BLV98CE

DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain • Implanted ballasting resistors an for optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV98CE NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB circuit. MODE OF OPERATION c.w. class-AB PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION handbook, halfpage f (MHz) 960 VCE (V) 24 PL (W) 15 GP (dB) > 7.5 ηc (%) > 50 emitter emitter base collector emitter emitter Top view 2 4 6 c b 1 3 5 MAM141 e Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector base voltage collector emitter voltage emitter base voltage collector current collector current total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector DC or average peak value f > 1 MHz f > 1 MHz Tmb = 25 °C MIN. − − − − − − −65 − BLV98CE MAX. 50 27 3.5 1.5 4.5 40 150 200 V V V A A W UNIT °C °C THERMAL RESISTANCE SYMBOL Rthj-mb Rth mb-h PARAMETER from junction to mounting base (RF) from mounting base to heatsink CONDITIONS TYP. − − MAX. 4.4 0.4 UNIT K/W K/W handbook, halfpage 10 MDA449 handbook, halfpage 60 MDA450 IC (A) Tmb = 25 °C 1 Th = 70 °C Ptot (W) 40 (2) (1) 20 10−1 1 10 VCE (V) 102 0 0 40 80 120 Th (°C) 160 (1) DC or RF operation (2) short-term operation during mismatch Fig.2 DC SOAR. Fig.3 Power/temperature derating. March 1993 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS at Tj = 25 °C unless otherwise stated. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Ccf PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance at f = 1 MHz feedback capacitance at f = 1 MHz collector-flange capacitance CONDITIONS open emitter IC = 25 mA open base IC = 50 mA open collector IE = 5 mA VBE = 0 VCE = 27 V IC = 1 A VCE = 20 V IE = Ie = 0 VCB = 24 V IC = 0 VCE = 24 V MIN. 50 27 3.5 − 15 − − − TYP. − − − − − 23 14 2 BLV98CE MAX. − − − 5 − − − − V V V UNIT mA pF pF pF handbook, halfpage 100 MDA451 handbook, halfpage hFE 80 100 Cc MDA452 VCE = 24 V (pF) 80 20 V 60 60 40 40 20 20 0 0 1 2 3 IC (A) 4 0 0 10 20 VCB (V) 30 Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Output capacitance as a function of VCB; typical values. March 1993 4 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance in a common emitter test circuit. Th = 25 °C, Rth mb-h = 0.4 K/W unless otherwise specified. MODE OF OPERATION c.w. class-AB f (MHz) 960 VCE (V) 24 IC(ZS) (mA) 30 PL (W) 15 GP (dB) > 7.5 typ. 8.5 BLV98CE ηc (%) > 50 typ. 55 handbook, halfpage 10 Gp MDA453 (dB) 8 Gp 100 η (%) 80 handbook, halfpage 30 MDA454 PL (W) 20 6 η 60 4 40 10 2 20 0 0 5 10 15 20 PL (W) 25 0 0 0 2 4 6 PS (W) 8 Fig.6 Power gain and efficiency as a function of load power; typical values. Fig.7 Load power as a function of input power; typical values. Ruggedness in class-AB operation The BLV98CE is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VCE = 24 V, IC(ZS) = 30 mA, f = 960 MHz at rated output power. March 1993 5 Philips Semiconductors Product specification UHF power transistor BLV98CE handbook, full pagewidth R1 VB C7 L6 L5 C6 C8 R2 L8 L7 C9 C10 VCC 50 Ω input C1 ,,,,,, ,,,,,, ,,,,,, ,,,,,, L1 L2 L3 C5 L4 D.U.T. C11 L9 C14 L10 L11 L12 L13 C2 C3 C4 C12 C13 C15 C16 C17 50 Ω output MDA455 Fig.8 Test circuit BLV98CE class-AB. March 1993 6 Philips Semiconductors Product specification UHF power transistor List of components (Fig.8) DESIGNATION C1, C6, C7, C8,C17 C2, C3, C15, C16 C4, C5 C9 C10 C11, C12 C13, C14 L1, L13 L2, L12 L3 L4 L5 DESCRIPTION multilayer ceramic chip capacitor film dielectric trimmer multilayer ceramic chip capacitor note 1 35 V solid aluminium capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor note 2 microstrip note 3 microstrip note 3 microstrip note 3 microstrip note 3 3 turns enamelled 0.8 mm copper wire VALUE 330 pF 1.4 to 5.5 pF 4.3 pF 2.2 µF 3 × 100 nF in parallel 5.6 pF 5.1 pF 50 Ω 50 Ω 50 Ω 43 Ω 9.0 × 2.4 mm 23.0 × 2.4 mm 16.0 × 2.4 mm 3.0 × 3.0 mm int. dia. 3 mm length 5 mm leads 2 × 5 mm DIMENSIONS BLV98CE CATALOGUE NO. 2222 809 09001 2222 128 50228 L6, L8 L7 grade 3B ferroxcube wide-band RF choke 4 turns enamelled 0.8 mm copper wire int. dia. 4 mm length 5 mm leads 2 × 5 mm 43 Ω 43 Ω 50 Ω 10 Ω 3.5 × 3.0 mm 11.0 × 3.0 mm 4.5 × 2.4 mm 4312 020 36642 L9 L10 L11 R1, R2 Notes microstrip note 3 microstrip note 3 microstrip note 3 0.4 W metal film resistor 2322 151 71009 1. ATC capacitor type 100A or capacitor of the same quality. 2. ATC capacitor type 100B or capacitor of the same quality. 3. The microstrips are on a double copper-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLV98CE handbook, full pagewidth 122 mm copper straps copper straps rivets rivets 70 mm rivets M2 rivets copper straps M3 copper straps C7 L6 L8 R1 C6 L5 C4 C11 L4 L9 C5 L11 L10 C12 C13 C15 C16 L12 L13 C17 C8 R2 L7 C10 C9 C1 L1 L2 L3 C3 C3 MDA456 The circuit and components are located on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters, to provide a direct contact between the component side and the ground plane. Fig.9 Printed circuit board and component layout for 960 MHz test circuit. March 1993 8 Philips Semiconductors Product specification UHF power transistor BLV98CE handbook, halfpage 6 MDA457 handbook, halfpage 6 MDA458 Zi (Ω) 4 xi (Ω) 4 ZL XL ri 2 2 RL 0 800 850 900 950 f (MHz) 1000 0 800 850 900 950 f (MHz) 1000 Fig.10 Input impedance; series components; VCE = 24 V; PL = 15 W; Rth mb-h = 0.4 K/W; typical values. Fig.11 Load impedance; series components; VCE = 24 V; PL = 15 W; Rth mb-h = 0.4 K/W; typical values. handbook, halfpage 10 Gp 8 MDA459 (dB) 6 4 2 0 800 850 900 950 f (MHz) 1000 Fig.12 Power gain; class-AB operation; VCE = 24 V; PL = 15 W; Rth mb-h = 0.4 K/W; typical values. March 1993 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads BLV98CE SOT171A D A F D1 U1 q H1 b1 C w2 M C B c 2 4 6 H U2 E1 E A 1 3 5 b e p w3 M w1 M A B Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01 3.05 11.31 9.27 2.54 10.54 9.01 4.32 24.90 6.00 18.42 4.11 24.63 5.70 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 OUTLINE VERSION SOT171A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 March 1993 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLV98CE This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11