BLF888AS

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f (MHz) 2-tone, class-AB pulsed, class-AB [1] PL(AV) (W) 250 110 125 110 120 PL(M) (W) 600 - Gp (dB) 21 20 21 21 20 20 D (%) 46 58 31 32.5 30 31 IMD3 (dBc) 32 - IMDshldr (dBc) 32 [2] PAR (dB) 8.2 [3] 8.0 [3] 8.0 [3] 7.8 [3] RF performance in a common source 860 MHz narrowband test circuit f1 = 860; f2 = 860.1 860 858 858 DVB-T (8k OFDM) 858 858 [1] [2] [3] Measured at  = 10 %; tp = 100 s. Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. DVB-T (8k OFDM) 30 [2] 32 [2] 31 [2] RF performance in a common source 470 MHz to 860 MHz broadband test circuit 1.2 Features and benefits          Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications  Communication transmitter applications in the UHF band  Industrial applications in the UHF band NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline Graphic symbol BLF888A (SOT539A) 1 2 5 3 3 4 4 5 1 2 sym117 BLF888AS (SOT539B) 1 2 3 4 5 drain1 drain2 gate1 gate2 source [1] 1 2 5 1 3 4 3 5 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF888A BLF888AS Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads earless flanged balanced LDMOST ceramic package; 4 leads Version SOT539A SOT539B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min 0.5 65 Max 110 +11 +150 200 Unit V V C C BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 2 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 5. Thermal characteristics Table 5. Rth(j-c) [1] Thermal characteristics Conditions [1] Symbol Parameter Typ Unit thermal resistance from junction to case Tcase = 80 C; PL(AV) = 125 W 0.15 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS RDS(on) Ciss Coss Crss [1] [2] Conditions VGS = 0 V; ID = 2.4 mA VDS = 10 V; ID = 240 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 10 V; VDS = 0 V VGS = VGS(th) + 3.75 V; ID = 8.5 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz [1] [1] [1] Min Typ Max Unit 110 1.4 1.9 36 2.4 2.8 280 V V A A nA m pF pF pF gate-source threshold voltage drain leakage current drain cut-off current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance 143 220 74 1.2 - [2] ID is the drain current. Capacitance values without internal matching. Table 7. RF characteristics RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol VDS IDq PL(AV) Gp D IMD3 Parameter drain-source voltage quiescent drain current average output power power gain drain efficiency third-order intermodulation distortion f1 = 860 MHz; f2 = 860.1 MHz f1 = 860 MHz; f2 = 860.1 MHz f1 = 860 MHz; f2 = 860.1 MHz f1 = 860 MHz; f2 = 860.1 MHz [1] Conditions Min Typ Max Unit 50 1.3 28 V A W dB % dBc 2-Tone, class-AB 250 20 42 21 46 32 BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 3 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor Table 7. RF characteristics …continued RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol VDS IDq PL(AV) Gp D IMDshldr PAR [1] [2] [3] Parameter drain-source voltage quiescent drain current average output power power gain drain efficiency intermodulation distortion shoulder peak-to-average ratio Conditions Min Typ Max Unit [1] DVB-T (8k OFDM), class-AB 50 1.3 21 31 32 8.2 28 V A W dB % dBc dB 110 20 28 [2] [3] f = 858 MHz f = 858 MHz f = 858 MHz f = 858 MHz f = 858 MHz - IDq for total device. Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 400 Coss (pF) 300 001aam579 200 100 0 0 20 40 VDS (V) 60 VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding to VSWR  40 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 4 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 7. Application information 7.1 Narrowband RF figures 7.1.1 2-Tone 001aan761 001aan762 24 Gp (dB) 20 Gp 60 ηD (%) 40 24 Gp (dB) 20 Gp 0 IMD3 (dBc) -20 ηD IMD3 16 20 16 -40 12 0 100 200 300 0 400 500 PL(AV) (W) 12 0 100 200 300 -60 400 500 PL(AV) (W) VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 2. 2-Tone power gain and drain efficiency as function of load power; typical values Fig 3. 2-Tone power gain and third order intermodulation distortion as load power; typical values BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 5 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 7.1.2 DVB-T 001aam582 001aam583 24 Gp (dB) 22 Gp 0 IMDshldr (dBc) −10 −20 12 PAR (dB) 10 PAR 60 ηD (%) 50 20 8 40 18 IMDshldr −30 −40 6 ηD 30 16 4 20 14 −50 −60 350 PL(AV) (W) 300 2 10 12 0 50 100 150 200 250 0 0 50 100 150 200 250 0 350 PL(AV) (W) 300 VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 4. DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values Fig 5. DVB-T peak-to-average ratio and drain efficiency as function of load power; typical values 7.2 Broadband RF figures 7.2.1 DVB-T 001aam585 001aam584 24 Gp (dB) 20 Gp −10 IMDshldr (dBc) −20 9.5 PAR (dB) 8.5 PAR 50 ηD (%) 40 16 IMDshldr −30 7.5 ηD 30 12 −40 6.5 20 8 400 500 600 700 −50 800 900 f (MHz) 5.5 400 500 600 700 10 800 900 f (MHz) PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 6. DVB-T power gain and intermodulation distortion shoulder as a function of frequency; typical values Fig 7. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values © NXP B.V. 2011. All rights reserved. BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 30 August 2011 6 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 7.3 Impedance information drain 1 gate 1 Zi gate 2 drain 2 001aan207 ZL Fig 8. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T). f MHz 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 BLF888A_BLF888AS Zi  0.617  j1.715 0.635  j1.355 0.655  j1.026 0.677  j0.721 0.702  j0.435 0.731  j0.164 0.762 + j0.096 0.798 + j0.347 0.839 + j0.592 0.884 + j0.833 0.936 + j1.072 0.995 + j1.310 1.063 + j1.549 1.141 + j1.791 1.230 + j2.037 1.334 + j2.289 1.456 + j2.548 1.599 + j2.814 1.768 + j3.090 1.971 + j3.376 2.214 + j3.671 2.510 + j3.975 2.873 + j4.282 3.320 + j4.584 3.875 + j4.865 4.562 + j5.095 5.409 + j5.223 6.426 + j5.166 7.587 + j4.807 All information provided in this document is subject to legal disclaimers. ZL  4.989 + j1.365 4.867 + j1.424 4.741 + j1.472 4.614 + j1.511 4.486 + j1.540 4.357 + j1.559 4.228 + j1.570 4.100 + j1.573 4.974 + j1.567 3.850 + j1.554 3.728 + j1.534 3.608 + j1.508 3.492 + j1.475 3.378 + j1.437 3.268 + j1.394 3.161 + j1.347 3.057 + j1.295 2.957 + j1.239 2.860 + j1.180 2.676 + j1.118 2.677 + j1.053 2.591 + j0.985 2.508 + j0.915 2.428 + j0.843 2.351 + j0.770 2.277 + j0.695 2.206 + j0.618 2.138 + j0.540 2.073 + j0.461 © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 7 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 7.4 Reliability 107 Years 106 105 104 103 102 10 1 0 2 4 6 8 10 12 14 16 18 20 IDS(DC) (A) (7) (8) (9) (10) (11) (1) (2) (3) (4) (5) (6) 001aam586 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 9. BLF888A; BLF888AS electromigration (IDS(DC), total device) BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 8 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 10, Figure 11 and Figure 12. Component B1, B2 C1 C2, C3, C4, C5, C6 C7 C8 C9 C10, C13, C14 C11, C12 C15, C16 C17, C18, C23, C24 C19, C20 C21, C22 C30 C31 C32 C33, C34, C35 C36, C37 L1 L2 L3, L32 L4 L5 L30 L31 L33 R1, R2 R3, R4 R5, R6 R7, R8 [1] [2] [3] [4] [5] Description semi rigid coax multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor microstrip microstrip microstrip microstrip microstrip microstrip microstrip microstrip wire resistor SMD resistor wire resistor potentiometer Value 25 ; 49.5 mm 12 pF 8.2 pF 6.8 pF 2.7 pF 2.2 pF 100 pF 10 pF 4.7 F, 50 V 100 pF 10 F, 50 V 470 F; 63 V 10 pF 9.1 pF 3.9 pF 100 pF 4.7 F, 50 V 10  5.6  100  10 k [5] [5] [5] [5] [5] [5] [5] [5] [4] [4] [4] [4] [2] [1] [1] Remarks UT-090C-25 (EZ 90-25) [2] [2] [2] [3] [2] Kemet C1210X475K5RAC-TU or capacitor of same quality. TDK C570X7R1H106KT000N or capacitor of same quality. TDK C4532X7R1E475MT020U or capacitor of same quality. (W  L) 15 mm  13 mm (W  L) 5 mm  26 mm (W  L) 2 mm  49.5 mm (W  L) 1.7 mm 3.5 mm (W  L) 2 mm  9.5 mm (W  L) 5 mm  13 mm (W  L) 2 mm  11 mm (W  L) 2 mm  3 mm 0805 American technical ceramics type 800R or capacitor of same quality. American technical ceramics type 800B or capacitor of same quality. American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. BLF888A_BLF888AS Product data sheet Rev. 3 — 30 August 2011 9 of 17 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 3 — 30 August 2011 10 of 17 BLF888A_BLF888AS NXP Semiconductors +VG1(test) R7 C19 R5 C36 C17 L5 R1 C21 C11 C13 L3 L2 C5 C4 C6 C7 C8 B1 C9 L4 C10 50 Ω C15 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. +VD1(test) C23 R3 C34 L32 L31 C32 B2 C31 L30 C1 C30 L1 C3 C2 50 Ω C33 L33 R4 C37 C35 C12 C14 C16 C22 C24 BLF888A; BLF888AS R6 C18 R2 +VD2(test) C20 R8 UHF power LDMOS transistor +VG2(test) 001aan763 See Table 9 for a list of components. Fig 10. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor L32 L5 L30 L3 L1 L31 L31 L1 L2 L4 L2 50 mm L33 L30 L5 L32 L3 105 mm 001aam588 See Table 9 for a list of components. Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier 49.6 mm 44 mm +VG1(test) R1 C19 +VD1(test) + C23 R5 C36 R7 C17 C21 C11 R3 C34 C33 50 Ω C35 C32 C30 C31 C2 C4 C6 C1 C3 C5 C10 C7 C9 C13 C15 50 Ω C8 C12 C14 C16 4 mm R4 C22 C37 R6 R8 C18 C20 R2 C24 + +VG2(test) 6.3 mm +VD2(test) 25.3 mm 26.3 mm 36.8 mm 001aan764 See Table 9 for a list of components. Fig 12. Component layout for class-AB common source amplifier BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 11 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.7 4.2 b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.26 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 41.28 10.29 0.25 41.02 10.03 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 Fig 13. Package outline SOT539A BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 12 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor Earless flanged balanced LDMOST ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 1 2 w2 D c H U2 E1 E L 3 4 b e w3 Q 0 5 scale 10 mm Dimensions Unit(1) mm max nom min A 4.7 4.2 b 11.81 11.56 c D D1 E 9.5 9.3 E1 9.53 13.72 0.10 30.94 30.96 9.27 1.50 16.10 25.27 2.97 2.01 32.13 10.03 0.01 e F H H1 L Q U1 U2 w2 0.25 w3 0.25 0.18 31.55 31.52 1.75 17.12 25.53 3.48 2.26 32.77 10.29 mm max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 nom 0.54 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version SOT539B References IEC JEDEC JEITA European projection sot539b_po Issue date 10-02-02 11-02-17 Fig 14. Package outline SOT539B BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 13 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Acronym CCDF DVB DVB-T LDMOS LDMOST OFDM PAR RF SMD UHF VSWR Abbreviations Description Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Peak-to-Average power Ratio Radio Frequency Surface Mounted Device Ultra High Frequency Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Release date 20110830 Data sheet status Product data sheet Change notice Supersedes BLF888A_BLF888AS v.2 Document ID BLF888A_BLF888AS v.3 Modifications: • • The status of this document has been changed to Product data sheet. Table 7 on page 3: The values in the Conditions column for VDS and IDq have been removed. Preliminary data sheet Objective data sheet BLF888A_BLF888AS v.1 - BLF888A_BLF888AS v.2 BLF888A_BLF888AS v.1 20110301 20100921 BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 14 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2011. All rights reserved. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 30 August 2011 15 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 13.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 13.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 16 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.2 7.2.1 7.3 7.4 8 9 10 11 12 13 13.1 13.2 13.3 13.4 13.5 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Impedance information . . . . . . . . . . . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 August 2011 Document identifier: BLF888A_BLF888AS