BLF548

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification Supersedes data of Oct 1992 2003 Sep 26 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262A2 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 s d1 MBB157 5 3 Top view 5 4 MSB008 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 150 Gp (dB) >10 ηD (%) >50 2003 Sep 26 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − − − Tmb ≤ 25 °C; total device; both sections − equally loaded −65 − MAX. UNIT Per transistor section unless otherwise specified VDS VGS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature 65 ±20 15 330 +150 200 V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 330 W; total device; both sections equally loaded total device; both sections equally loaded VALUE 0.5 0.15 UNIT K/W K/W 102 handbook, halfpage ID (A) MRA997 MRA532 handbook, halfpage P 400 350 tot (W) (2) 300 250 200 150 100 50 1 0 (1) (1) (2) 10 1 10 VDS (V) 102 0 20 40 60 80 100 120 Th (oC) (1) Current in this area may be limited by RDSon. (2) Tmb = 25 °C. Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. Fig.3 Power derating curves. 2003 Sep 26 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per transistor section V(BR)DSS IDSS IGSS VGSth gfs RDSon IDSX Cis Cos Crs drain-source breakdown voltage VGS = 0; ID = 40 mA drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance on-state drain current input capacitance output capacitance feedback capacitance VGS = 0; VDS = 28 V VGS = ±20 V; VDS = 0 ID = 160 mA; VDS = 10 V ID = 4.8 A; VDS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz 65 − − 2 2.4 − 16 − − − − − − − 3.5 0.25 20 105 90 25 − 0.5 1 4 − 0.3 − − − − V mA µA V S Ω A pF pF pF PARAMETER CONDITIONS MIN. TYP. MAX. UNIT drain-source on-state resistance ID = 4.8 A; VGS = 10 V VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 GROUP GROUP 2003 Sep 26 4 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 3 handbook, halfpage TC (mV/K) 2 1 0 −1 −2 −3 −4 10−2 MRA524 handbook, halfpage 25 MRA529 ID (A) 20 15 10 5 10−1 0 1 ID (A) 10 0 4 8 12 VGS (V) 16 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig.5 Drain current as a function of gate-source voltage; typical values per section. handbook, halfpage 0.5 MRA522 RDSon (Ω) handbook, halfpage 400 MRA525 C (pF) 300 0.4 0.3 200 0.2 Cis 100 0.1 Cos 0 0 40 80 Tj (oC) 120 0 0 10 20 VDS (V) 30 ID = 4.8 A; VGS = 10 V. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section. Fig.7 Input and output capacitance as functions of drain-source voltage; typical values per section. 2003 Sep 26 5 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 handbook, halfpage 100 Crs (pF) 80 MRA521 60 40 20 0 0 10 20 VDS (V) 30 Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 IDQ (mA) 2 x 160 PL (W) 150 Gp (dB) >10 typ. 11 ηD (%) >50 typ. 55 Ruggedness in class-B operation The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. 2003 Sep 26 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 handbook, halfpage 20 Gp (dB) 16 MRA527 100 Gp 12 ηD (%) 80 handbook, halfpage 200 MRA531 PL (W) 160 60 120 8 ηD 40 80 4 20 40 0 0 0 50 100 150 PL (W) 0 200 0 10 20 PIN (W) 30 Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA; f = 500 MHz; ZL = 1.1 + j0.6 Ω (per section). Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA; f = 500 MHz; ZL = 1.1 + j0.6 Ω (per section). Fig.9 Power gain and efficiency as functions of load power; typical values. Fig.10 Load power as a function of input power; typical values. 2003 Sep 26 7 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 +VD C12 C13 R1 Vbias R2 L10 R7 L11 50 Ω input


  ,,,


,,, C7 C8 C14 R3 L12 L1 L2 C1 L4 L6 DUT L8 L13 L18 L20 C23 L22 C19 C21 L23 C3 C4 C5 C6 C9 C22 L3 C18 C20 L24 C2 L5 L7 L9 L14 L19 L21 C24 R4 C10 C15 L15 MBC232 50 Ω output C11 L16 Vbias R5 R6 C17 R8 L17 C16 +VD f = 500 MHz. Fig.11 Test circuit for class-B operation. List of components class-B test circuit (see Fig.11) COMPONENT C1, C2 C3 C4 C5 C6, C21, C22 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 2 film dielectric trimmer VALUE 22 pF 16 pF 2 to 9 pF 27 pF 2 to 18 pF 390 pF 100 nF 2 × 56 pF in series 2222 852 47104 2222 809 09006 2222 809 09005 DIMENSIONS CATALOGUE NO. C7, C10, C14, C15 multilayer ceramic chip capacitor; note 1 C8, C11, C12, C17 multilayer ceramic chip capacitor C9 multilayer ceramic chip capacitor; note 3 2003 Sep 26 pagewidth 8 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 COMPONENT C13, C16 C18 C19 C20 C23, C24 L1, L3, L22, L24 L2, L23 L4, L5 L6, L7 L8, L9 L10, L11, L16, L17 L12, L15 DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 stripline; note 4 semi-rigid cable; note 5 stripline; note 4 stripline; note 4 stripline; note 4 grade 3B Ferroxcube wideband RF choke 1 turn enamelled 1.5 mm copper wire stripline; note 4 stripline; note 4 stripline; note 4 0.4 W metal film resistor 10 turn potentiometer 0.4 W metal film resistor 1 W metal film resistor VALUE 10 µF, 63 V 18 pF 12 pF 8.2 pF 30 pF 34.5 Ω 50 Ω 22.3 Ω 22.3 Ω 22.3 Ω DIMENSIONS CATALOGUE NO. 2222 030 38109 length 66.5 mm width 4 mm length 66.5 mm width 3.6 mm length 35 mm width 7 mm length 10 mm width 7 mm length 5.5 mm width 7 mm 4312 020 36642 17 nH length 5 mm int. dia. 9 mm leads 2 × 5 mm length 15 mm width 7 mm length 36 mm width 7 mm length 8.5 mm width 7 mm 2322 151 72473 2322 151 71053 2322 151 51009 L13, L14 L18, L19 L20, L21 R1, R5 R2, R6 R3, R4 R7, R8 Notes 22.3 Ω 22.3 Ω 22.3 Ω 24.7 kΩ 5 kΩ 10.5 kΩ 10 Ω 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 4. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 0.79 mm. 5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively. 2003 Sep 26 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 R2 handbook, full pagewidth V DS L10 R7 C13 C12 L22/L23 L1/L2 C8 C7 R3 C1 C3 C4 C2 L4 L5 L6 C5 C6 C9 L7 R4 C10 L8 C14 L11 L12 L13 C18 C19 L9 L14 L18 C22 L19 L21 C24 C23 L20 C20 C21 L15 C15 L16 R8 L17 R6 V DS MBC231 - 1 C17 L24 C16 L3 C11 handbook, full pagewidth 200 mm strap strap strap strap rivets rivets 70 mm strap strap strap strap MBC230 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz class-B test circuit. 2003 Sep 26 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 handbook, halfpage 1 MRA528 Zi (Ω) handbook, halfpage 0 ri 6 ZL (Ω) 5 MRA530 −1 xi 4 RL 3 −2 2 XL −3 1 −4 50 150 250 350 450 550 f (MHz) 0 50 150 250 350 450 550 f (MHz) Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). Fig.13 Input impedance as a function of frequency (series components); typical values per section. Fig.14 Load impedance as a function of frequency (series components); typical values per section. handbook, halfpage G 30 p (dB) 25 MRA526 20 15 handbook, halfpage 10 Zi ZL MBA379 5 0 50 150 250 350 450 550 f (MHz) Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). Fig.15 Definition of MOS impedance. Fig.16 Power gain as a function of frequency; typical values per section. 2003 Sep 26 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 BLF548 scattering parameters VDS = 28 V; ID = 40 mA; note 1 f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast 0.99 0.98 0.93 0.88 0.84 0.81 0.79 0.77 0.76 0.75 0.75 0.74 0.74 0.74 0.75 0.77 0.78 0.80 0.82 0.84 0.85 0.89 0.90 0.92 0.93 0.94 s11 ∠Φ −14.0 −27.6 −52.0 −72.0 −87.7 −100.0 −110.0 −118.0 −124.0 −129.0 −133.0 −141.0 −147.0 −151.0 −154.0 −159.0 −163.0 −167.0 −169.0 −172.0 −175.0 −179.0 177.0 173.0 169.0 166.0 |s21| 13.60 13.20 11.90 10.30 8.93 7.75 6.78 6.00 5.36 4.82 4.37 3.53 2.94 2.50 2.16 1.67 1.33 1.09 0.91 0.77 0.66 0.50 0.39 0.32 0.26 0.22 s21 ∠Φ 171.0 162.0 146.0 134.0 124.0 116.0 110.0 104.0 99.8 95.9 92.3 84.7 78.3 72.6 67.5 58.4 50.4 43.1 36.6 30.6 25.1 15.6 7.5 0.6 −5.4 −10.8 |s12| 0.02 0.04 0.07 0.09 0.10 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.12 0.12 0.12 0.11 0.10 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.04 s12 ∠Φ 81.0 72.4 57.1 44.8 35.2 27.7 21.6 16.7 12.5 8.9 5.7 −1.1 −6.6 −11.5 −15.8 −23.3 −29.7 −35.3 −40.3 −44.7 −48.6 −55.2 −60.4 −64.3 −67.3 −69.2 |s22| 0.89 0.87 0.82 0.77 0.72 0.68 0.66 0.64 0.63 0.62 0.61 0.61 0.61 0.62 0.64 0.67 0.70 0.73 0.75 0.78 0.80 0.84 0.88 0.90 0.92 0.93 s22 ∠Φ −12.8 −25.3 −48.0 −66.6 −81.3 −93.0 −102.0 −109.0 −115.0 −120.0 −124.0 −131.0 −137.0 −140.0 −143.0 −148.0 −151.0 −154.0 −157.0 −160.0 −162.0 −167.0 −170.0 −174.0 −177.0 −179.0 2003 Sep 26 12 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2 D A F D1 U1 q H1 C w2 M C M B c 1 2 H U2 p E1 E 5 A w1 M A M B M w3 M 3 b e 4 Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.39 4.62 b 5.85 5.58 c 0.16 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.28 3.02 Q 2.47 2.20 q 27.94 U1 34.17 33.90 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25 22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03 21.08 17.02 19.56 16.51 0.212 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.097 1.345 0.390 1.100 0.010 0.020 0.010 0.435 0.182 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.087 1.335 0.380 OUTLINE VERSION SOT262A2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-29 2003 Sep 26 13 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Sep 26 14 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep 26 Document order number: 9397 750 11592