BLW81

DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. BLW81 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 10 10 > Gp dB 6,0 > typ. 13,5 η % 60 typ. 60 zi Ω 1,3 + j2,5 1,2 − j0,6 YL mS 150 − j66 140 − j80 PIN CONFIGURATION PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c. or average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj max max max max max max max 36 V 17 V 4V 2,5 A 7,5 A BLW81 40 W 200 °C −65 to +150 °C MGP573 handbook, halfpage 10 MGP574 handbook, halfpage 50 IC (A) Prf (W) r.f. power dissipation VCE ≤ 16.5 V f > 1 MHz 40 short time operation during mismatch derate by 0.204 W/K continuous operation 30 Tmb = 25 °C 20 Th = 70 °C 10 1 1 10 VCE (V) 102 0 0 50 Th (°C) 100 Fig.2 Fig.3 THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 4,3 K/W 0,6 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C Breakdown voltages Collector-emitter voltage VBE = 0; IC = 25 mA Collector-emitter voltage open base; IC = 100 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) IC = 1,25 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 3,75 A; IB = 0,75 A Transition frequency at f = 500 MHz (1) IC = 1,25 A; VCE = 12,5 V IC = 3,75 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 12,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. Cre Ccs typ typ Cc typ fT fT typ typ VCEsat typ hFE > typ ICES < V(BR)EBO > V(BR)CEO > V(BR)CES > BLW81 36 V 17 V 4V 10 mA 10 35 0,75 V 1,3 GHz 0,9 GHz 34 pF 18 pF 1,2 pF March 1993 4 Philips Semiconductors Product specification UHF power transistor BLW81 MGP575 handbook, halfpage 40 VCE = 5 V typ Tj = 25 °C handbook, halfpage 60 MGP576 IE = Ie = 0 f = 1 MHz Tj = 25 °C hFE 30 Cc (pF) 40 typ 20 20 10 0 0 2.5 5 IC (A) 7.5 0 0 10 VCB (V) 20 Fig.4 Fig.5 handbook, full pagewidth 2 MGP577 VCE = 12.5 V f = 500 MHz Tj = 25 °C fT (GHz) 1.5 typ 1 0.5 0 0 2.5 5 IC (A) 7.5 Fig.6 March 1993 5 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C f (MHz) 470 470 175 VCE (V) 12,5 13,5 12,5 PL (W) 10 10 10 PS (W) < 2,5 typ 1,9 typ 0,45 GP (dB) > 6,0 typ 7,2 typ 13,5 IC (A) < 1,33 − − η (%) > 60 typ 75 typ 60 zi (Ω) 1,3 + j2,5 − 1,2 − j0,6 BLW81 YL (mS) 150 − j66 − 140 − j80 handbook, full pagewidth C1 C2 50 Ω C5 T.U.T. L3 C3 C4 L2 C6 C7 R1 C8 R2 L5 C10 50 Ω C9 L1 L4 +VCC MGP578 Fig.7 Class-B test circuit at f = 470 MHz. List of components: C1 = 2,2 pF (± 0, 25 pF) ceramic capacitor C2 = C9 = C10 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003) C3 = 3,9 pF (± 0,25 pF) ceramic capacitor C4 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C5 = C6 = 15 pF ceramic chip capacitor (cat. no. 2222 851 13159) C7 = 100 pF ceramic feed-through capacitor C8 = 100 nF polyester capacitor L1 = stripline (27,9 mm × 6,0 mm) L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. = 4 mm; leads 2 × 5 mm L3 = 17 nH; 11⁄2 turns enamelled Cu wire (1 mm); spacing 1 mm; int. dia. = 6 mm; leads 2 × 5 mm L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = stripline (45,8 mm × 6,0 mm) L1 and L5 are striplines on a double Cu-clad printed circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". R1 = 1 Ω (± 5%) carbon resistor R2 = 10 Ω (± 5%) carbon resistor Component layout and printed-circuit board for 470 MHz test circuit (Fig.8). March 1993 6 Philips Semiconductors Product specification UHF power transistor BLW81 124 handbook, full pagewidth 56 R1 C3 C1 L2 C2 L1 C5 C6 C4 L3 C7 C9 rivet C10 L5 R2 L4 C8 +VCC MGP579 The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets. Fig.8 Component layout and printed-circuit board for 470 MHz test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLW81 handbook, halfpage 30 MGP580 MGP581 PL (W) 20 f = 470 MHz typical values VCC = 12.5 V VCC = 13.5 V handbook, halfpage 10 f = 470 MHz Th = 25 °C typical values VCC = 12.5 V VCC = 13.5 V 100 Gp (dB) η (%) η Th = 25 °C 5 70 °C Gp 50 10 0 0 2.5 PS (W) 5 0 0 10 20 PL (W) 0 30 Fig.9 Fig.10 Measuring conditions for R.F. SOAR f = 470 MHz Th = 70 °C Rth mb-h = 0,6 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in the circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom ) increases linearly with supply over-voltage ratio. handbook, halfpage 15 MGP582 PLnom (W) VSWR = 1 13 VSWR = 2.25 5 11 10 50 PS PSnom 9 1 1.1 1.2 VCC VCCnom 1.3 Fig.11 March 1993 8 Philips Semiconductors Product specification UHF power transistor OPERATING NOTE Below 200 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. BLW81 MGP583 handbook, halfpage 20 Gp (dB) 15 power gain versus frequency (class-B operation) 10 5 100 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 °C typical values 300 f (MHz) 500 Fig.12 MGP584 MGP585 handbook, halfpage impedance (series components) input 4 handbook, halfpage impedance (parallel components) load 8 0 CL (pF) −50 ri, xi (Ω) versus frequency (class-B operation) RL (Ω) xi 7.5 versus frequency (class-B operation) CL 2 ri ri RL 0 7 CL xi RL −100 −2 100 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 °C typical values 300 f (MHz) 500 6.5 100 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 °C typical values 300 f (MHz) −150 500 Fig.13 Fig.14 March 1993 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Studded ceramic package; 4 leads BLW81 SOT122A D ceramic BeO metal c A Q N1 D1 A w1 M A M W N D2 N3 X M1 H b detail X 4 L α 3 H 1 2 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381 α 90° OUTLINE VERSION SOT122A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 March 1993 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLW81 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11