BLV950

DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor FEATURES • Internal input and output matching for easy matching, high gain and efficiency • Poly-silicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base station transmitters in the 800 to 960 MHz range. DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transistors. PINNING - SOT262A2 PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e BLV950 DESCRIPTION collector 1 collector 2 base 1 base 2 common emitter; connected to flange handbook, halfpage c1 1 2 b1 e 5 3 Top view 5 4 b2 MAM031 c2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 960 900 960 VCE (V) 26 26 26 26 PL (W) 150 150 150 (PEP) 150 (PEP) Gp (dB) ≥8 ≥7.5 ≥8.5 ≥8 ηC (%) ≥45 ≥45 ≥35 ≥35 d3 (dBc) − − ≤−30 ≤−30 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Oct 27 2 Philips Semiconductors Product specification UHF push-pull power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor section VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation (DC) storage temperature operating junction temperature Tmb = 25 °C open emitter open base open collector − − − − − − −65 − 70 30 3 12 12 340 PARAMETER CONDITIONS MIN. BLV950 MAX. UNIT V V V A A W °C °C +150 200 THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Total device; both sections equally loaded; thermal resistance is determined under specified RF operating conditions. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 340 W; Tmb = 25 °C; note 1 MAX. 0.52 0.15 UNIT K/W K/W 1997 Oct 27 3 Philips Semiconductors Product specification UHF push-pull power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per transistor section V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.01. 2. Value Cc is that of the die only, it is not measurable because of internal matching network. collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance open emitter; IC = 60 mA open base; IC = 150 mA open collector; IE = 3 mA VBE = 0; VCE = 28 V VCE = 10 V; IC = 4.5 A; note 1 VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2 70 30 3 − 30 − − − − − − 75 − − − 5 PARAMETER CONDITIONS MIN. TYP. BLV950 MAX. UNIT V V V mA pF 120 − handbook, halfpage 80 MLD256 handbook, halfpage 300 MLD257 h FE 60 (1) Cc (pF) 200 (2) 40 100 20 0 0 4 8 12 I C (A) 16 0 0 10 20 30 40 50 VCB (V) Measured under pulsed conditions; tp ≤ 300 µs; δ ≤ 0.01. (1) VCE = 26 V. (2) VCE = 10 V. Value Cc is that of the die only, it is not measurable because of internal matching network. IE = ie = 0; f = 1 MHz. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Collector capacitance as a function of collector-base voltage; typical values. 1997 Oct 27 4 Philips Semiconductors Product specification UHF push-pull power transistor APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.15 K/W. MODE OF OPERATION CW, class-AB f (MHz) 900 960 2-tone, class-AB note 1 note 2 Notes 1. f1 = 900.0 MHz; f2 = 900.1 MHz. 2. f1 = 960.0 MHz; f2 = 960.1 MHz. Ruggedness in class-AB operation VCE (V) 26 26 26 26 ICQ (mA) 2 × 100 2 × 100 2 × 100 2 × 100 PL (W) 150 150 150 (PEP) 150 (PEP) Gp (dB) ≥8 typ. 9 ≥7.5 typ. 8.5 ≥8.5 typ. 9.5 ≥8 typ. 9 ηC (%) ≥45 typ. 50 ≥45 typ. 50 ≥35 typ. 40 ≥35 typ. 40 BLV950 d3 (dBc) − − ≤−28 typ. −31 ≤−30 typ. −33 The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the conditions: PL = 150 W; f = 960 MHz; VCE = 26 V; ICQ = 2 × 100 mA; Th = 25 °C; Rth mb-h = 0.15 K/W and also a load mismatch of VSWR = 5 : 1 through all phases at PL = 150 W (PEP) and f1 = 960.0 MHz and f2 = 960.1 MHz. handbook, halfpage 12 MLD258 MLD259 60 ηC (%) 40 handbook, halfpage 200 Gp (dB) 8 Gp ηC PL (W) 150 100 4 20 50 0 0 50 100 150 P L (W) 0 200 0 0 10 20 P i (W) 30 VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz. VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz. Fig.4 Power gain and efficiency as functions of load power; typical values. Fig.5 Load power as a function of input power; typical values. 1997 Oct 27 5 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 handbook, halfpage 12 MLD260 60 ηC (%) Gp 40 MLD261 handbook, halfpage Gp (dB) 8 200 PL (PEP) (W) 150 100 ηC 4 20 50 0 0 50 100 0 150 200 P L (PEP) (W) 0 0 10 20 Pi (PEP) (W) 30 VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz. VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz. Fig.6 Power gain and efficiency as functions of load power; typical values. Fig.7 Load power as a function of input power; typical values. handbook, halfpage 25 MLD262 d im (dBc) 30 d3 35 d5 40 d7 45 0 50 100 150 200 P L (PEP) (W) VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz. Fig.8 Intermodulation distortion as a function of load power; typical values. 1997 Oct 27 6 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 handbook, full pagewidth C2 V bias R5 C1 L8 C3 C5 C7 C9 C32 L14 C31 VS R1 C4 C6 C8 L9 C35 C33 R3 C30 C29 input 50 Ω ,,,,, ,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, L10 L6 L1 L2 C19 L4 C21 C22 C23 L3 C20 L5 L7 L11 L12 C10 R2 R6 C13 C15 C17 C11 L13 C12 C14 C16 C18 L16 DUT L17 ,,,, ,,,,,,, ,,,, ,,,,,,, ,,,, ,,,, C34 L15 L20 L22 L24 L26 C27 L28 L29 C24 C25 C26 C28 L30 L25 L27 L21 L23 L18 C37 C38 R4 C41 C42 VS L19 C40 MLD263 output 50 Ω C36 C39 V bias Fig.9 Class-AB test circuit at 900 to 960 MHz. 1997 Oct 27 7 Philips Semiconductors Product specification UHF push-pull power transistor List of components (see Figs 9 and 10) COMPONENT C1, C10 C2, C11, C30, C34, C37, C41 C3, C12 C4, C13 C5, C14, C31, C40 C6, C15, C29, C42 C7, C16 C8, C17 C9, C18, C19, C20, C35, C36 C23 C25 C21, C22 C24, C26 C27, C28 C32, C39 C33, C38 L1, L3 L2 DESCRIPTION tantalum capacitor multilayer ceramic chip capacitor; note 1 electrolytic capacitor electrolytic capacitor tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor electrolytic capacitor stripline; note 2 semi-rigid cable; note 3 VALUE 2.2 µF, 35 V 300 pF, 200 V 1 µF, 63 V 10 µF, 16 V 1 µF, 35 V 100 nF, 50 V 10 nF, 50 V 330 pF, 200 V 39 pF, 500 V 2 pF, 500 V 3.9 pF, 500 V 9 pF 3.5 pF 68 pF, 500 V 10 µF, 63 V 1 µF, 63 V 35 Ω 50 Ω length 50.7 mm width 4 mm ext. conductor length 50.7 mm ext. diameter 2.2 mm length 26.5 mm width 4 mm length 9.2 mm width 8 mm length 2.5 mm width 27 mm DIMENSIONS BLV950 CATALOGUE No. 2022 019 00058 2222 085 78108 2222 085 75109 2022 019 00056 2222 581 76641 2222 581 76627 2222 809 09005 2222 809 05215 2222 030 28109 2222 030 38108 L4, L5 L6, L7 L10, L11, L16, L17 L8, L13, L14, L19 L9, L12 L15, L18 L20, L21 stripline; note 2 stripline; note 2 stripline; note 2 grade 4S2 Ferroxcube chip-bead microchoke 4 turns enamelled 1 mm copper wire stripline; note 2 35 Ω 20 Ω 7Ω 4330 030 36300 4.7 µH 100 nH 14 Ω int. diameter 6 mm close wound length 6 mm width 12.5 mm 4322 057 04781 1997 Oct 27 8 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 COMPONENT L22, L23 L24, L25 L26, L27 L28, L30 L29 DESCRIPTION stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 semi-rigid cable; note 3 14 Ω 18 Ω 50 Ω 30 Ω 50 Ω VALUE DIMENSIONS length 7 mm width 12.5 mm length 11 mm width 9 mm length 6.5 mm width 2.5 mm length 49.3 mm width 5 mm ext. conductor length 49.3 mm ext. diameter 3.6 mm CATALOGUE No. R5, R6 R1, R2 R3, R4 Notes metal film resistor metal film resistor metal resistor 0.4 W, 1 Ω 0.4 W, 5.11 Ω 1 W, 5.11 Ω 2322 151 71008 2322 151 75118 2322 153 75118 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr = 2.2); thickness 1⁄32"; thickness of the copper sheet 2 × 35 µm. 3. Semi-rigid cables soldered respectively on striplines L1 and L28. 1997 Oct 27 9 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 handbook, full pagewidth 64.5 68.5 85 85 C2 V bias C1 R5 L3 C3 C5 C7 R1 L8 C8 C4 C6 C9 L9 C35 L15 L16 C33 C32 L14 C31 C34 R3 L29 L24 C25 C24 C26 L27 C28 L25 L21 L23 L17 L18 C36 C37 R4 C38 C39 MLD264 C30 C29 V S L28 L10 L6 C19 L4 C21 C20 L5 C22 L7 C23 L20 L22 L26C27 L1 L2 V bias R6 C10 L11 L13 C13 C15 L12 C17 R2 C18 C11 C12 C14 C16 L30 L19 C41 C40 C42 VS Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.10 Component layout and printed-circuit board for 900 to 960 MHz class-AB test circuit. 1997 Oct 27 10 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 MLD265 - 1 MLD266 - 1 handbook, halfpage 8 handbook, halfpage 4 Zi (Ω) 6 ri ZL (Ω) 2 RL 4 0 2 xi XL −2 0 −2 840 880 920 960 1000 f (MHz) −4 840 880 920 960 1000 f (MHz) VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. Fig.11 Input impedance as a function of frequency (series components); typical values per section. Fig.12 Load impedance as a function of frequency (series components); typical values per section. handbook, halfpage 12 MLD267 Gp (dB) 8 handbook, halfpage 4 Zi ZL MBA451 0 840 880 920 960 f (MHz) 1000 VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. Fig.13 Power gain as a function of frequency; typical values. Fig.14 Definition of transistor impedance. 1997 Oct 27 11 Philips Semiconductors Product specification UHF push-pull power transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads BLV950 SOT262A2 D A F U1 q H1 C w2 M C B c 1 2 H U2 p E1 w1 M A B E 5 A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.39 4.62 0.212 0.182 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2,47 2.20 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01 21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.395 0.396 0.230 0.006 0.220 0.004 0.097 1.100 0.087 OUTLINE VERSION SOT262A2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 1997 Oct 27 12 Philips Semiconductors Product specification UHF push-pull power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLV950 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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