BLV93

DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. FEATURES BLV93 • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • internal input matching to achieve an optimum wideband capability and high power gain • gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a common-emitter class-B test circuit MODE OF OPERATION VCE V 12,5 9,6 f MHz 900 900 PL W 8 6 > typ. Gp dB 6,5 6,0 > typ. ηC % 50 59 narrow band; c.w. PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol. Top view 1 3 5 MAM141 handbook, halfpage 2 4 6 c b e WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 67 °C at Tmb = 67 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot(dc) Ptot(rf) Tstg Tj max. max. max. IC; IC AV ICM max. max. VCBOM VCEO VEBO max. max. max. BLV93 36 V 16 V 3V 1,6 A 4,8 A 18 W 24 W 200 °C −65 to +150 °C handbook, halfpage 10 MDA422 handbook, halfpage 40 MDA423 Ptot IC (A) Th = 60 °C 1 (W) 32 III 24 II 16 I 8 10−1 1 10 VCE (V) 102 0 0 50 100 150 Th (°C) 200 Rth mb-h = 0,4 K/W I Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz) Fig.2 D.C. SOAR. Fig.3 Power/temperature derating curves. THERMAL RESISTANCE Dissipation = 12 W; Tmb = 112 °C From junction to mounting base (d.c. dissipation) (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h max. max. max. 7,0 K/W 5,2 K/W 0,4 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 20 mA Collector-emitter breakdown voltage open base; IC = 40 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 1,2 A; VCE = 10 V Transition frequency at f = 500 −IE = 1,2 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp = 50 µs; δ < 1%. Cre Ccf typ. typ. Cc typ. MHz(1) fT typ. hFE > ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO > BLV93 36 V 16 V 3V 10 mA 2 mJ 25 4 GHz 15 pF 9 pF 2 pF handbook, halfpage 100 MDA424 handbook, halfpage 5 MDA425 hFE 12.5 V 80 VCE = 10 V 60 fT (GHz) 4 3 40 2 20 1 0 0 1 2 3 IC (A) 4 0 0 −0.8 −1.6 −2.4 −3.2 IE (A) −4 Fig.4 Tj = 25 °C; typical values. Fig.5 VCB = 12,5 V; f = 500 MHz; Tj = 25 °C; typical values. March 1993 4 Philips Semiconductors Product specification UHF power transistor BLV93 handbook, halfpage 26 MDA426 Cc (pF) 22 18 14 10 0 4 8 12 16 20 VCB (V) Fig.6 IE = ie = 0; f = 1 MHz; typical values. APPLICATION INFORMATION R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; Th = 25 °C. MODE OF OPERATION VCE V 12,5 9,6 PL W 8 6 < typ. typ. PS W 1,8 1,5 1,5 > typ. typ. Gp dB 6,5 7,3 6,0 < typ. typ. IC A 1,28 1,1 1,05 > typ. typ. ηC % 50 58 59 narrow band; c.w. March 1993 5 Philips Semiconductors Product specification UHF power transistor BLV93 handbook, full pagewidth C1 50 Ω ,,,,,, ,,,,,,, ,,,,,, ,,,,,,, C5 T.U.T. C6 C8 L1 L2 L3 L4 L5 L6 L7 C2 C3 C4 C7 C9 C10 L8 L9 C13 L11 R1 L10 R2 C14 C12 50 Ω C11 +VCC C15 MBK458 Fig.7 Class-B test circuit at f = 900 MHz. List of components: C1 C2 C4 C6 C8 = C12 = 33 pF multilayer ceramic chip capacitor = C3 = C10 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) = C5 = 4,7 pF multilayer ceramic chip capacitor(1) = C7 = 5,6 pF multilayer ceramic chip capacitor(1) = C9 = 3,3 pF multilayer ceramic chip capacitor(1) C13 = 10 pF ceramic feed-through capacitor C14 = 6,8 µF (63 V) electrolytic capacitor C15 = 330 pF ceramic feed-through capacitor L1 L2 L3 L4 L5 L6 L8 L9 L10 R1 = L7 = 50 Ω stripline (29,0 × 2,4 mm) = 50 Ω stripline (6,0 mm × 2,4 mm) = 42,7 Ω stripline (13,1 mm × 3,0 mm) = 42,7 Ω stripline (4,4 mm × 3,0 mm) = 42,7 Ω stripline (4,6 mm × 3,0 mm) = 50 Ω stripline (11,0 × 2,4 mm) = 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2 × 5 mm = 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia 4 mm; leads 2 × 5 mm = L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) = R2 = 10 Ω ± 10%; 0,25 W, metal film resistor L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,2); thickness 1⁄32 inch. Note 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. March 1993 6 Philips Semiconductors Product specification UHF power transistor BLV93 handbook, full pagewidth 124 mm copper straps 80 mm +VCC C15 L10 R1 L8 C5 C1 L1 C3 L2 C3 C4 L3 C7 L5 L4 C6 L6 C9 C10 C14 R2 L11 L9 C8 C13 C12 L7 C11 MBK459 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane. Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLV93 handbook, halfpage 10 PL MDA427 handbook, halfpage 8 MDA428 80 Gp ηC (%) 60 ηC (W) 8 Gp (dB) 6 6 4 4 2 2 20 40 0 0 1 2 3 PS (W) 4 0 0 2 4 6 8 PL (W) 0 10 VCE = 9,6 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. VCE = 9,6 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. Fig.9 Load power vs. source power. Fig.10 Power gain and efficiency vs. load power. handbook, halfpage 16 MDA429 handbook, halfpage PL (W) 12 10 Gp MDA430 (dB) 8 100 ηC (%) 80 6 8 4 4 2 Gp ηC 60 40 20 0 0 1 2 3 PS (W) 4 0 0 4 8 12 16 PL (W) 20 0 VCE = 12,5 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. VCE = 12,5 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. Fig.11 Load power vs. source power. Fig.12 Power gain and efficiency vs. load power. March 1993 8 Philips Semiconductors Product specification UHF power transistor RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and at Th = 25 °C. BLV93 handbook, halfpage 5 MDA431 Zi (Ω) 4 ri 3 2 xi 1 0 800 840 880 920 960 1000 f (MHz) VCE = 12,5 V; PL = 8 W; f = 800-960 MHz; Th = 25 °C; class-B operation; typical values. Fig.13 Input impedance (series components). handbook, halfpage 8 MDA432 handbook, halfpage ZL (Ω) 6 RL 4 10 Gp 8 MDA433 (dB) 6 2 4 0 XL 2 −2 800 840 880 920 960 1000 f (MHz) 0 800 850 900 950 f (MHz) 1000 VCE = 12,5 V; PL = 8 W; f = 800-960 MHz; Th = 25 °C; class-B operation; typical values. VCE = 12,5 V; PL = 8 W; f = 800-960 MHz; Th = 25 °C; class-B operation; typical values. Fig.14 Load impedance (series components). Fig.15 Power gain vs. frequency. March 1993 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads BLV93 SOT171A D A F D1 U1 q H1 b1 C w2 M C B c 2 4 6 H U2 E1 E A 1 3 5 b e p w3 M w1 M A B Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01 3.05 11.31 9.27 2.54 10.54 9.01 4.32 24.90 6.00 18.42 4.11 24.63 5.70 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 OUTLINE VERSION SOT171A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 March 1993 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLV93 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11