BLF4G20LS-110B

BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit; typical values Mode of operation CW GSM EDGE [1] [2] VDS (V) 28 28 PL (W) 100 48 (AV) Gp (dB) 13.4 13.8 ηD (%) 49 38.5 ACPR400 (dBc) −61 [1] ACPR600 (dBc) −74 [2] EVMrms (%) 2.1 ACPR400 at 30 kHz resolution bandwidth. ACPR600 at 30 kHz resolution bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efficiency = 38.5 % (typ) x ACPR400 = −61 dBc (typ) x ACPR600 = −74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Symbol 1 2 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLF4G20LS-110B Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +15 12 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C PL = 40 W PL = 100 W 0.62 0.52 0.71 0.61 K/W K/W Min Typ Max Unit 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 2 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = ±15 V; VDS = 0 V VDS = 10 V; ID = 10 A Min 65 2.5 2.7 27 Typ 3.1 3.2 30 9.0 90 2.5 Max Unit 3.5 3.7 3 300 V V V µA A nA S mΩ pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz 7. Application information Table 7: Application information Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp IRL ηD Parameter power gain input return loss drain efficiency Conditions PL(AV) = 48 W PL(AV) = 48 W PL(AV) = 48 W PL(AV) = 48 W PL(AV) = 48 W PL(AV) = 48 W PL(AV) = 48 W Min 13 36 Typ 13.8 −10 38.5 −61 −74 2.1 7.0 Max Unit −58 −71 3.3 10 dB % dBc dBc % % −6.5 dB ACPR400 adjacent channel power ratio (400 kHz) ACPR600 adjacent channel power ratio (600 kHz) EVMrms EVMM rms EDGE signal distortion error peak EDGE signal distortion error 7.1 Ruggedness in class-AB operation The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 650 mA; PL = 110 W (CW); f = 1990 MHz. 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 3 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 15 Gp (dB) 13 ηD Gp 001aac387 60 ηD (%) 40 15 Gp (dB) 14 Gp 001aac388 50 ηD (%) 40 13 ηD 30 12 11 20 11 20 10 9 0 40 80 120 PL (W) 0 160 10 0 20 40 60 0 80 100 PL(AV) (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values Fig 2. Two-tone CW power gain and drain efficiency as functions of average load power; typical values 0 IMD3 (dBc) 001aac390 0 IMD (dBc) −20 001aac389 IMD3 -20 −40 IMD5 IMD7 -40 1 2 3 4 −60 -60 −80 0 20 40 60 80 100 PL(AV) (W) -80 0 20 40 60 80 100 PL(AV) (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz VDS = 28 V; Tcase = 25 °C; f = 1990 MHz (1) IDq = 550 mA (2) IDq = 650 mA (3) IDq = 750 mA (4) IDq = 850 mA Fig 3. Intermodulation distortion as a function of average load power; typical values Fig 4. Third order intermodulation distortion as a function of average load power; typical values 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 4 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 15 Gp (dB) 14 Gp 001aac391 50 ηD (%) 40 −50 ACPR (dBc) −60 001aac392 13 ηD 12 30 −70 20 −80 ACPR400 ACPR600 11 10 10 0 20 40 60 80 PL(AV) (W) 0 −90 0 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values 001aac393 Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as a function of average load power; typical values −56 ACPR (dBc) −60 3 001aac394 12 EVM (%) 8 4 EVM (%) EVMM −64 ACPR 400 4 −68 EVMrms EVMrms 0 0 20 40 60 80 PL(AV) (W) −72 0 10 20 30 40 ηD (%) 50 2 1 0 VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as functions of drain efficiency; typical values 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 5 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 8. Test information VDD C11 C8 C9 C10 + VG input 50 Ω C1 C3 R1 C4 C2 C6 output 50 Ω C7 C5 001aad664 See Table 8 for list of components. Fig 9. Test circuit for operation at 1990 MHz C11 C8 C3 12.5 mm R1 C4 C9 W1 C10 VDD 17.6 mm 12.0 mm C1 C2 C5 C6 C7 15.2 mm B L F 4 G 2 0 − 1 1 0 B I n p u t − P C S − R ev 2 B L F 4 G 2 0 − 1 1 0 B O u t p u t − P C S − R ev 2 001aac395 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 10. Component layout for 1990 MHz test circuit 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 6 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor List of components (see Figure 10). Value [1] Table 8: C1 C2, C4, C8 C3, C10 C5 C6 C7 C9 C11 R1 W1 [1] Component Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Philips electrolytic capacitor Philips chip resistor hand made wire [1] Dimensions Catalogue number 0.1 pF 11 pF 10 µF 0.5 pF 8.2 pF 0.2 pF 1 µF 220 µF; 35 V 5.6 Ω 0603 5 mm 1812X7R105KL2AB [1] [1] [1] American Technical Ceramics type 100B or capacitor of same quality. 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 7 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 11. Package outline SOT502B 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 8 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 10. Abbreviations Table 9: Acronym ACPR CDMA CW EDGE EVM GSM IDq LDMOS RF VSWR Abbreviations Description Adjacent Channel Power Ratio Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Error Vector Magnitude Global System for Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Radio Frequency Voltage Standing Wave Ratio 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 9 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 11. Revision history Table 10: Revision history Release date Data sheet status Product data sheet Change notice Doc. number 9397 750 14548 Supersedes Document ID BLF4G20LS-110B_1 20060110 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 10 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14548 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 11 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14548 Published in The Netherlands