specification VHF power MOS transistor PACKAGE OUTLINE Flangeless ceramic package; 6 leads BLF276 SOT119D D A A D1 H1 b2 w2 M A c 2 4 6 H 1 b1 3 b e 5 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.53 3.70 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c 0.16 0.10 D D1 e 6.48 H H1 Q 1.71 1.44 w2 0.51 0.02 w3 0.26 0.01 12.86 12.83 12.59 12.57 21.97 18.55 21.20 18.28 inches 0.178 0.220 0.210 0.160 0.006 0.506 0.505 0.255 0.865 0.730 0.067 0.146 0.210 0.200 0.150 0.004 0.496 0.495 0.835 0.720 0.057 OUTLINE VERSION SOT119D REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 December 1997 12 Philips Semiconductors Product specification VHF power MOS transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLF276 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 13