BLW60C

DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. BLW60C QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCC V 12,5 f MHz 175 PL W 45 GL dB > 5,0 η % > 75 typ. 35 zi Ω 1,2 + j1,4 − ZL Ω 2,6 − j1,2 − d3 dB − typ. −33 12,5 1,6-28 3-30 (P.E.P.) typ. 19,5 PIN CONFIGURATION PINNING - SOT120A. PIN DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 2 3 1 3 4 2 MSB056 Fig.1 Simplified outline. SOT120A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. −65 to + max. BLW60C 36 V 16 V 4V 9A 22 A 100 W 150 °C 200 °C 102 handbook, halfpage MGP479 handbook, halfpage 150 MGP480 IC (A) Prf (W) 100 ΙΙΙ 10 Th = 70 °C Tmb = 25 °C ΙΙ 50 Ι derate by 0.52 W/K 0.38 W/K 1 1 10 VCE (V) 102 0 0 50 Th (°C) 100 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > MHz. THERMAL RESISTANCE (dissipation = 40 W; Tmb = 88 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,8 K/W 2,05 K/W 0,45 K/W March 1993 3 Philips Semiconductors Product specification VHF power transistor CHARACTERISTICS Tj = 25 °C Breakdown voltage Collector-emitter voltage VBE = 0; IC = 50 mA Collector-emitter voltage open base; IC = 100 mA Emitter-base voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 15 V Transient energy L = 25 mH; f = 50 Hz open base −VBE = 1,5 V; RBE = 33 Ω D.C. current gain (1) BLW60C V(BR)CES V(BR)CEO V(BR)EBO ICES > > > < 36 V 16 V 4V 25 mA E E > > 8 ms 8 ms IC = 4 A; VCE = 5 V D.C. current gain ratio of matched devices IC = 4 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 12,5 A; IB = 2,5 A Transition frequency at f = 100 MHz IC = 4 A; VCE = 12,5 V IC = 12,5 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 200 mA; VCE = 15 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. (1) (1) hFE typ 10 to < 50 80 hFE1/hFE2 1,2 VCEsat typ 1,5 V fT fT typ typ 650 MHz 600 MHz Cc typ < 120 pF 160 pF Cre Ccs typ typ 80 pF 2 pF March 1993 4 Philips Semiconductors Product specification VHF power transistor BLW60C MGP481 MGP482 handbook, halfpage 75 typical values Tj = 25 °C VCE = 12.5 V handbook, halfpage 300 hFE 5V Cc (pF) 200 typ IE = Ie = 0 f = 1 MHz 50 25 100 0 0 5 10 IC (A) 15 0 0 10 VCB (V) 20 Fig.4 DC current gain as a function of collector current. Fig.5 Collector capacitance as a function of collector-base voltage. handbook, full pagewidth 750 MGP483 fT (MHz) VCE = 12.5 V 10 V typical values f = 100 MHz Tj = 25 °C 500 5V 250 0 0 5 10 15 IC (A) 20 Fig.6 Transition frequency as a function of collector current. March 1993 5 Philips Semiconductors Product specification VHF power transistor APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C f (MHz) 175 175 VCC (V) 12,5 13,5 PL (W) 45 45 PS (W) < 14,2 − Gp (dB) > 5,0 typ. 6,0 IC (A) < 4,8 − η (%) > 75 typ. 75 zi (Ω) 1,2 + j1,4 − BLW60C ZL (Ω) 2,6 − j1,2 − Test circuit for 175 MHz handbook, full pagewidth C6a C3a C1 50 Ω C2 L1 L4 C3b C4 C5 R2 T.U.T. L6 L2 C6b C8 L5 L7 C7 50 Ω R1 L3 L8 +VCC MGP484 Fig.7 Class-B test circuit at f = 175 MHz. List of components: C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω (±10%) carbon resistor R2 = 4,7 Ω (±5%) carbon resistor Component layout and printed-circuit board for 175 MHz test circuit: Fig.8. March 1993 6 Philips Semiconductors Product specification VHF power transistor BLW60C 150 handbook, full pagewidth 72 1888MJK L3 C4 R1 L2 C1 C2 L1 C3a L4 L5 L6 L8 +VCC C5 R2 C6a C7 C8 L7 C6b C3b 1888MJK rivet MGP485 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. Fig.8 Component layout and printed-circuit board for 175 MHz class-B test circuit. March 1993 7 Philips Semiconductors Product specification VHF power transistor BLW60C MGP486 MGP487 handbook, halfpage typical values 100 PL (W) 75 f = 175 MHz VCC = 12.5 V VCC = 13.5 V handbook, halfpage 10 typical values f = 175 MHz Th = 25 °C η VCC = 12.5 V VCC = 13.5 V 100 Th = 25 °C Gp (dB) Gp η (%) 50 Th = 70 °C 5 50 25 0 0 10 20 PS (W) 30 0 10 30 PL (W) 50 0 Fig.9 Fig.10 Conditions for R.F. SOAR f = 175 MHz Th = 70 °C Rth mb-h = 0,45 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. MGP488 handbook, halfpage 50 PLnom (W) VSWR = 1 VSWR = 5 40 10 20 50 PS PSnom 1 1.1 1.2 VCC VCCnom 1.3 30 Fig.11 March 1993 8 Philips Semiconductors Product specification VHF power transistor BLW60C MGP489 MGP490 handbook, halfpage 2 ri handbook, halfpage 4 ri, xi (Ω) xi 0 RL, XL (Ω) RL 2 −2 0 XL −4 0 100 f (MHz) 200 −2 0 100 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 °C. Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 °C. Fig.12 Input impedance (series components). Fig.13 Load impedance (series components). MGP491 handbook, halfpage 20 Gp (dB) 10 0 0 100 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 °C. Fig.14 March 1993 9 Philips Semiconductors Product specification VHF power transistor R.F. performance in s.s.b. class-AB operation VCE = 12,5 V; Th up to 25 °C; Rth mb-h ≤ 0,45 K/W f1 = 28,000 MHz; f2 = 28,001 MHz BLW60C OUTPUT POWER W 3 to 30 (P.E.P.) Note Gp dB typ 19,5 ηdt % typ 35 d3 dB (1) typ −33 d5 dB (1) typ −36 IC(ZS) mA 25 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. handbook, full pagewidth C10 C1 L4 L1 T.U.T. C11 C2 C3 C4 L2 R1 C6 L3 C12 C13 C14 RL = 50 Ω RS = 50 Ω C5 +VB = 12.5 V R3 R5 C8 TR2 C16 TR1 R6 R4 C15 bias C9 R2 L5 +VB = 12.5 V MGP492 C7 Fig.15 S.S.B. class-AB test circuit. March 1993 10 Philips Semiconductors Product specification VHF power transistor List of components: TR1 = TR2 = BD137 C1 = 100 pF air dielectric trimmer (single insulated rotor type) C2 = 27 pF ceramic capacitor C3 = 180 pF ceramic capacitor C4 = 100 pF air dielectric trimmer (single non-insulated rotor type) C5 = C7 = 3,9 nF polyester capacitor C6 = 2 × 270 pF polystyrene capacitors in parallel C8 = C15 = C16 = 100 nF polyester capacitor C9 = 2,2 µF moulded metallized polyester capacitor C10 = 2 × 385 pF film dielectric trimmer C11 = 68 pF ceramic capacitor C12 = 2 x 82 pF ceramic capacitors in parallel C13 = 47 pF ceramic capacitor C14 = 385 pF film dielectric trimmer L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2 × 5 mm L2 = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640) L3 = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2 × 5 mm L4 = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2 × 5 mm R1 = 27 Ω (± 5%) carbon resistor R2 = 4,7 Ω (±5%) carbon resistor R3 = 1,5 kΩ (±5%) carbon resistor R4 = 10 Ω wirewound potentiometer (3 W) R5 = 47 Ω wirewound resistor (5,5 W) R6 = 150 Ω (±5%) carbon resistor Measuring conditions for Figs 16 and 17: VCC = 12,5 V f1 = 28,000 MHz f2 = 28,001 MHz Th = 25 °C Rth mb-h ≤ 0,45 ° K/W IC(ZS) = 25 mA typical values BLW60C Measuring conditions for Figs 18 and 19: VCC = 13,5 V f1 = 28,000 MHz f2 = 28,001 MHz Th = 25 °C Rth mb-h ≤ 0,45 ° K/W IC(ZS) = 25 mA typical values March 1993 11 Philips Semiconductors Product specification VHF power transistor BLW60C handbook, halfpage intermodulation distortion versus −20 MGP493 MGP494 handbook, halfpage double-tone efficiency versus 40 output power * d3, d5 (dB) d5 −40 20 d3 ηdt (%) output power typ −60 0 0 20 P.E.P. (W) 40 0 20 P.E.P. (W) 40 Fig.16 Fig.17 handbook, halfpage intermodulation distortion versus −20 MGP495 MGP496 handbook, halfpage double-tone efficiency versus 40 output power * d3, d5 (dB) d5 −40 20 d3 ηdt (%) output power typ −60 0 0 20 P.E.P. (W) 40 0 20 P.E.P. (W) 40 Fig.18 Fig.19 * Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. March 1993 12 Philips Semiconductors Product specification VHF power transistor BLW60C handbook, halfpage 30 MGP497 handbook, halfpage 10 MGP498 Gp (dB) (Ω) 7.5 ri input impedance (series components) versus frequency 5 xi (Ω) 2.5 20 5 xi 2.5 ri 0 −2.5 10 1 10 f (MHz) 102 0 1 10 f (MHz) −5 102 Fig.20 Fig.21 S.S.B. class-AB operation Conditions for Figs 20 and 21: VCC = 12,5 V PL = 30 W (P.E.P.) Th = 25 °C Rth mb-h ≤ 0,45 K/W IC(ZS) = 25 mA ZL = 1,9 Ω VCC = 13,5 V PL = 35 W (P.E.P.) Th = 25 °C Rth mb-h ≤ 0,45 K/W IC(ZS) = 25 mA ZL = 1,9 Ω The typical curves (both conditions) hold for an unneutralized amplifier. March 1993 13 Philips Semiconductors Product specification VHF power transistor PACKAGE OUTLINE Studded ceramic package; 4 leads D BLW60C SOT120A A Q c N1 N D1 D2 A w1 M A M W N3 X H b detail X M1 4 L 3 H 1 2 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.90 5.48 c 0.18 0.14 D 9.73 9.47 D1 8.39 8.12 D2 9.66 9.39 H 27.44 25.78 L 9.00 8.00 M 3.41 2.92 M1 1.66 1.39 N 12.83 11.17 N1 1.60 0.00 N3 3.31 2.54 0.130 0.100 Q 4.35 3.98 0.171 0.157 W w1 0.38 8-32 UNC 0.015 inches 0.283 0.248 0.232 0.007 0.216 0.004 0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015 0.354 0.134 0.315 0.115 0.065 0.505 0.063 0.055 0.440 0.000 OUTLINE VERSION SOT120A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 March 1993 14 Philips Semiconductors Product specification VHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLW60C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 15