BLF4G10S-120

BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%) 57 40 46 ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%) (typ) (typ) (typ) −61 [1] −72 [2] 1.5 −31 861 to 961 28 861 to 961 28 GSM EDGE 861 to 961 28 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 = −61 dBc (typ) x ACPR600 = −72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLF4G10-120 (SOT502A) 1 3 2 2 3 sym039 1 BLF4G10S-120 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLF4G10-120 BLF4G10S-120 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +15 12 +150 200 Unit V V A °C °C 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 2 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C PL = 60 W PL = 120 W 0.76 0.65 0.85 0.74 K/W K/W Min Typ Max Unit 6. Characteristics Table 6: Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 10 A Min 65 2.5 2.7 27 Typ 3.1 3.2 30 9.0 Max Unit 3.5 3.7 3 300 V V V µA A nA S Ω pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz 0.09 2.5 - 7. Application information Table 7: Application information Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz. VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; unless otherwise specified. Symbol Gp IRL ηD IMD3 Parameter power gain input return loss drain efficiency third order intermodulation distortion Conditions PL(PEP) = 120 W PL(PEP) = 120 W PL(PEP) = 120 W PL(PEP) = 120 W Min 18 44 Typ 19 −8 46 −31 Max −5 −27 Unit dB dB % dBc 7.1 Ruggedness in class-AB operation The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 850 mA; PL = 120 W (CW); f = 960 MHz. 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 3 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 20.5 Gp (dB) 19.5 001aac400 80 ηD (%) 60 20 Gp (dB) 19 001aac401 60 ηD (%) 40 18.5 ηD Gp 40 ηD 18 20 Gp 20 17.5 16.5 0 50 100 150 PL (W) 0 200 17 0 100 200 PL(PEP) (W) 0 300 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 0 IMD3 (dBc) 001aac403 0 IMD (dBc) −20 001aac402 IMD3 −20 IMD5 −40 IMD7 2 1 4 3 −40 −60 −60 −80 0 100 200 PL(PEP) (W) 300 −80 0 100 200 PL(PEP) (W) 300 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; Tcase = 25 °C; f = 960 MHz (1) IDq = 650 mA (2) IDq = 750 mA (3) IDq = 850 mA (4) IDq = 950 mA Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 4 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 20 Gp (dB) 19 ηD 001aac404 60 ηD (%) 40 −55 ACPR (dBc) ACPR400 −65 001aac405 Gp 18 20 −75 ACPR600 17 0 20 40 60 80 PL(AV) (W) 0 −85 0 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values 001aac406 Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as functions of average load power; typical values −57 ACPR (dBc) −59 3 001aac407 4 EVMrms (%) 3 4 EVM (%) 2 −61 ACPR400 2 1 −63 EVMrms 1 0 0 20 40 60 80 PL(AV) (W) −65 0 20 40 ηD (%) 60 0 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 7. GSM EDGE rms EVM as a function of average load power; typical values Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as functions of drain efficiency; typical values 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 5 of 14 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x Product data sheet Rev. 01 — 10 January 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 9397 750 14549 8. Test information Philips Semiconductors C18 C17 C9 R1 +VG C3 C4 C2 L5 C1 L6 L7 L8 L9 L10 L2 Q1 R2 C8 L1 C13 C10 C12 L4 R3 VDD BLF4G10-120; BLF4G10S-120 L3 L11 C16 L12 RF in C6 RF out C15 C14 C7 C5 C11 001aac408 UHF power LDMOS transistor See Table 8 for list of components. 6 of 14 Fig 9. Class-AB test circuit for operation at 960 MHz xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x Product data sheet Rev. 01 — 10 January 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 9397 750 14549 Philips Semiconductors C18 C9 R1 R2 L1 C17 C8 C4 C10 C3 C2 L2 L3 C13 C12 L4 R3 VDD +VG L5 L6 L7 L8 L9 L10 C14 L11 L12 BLF4G10-120; BLF4G10S-120 C1 C6 C7 C5 C11 C15 C16 001aac409 UHF power LDMOS transistor The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Duroid dielectric (εr = 2.5), thickness 31 mils. The other side is unetched and serves as a ground plane. See Table 8 for list of components. 7 of 14 Fig 10. Component layout for 960 MHz test circuit Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor List of components (see Figure 9 and Figure 10) Value [1] [1] [1] [1] [1] [2] Table 8: C1 C2, C12 C3, C13 C4 C5 Component Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Dimensions 30 pF 47 pF 300 pF 6.2 pF 7.5 pF 0.8 pF to 8 pF 20 nF 10 µF; 35 V C6, C7, C11, trimmer capacitors (Tekelec) C15 C8 C9 C10 C14 C16 C17 C18 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 R1 R2 R3 [1] [2] [3] [4] multilayer ceramic chip capacitor tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor ferrite bead (long) 3 turn inductor ID 4.5 mm, Cu-wire diameter 1 mm 4 turn inductor ID 3 mm, Cu-wire diameter 1 mm ferrite bead (short) stripline stripline stripline stripline stripline stripline stripline stripline SMD resistor SMD resistor metal film resistor [4] [4] [4] [4] [4] [4] [4] [4] [1] [1] [1] [3] 6.8 pF 5.1 pF 56 pF 10 µF; 35 V 220 µF; 63 V grade 4S2 grade 4S2 Z0 = 50 Ω Z0 = 50 Ω Z0 = 25 Ω Z0 = 10 Ω Z0 = 10 Ω Z0 = 25 Ω Z0 = 50 Ω Z0 = 50 Ω 8.2 Ω; 0.1 W 4.7 Ω; 0.1 W 10 Ω; 0.6 W (W × L) 2 mm × 17.2 mm (W × L) 2 mm × 25.4 mm (W × L) 5.6 mm × 17.4 mm (W × L) 16 mm × 10.2 mm (W × L) 16 mm × 10.2 mm (W × L) 5.6 mm × 17.4 mm (W × L) 2 mm × 25.4 mm (W × L) 2 mm × 17.2 mm American Technical Ceramics type 100B or capacitor of same quality. Mounted flat. Low ESR. Striplines are on a double copper-clad Ultralam 2000 PCB (εr = 2.5); thickness = 31 mils. 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 8 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 11. Package outline SOT502A 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 9 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 12. Package outline SOT502B 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 10 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 10. Abbreviations Table 9: Acronym ACPR CDMA CW EDGE ESR EVM GSM IDq LDMOS PEP RF SMD VSWR Abbreviations Description Adjacent Channel Power Ratio Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Equivalent Series Resistance Error Vector Magnitude Global System for Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Peak Envelope Power Radio Frequency Surface-Mount Device Voltage Standing-Wave Ratio 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 11 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 11. Revision history Table 10: Revision history Release date 20060110 Data sheet status Product data sheet Change notice Doc. number 9397 750 14549 Supersedes Document ID BLF4G10-120_ 4G10S-120_1 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 12 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 13 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14549 Published in The Netherlands