BLF574

BLF574 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information f (MHz) CW 225 108 VDS (V) 50 50 PL (W) 500 600 Gp (dB) 26.5 27.5 ηD (%) 70 73 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: N Average output power = 500 W N Power gain = 26.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Industrial, scientific and medical applications I Broadcast transmitter applications NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF574 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 110 +11 56 +150 225 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1] Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 400 W Typ 0.23 Unit K/W Rth(j-c) is measured under RF conditions. BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 2 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 250 mA VDS = 50 V; ID = 500 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 12.5 A Min Typ Max Unit 110 1.25 1.7 29 V 2.25 V 2.8 µA A V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA 1.35 1.85 2.35 V 37.5 17 280 nA S Ω pF pF pF drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.33 A feedback capacitance input capacitance output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz 0.14 1.5 204 72 - Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 1000 mA for total device; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp RLin ηD power gain input return loss drain efficiency Conditions PL = 400 W PL = 400 W PL = 400 W Min Typ Max Unit 25 13 66 26.5 28 20 70 dB dB % BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 3 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 500 Coss (pF) 400 001aaj126 300 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA; PL = 400 W; f = 225 MHz. BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 4 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 7. Application information 7.1 RF performance RF performance in a 500 W application circuit at 225 MHz. 7.1.1 1-Tone CW 001aaj127 001aaj128 30 Gp (dB) 28 Gp 26 80 ηD (%) 60 30 Gp (dB) 28 (7) (6) (5) ηD 40 26 (4) (3) (2) (1) 24 20 24 22 0 200 400 PL(PEP) (W) 0 600 22 0 100 200 300 400 500 PL (W) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA Fig 2. Power gain and drain efficiency as functions of load power; typical values Fig 3. Power gain as function of load power; typical values BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 5 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 60 PL (dBm) 58 Ideal PL PL 56 001aaj129 (1) 54 52 50 24 26 28 30 32 34 Ps (dBm) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 57.32 dBm (540 W) Fig 4. Load power as function of source power; typical values 7.1.2 2-Tone CW 001aaj130 001aaj131 30 Gp (dB) 28 80 ηD (%) 60 0 IMD3 (dBc) −20 ηD (1) (2) (3) Gp 26 40 −40 (4) (5) 24 20 −60 22 0 200 400 0 600 800 PL(PEP) (W) −80 0 200 400 600 800 PL(PEP) (W) VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 600 mA (2) IDq = 800 mA (3) IDq = 1000 mA (4) IDq = 1200 mA (5) IDq = 1400 mA Fig 5. Power gain and drain efficiency as functions of peak envelope load power; typical values Fig 6. Third order intermodulation distortion as a function of peak envelope load power; typical values BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 6 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 7.1.3 Application circuit Table 8. List of components For application circuit, see Figure 7. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component Description C1, C2, C23, C24 C3 C4, C5 C6, C9 C7, C8, C10, C11 C12, C16 C13, C15 C14 C17, C19 C18 C20, C22 C21 L1, L2, L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 R1, R2 R3, R4 T1, T2, T3, T4 [1] Value [1] Remarks multilayer ceramic chip capacitor 100 pF multilayer ceramic chip capacitor 24 pF multilayer ceramic chip capacitor 39 pF multilayer ceramic chip capacitor 4.7 µF multilayer ceramic chip capacitor 1 nF electrolytic capacitor 220 µF; 63 V [1] [1] TDK4532X7R1E475Mt020U [1] multilayer ceramic chip capacitor 62 pF multilayer ceramic chip capacitor 15 pF multilayer ceramic chip capacitor 47 pF multilayer ceramic chip capacitor 33 pF multilayer ceramic chip capacitor 10 pF multilayer ceramic chip capacitor 18 pF 3 turns 1 mm copper wire stripline stripline stripline metal film resistor metal film resistor semi rigid coax D = 3 mm; length = 3 mm 10 Ω; 0.6 W 3 Ω; 0.6 W 50 Ω; 120 mm [1] [1] [1] [1] [1] [1] (L × W) 125 mm × 7 mm (L × W) 8 mm × 15 mm (L × W) 132 mm × 7 mm EZ-141-AL-TP-M17 American Technical Ceramics type 100B or capacitor of same quality. BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 7 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor L1 R3 T1 C6 C7 R1 C10 + T3 C12 L2 C13 C17 C20 C23 C24 C1 C2 C3 C4 C5 L6 L5 L8 L7 L9 L10 C14 C15 L11 L12 C18 C21 C22 C19 L3 R2 C8 C16 T2 C9 C11 R4 L4 + T4 001aaj132 Fig 7. Component layout for class-AB application circuit BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 8 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 7.2 Reliability 105 Years 104 (1) (2) (3) (4) (5) (6) 001aaj133 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 Idc (A) 20 TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 8. BLF574 electromigration (ID, total device) BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 9 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 8. Test information 8.1 Impedance information Table 9. Typical impedance Simulated ZS and ZL test circuit impedances. f MHz 225 ZS Ω 3.2 + j2.5 ZL Ω 7.5 + j4.0 drain ZL gate ZS 001aaf059 Fig 9. Definition of transistor impedance BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 10 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW 001aaj134 001aaj135 30 Gp (dB) 28 ηD 80 ηD (%) 60 30 Gp (dB) 28 (7) (6) (5) Gp 26 40 26 (4) (3) (2) (1) 24 20 24 22 0 100 200 300 0 400 500 PL (W) 22 0 100 200 300 400 500 PL (W) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA Fig 10. Power gain and drain efficiency as functions of load power; typical values Fig 11. Power gain as function of load power; typical values BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 11 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 60 PL (dBm) 58 ideal PL (1) 001aaj136 56 PL 54 52 50 24 26 28 30 32 34 Ps (dBm) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 56.43 dBm (440 W) Fig 12. Load power as function of source power; typical values 8.2.2 2-Tone CW 001aaj137 001aaj138 30 Gp (dB) 28 ηD 80 ηD (%) 60 0 IMD3 (dBc) −20 (1) (2) (3) Gp 26 40 −40 (4) (5) 24 20 −60 22 0 100 200 300 400 500 PL(PEP) (W) 0 600 −80 0 100 200 300 400 500 600 PL(PEP) (W) VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 600 mA (2) IDq = 800 mA (3) IDq = 1000 mA (4) IDq = 1200 mA (5) IDq = 1400 mA Fig 13. Power gain and drain efficiency as functions of peak envelope load power; typical values Fig 14. Third order intermodulation distortion as a function of peak envelope load power; typical values BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 12 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 8.2.3 Test circuit Table 10. List of components For production test circuit, see Figure 15 and Figure 16. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component Description C1, C2, C20, C21 C3 C4, C5 C6, C7, C10, C11 C8, C9 C12, C13 C14, C15 C16 C17 C18, C19 C22 C23, C24 L1, L2, L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 R1, R2 R3, R4 T1, T2, T3, T4 [1] Value 100 pF 24 pF 39 pF 1 nF 4.7 µF 220 µF; 63 V 47 pF 33 pF 18 pF 10 pF 15 pF 62 pF D = 3 mm; length = 2 mm 10 Ω; 0.6 W 3 Ω; 0.6 W 50 Ω; 120 mm [1] [1] [1] [1] [1] [1] [1] Remarks multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor 3 turns 1 mm copper wire stripline stripline stripline metal film resistor metal film resistor semi rigid coax [1] [1] [1] [1] TDK4532X7R1E475Mt020U (L × W) 125 mm × 7 mm (L × W) 8 mm × 15 mm (L × W) 132 mm × 7 mm EZ-141-AL-TP-M17 American Technical Ceramics type 100B or capacitor of same quality. BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 13 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor VDD C12 VGG C8 C7 R3 L3 C11 R2 L1 C14 T1 C1 input 50 Ω C3 T2 C2 L5 L7 L10 C24 C15 L12 C19 C4 C5 L6 L8 L9 C22 L11 C21 T4 C16 C17 C23 C18 C20 T3 output 50 Ω R1 C6 C9 L2 C10 VGG L4 L4 C13 VDD 001aaj139 Fig 15. Class-AB common-source production test circuit L3 R3 T1 C8 C7 R2 L1 C11 C12 C14 C18 C17 T3 C23 C1 C3 C4 C5 C22 C16 C20 11 mm C2 37 mm 11 mm C24 L2 R1 C6 C10 R4 L4 C13 C15 5 mm 3 mm C19 C21 T2 C9 T4 001aaj140 Fig 16. Component layout for class-AB production test circuit BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 14 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 41.28 10.29 0.25 41.02 10.03 0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395 OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 Fig 17. Package outline SOT539A BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 15 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 10. Abbreviations Table 11. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VHF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Time To Failure Very High Frequency Voltage Standing-Wave Ratio 11. Revision history Table 12. BLF574_2 Modifications: BLF574_1 Revision history Release date 20090224 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF574_1 Document ID • Data sheet status updated from Preliminary to Product 20081208 BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 16 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 17 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.1.3 7.2 8 8.1 8.2 8.2.1 8.2.2 8.2.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Impedance information . . . . . . . . . . . . . . . . . . 10 RF performance . . . . . . . . . . . . . . . . . . . . . . . 11 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 February 2009 Document identifier: BLF574_2