BLF900-110

DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Product specification Supersedes data of 2003 Sep 22 2004 Feb 04 Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz and IDQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 24 W (AV) – Gain = 15 dB – Efficiency = 27% – ACPR = −45 dBc at 750 kHz and BW = 30 kHz. • 110 W CW performance • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION BLF900-110; BLF900S-110 APPLICATIONS • RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 110 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION handbook, halfpage 1 1 3 2 Top view MBK394 MBL105 2 Top view 3 Leads are gold-plated. Fig.1 Simplified outline SOT502A (BLF900-110). Fig.2 Simplified outline SOT502B (BLF900S-110). QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB CDMA (IS95) f (MHz) f1 = 890.0; f2 = 890.1 881.5 VDS (V) 27 27 PL (W) 100 (PEP) 24 (AV) Gp (dB) 17 15 ηD (%) 38 27 d3 (dBc) −33 − ACPR 750 (dBc) − −45 2004 Feb 04 2 Philips Semiconductors Product specification Base station LDMOS transistors ORDERING INFORMATION TYPE NUMBER BLF900-110 BLF900S-110 BLF900-110; BLF900S-110 PACKAGE NAME − − DESCRIPTION Flanged LDMOST ceramic package; 2 mounting holes; 2 leads Earless flanged LDMOST ceramic package; 2 leads VERSION SOT502A SOT502B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Tstg Tj drain-source voltage gate-source voltage storage temperature junction temperature PARAMETER − − −65 − MIN. MAX. 75 ±15 +150 200 V V °C °C UNIT THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 250 mA VGS = 0; VDS = 28 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 20 V; ID = 7.5 A VGS = VGSth + 9 V; ID = 9 A MIN. 75 4.5 − 31 − − − TYP. − − − − − 7 90 MAX. − 5.5 3 − 0.5 − − UNIT V V µA A µA S mΩ PARAMETER thermal resistance from junction to case CONDITIONS Th = 25 °C, PL = 160 W (AV), note 1 VALUE 0.9 UNIT K/W 2004 Feb 04 3 Philips Semiconductors Product specification Base station LDMOS transistors APPLICATION INFORMATION BLF900-110; BLF900S-110 RF performance in a common source class-AB circuit. VDS = 27 V; f = 890 MHz; Th = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. − −