BLX94C

DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor FEATURES • Withstands full load mismatch • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Transmitting applications in the UHF range with a nominal supply voltage up to 28 V. PINNING - SOT122A PIN 1 2 3 4 SYMBOL c e b e emitter base emitter DESCRIPTION collector 2 MAM229 BLX94C DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. handbook, halfpage 4 c 1 3 b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-B f (MHz) 470 VCE (V) 28 PL (W) 25 Gp (dB) >6.5 ηC (%) >55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Feb 06 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO VEBO IC IC(AV) ICM Ptot Tstg Tj PARAMETER collector-emitter voltage (peak value) collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation storage temperature operating junction temperature f > 1 MHz ≤ Tmb = 25 °C VBE = 0 open base open collector CONDITIONS − − − − − − − −65 − MIN. BLX94C MAX. 65 30 4 2.5 2.5 6 60 +150 200 UNIT V V V A A A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base (DC dissipation) thermal resistance from junction to mounting base (RF dissipation) thermal resistance from mounting base to heatsink CONDITIONS Ptot = 20 W;Tmb = 82 °C; Th = 70 °C Ptot = 20 W;Tmb = 82 °C; Th = 70 °C Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 4 2.7 0.6 VALUE UNIT K/W K/W K/W handbook, halfpage 10 MBH096 handbook, halfpage 60 MBH097 Ptot (W) IC (A) (2) (1) 50 (3) 40 (2) 1 30 (1) 20 10−1 1 10 VCE (V) 102 10 0 50 Th (oC) 100 (1) Tmb = 25 °C. (2) Th = 70 °C. (1) Continuous DC operation. (2) Continuous RF operation. (3) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power derating curves. 1996 Feb 06 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CES V(BR)CEO V(BR)EBO VCEsat ICES ESBR hFE fT PARAMETER CONDITIONS MIN. 65 30 4 − − 3 3 15 − − − − − TYP. − − − 1.5 − − − 50 1.1 0.75 33 18 1.2 BLX94C MAX. − − − − 10 − − − − − − − − UNIT V V V V mA mJ mJ fT fT pF pF pF collector-emitter breakdown voltage VBE = 0; IC = 25 mA collector-emitter breakdown voltage open base; IC = 100 mA emitter-base breakdown voltage collector-emitter saturation voltage collector cut-off current second breakdown energy DC current gain transition frequency open collector; IE = 10 mA IC = 4 A; IB = 0.8 A; note 1 VBE = 0; VCE = 30 V open base; L = 25 mH; f = 50 Hz RBE = 10 Ω; L = 25 mH; f = 50 Hz VCE = 5 V; IC = 1.5 A; note 1 VCB = 28 V; IE = −1.5 A; f = 500 MHz; note 1 VCB = 28 V; IE = −4 A; f = 500 MHz; note 1 Cc Cre Cc-s Note collector capacitance feedback capacitance collector-stud capacitance VCB = 28 V; IE = ie = 0; f = 1 MHz VCE = 28 V; IC = 20 mA; f = 1 MHz; 1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02. handbook, halfpage 100 MBH099 handbook, halfpage 75 MBH098 hFE VCE = 25 V Cc (pF) 50 50 5V 25 0 0 2 IC (A) 4 0 0 20 VCB (V) 40 Measured under pulsed conditions; tp ≤ 200 µs; δ ≤ 0.02;Tj = 25 °C. (1) VCE = 25 V. (2) VCE = 5 V. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Collector capacitance as a function of collector-base voltage; typical values. 1996 Feb 06 4 Philips Semiconductors Product specification UHF power transistor BLX94C handbook, full pagewidth 1,5 MBH106 fT (GHz) 1 0.5 0 0 −1 −2 −3 IE (A) −4 VCB = 28 V; Tj = 25 °. Fig.6 Transmission frequency as a function of emitter current; typical values. 1996 Feb 06 5 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 470 VCE (V) 28 PL (W) 25 PS (W) 6.5 typ. 7.25 IC (A) 55 typ. 58 handbook, halfpage 10 MBH101 100 MBH100 handbook, halfpage 40 PL (W) Gp (dB) Gp η (%) 30 5 η 50 20 10 0 0 VCE = 28 V. ICQ = 200 mA. f = 470 MHz. 20 PL (W) 0 40 0 0 VCE = 28 V. Th = 25 °C. f = 470 MHz. 2 4 6 PS (W) 8 Fig.7 Power gain and efficiency as functions of load power; typical values. Fig.8 Load power as a function of source power; typical values. 1996 Feb 06 6 Philips Semiconductors Product specification UHF power transistor BLX94C handbook, full pagewidth input C2 ,, L1 R1 C3 L2 T.U.T. ,, L4 L3 C5 R2 C6 L5 +VCC C7 output ZS = 50 Ω C1 C8 C4 ZL = 50 Ω MBH107 Fig.9 Class-B test circuit at f = 470 MHz. List of components (see Figs 9 and 10) COMPONENT C1, C2, C8 C3, C4 C5 C6 C6 C7 L1 L2 L3 DESCRIPTION film dielectric trimmer capacitor chip capacitor feed through capacitor polyester capacitor chip capacitor film dielectric trimmer capacitor stripline; note 1 13 turns enamelled 0.5 mm copper wire 2 turns 1 mm copper wire VALUE 2 to 9 pF 15 pF 100 pF 33 nF 22 nF, 63 V 2 to 18 pF length 41.1 mm width 5 mm int. diameter 4 mm close wound int. diameter 4 mm winding pitch 1.5 mm leads 2 x 5 mm length 52.7 mm width 5 mm 750 Ω; ± 20% 1Ω 10 Ω 4312 020 36640 2222 809 09003 DIMENSIONS CATALOGUE No. 2222 809 09002 L4 L5 R1 R2 Note stripline; note 1 Ferroxcube choke coil carbon resistor carbon resistor 1. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr = 2.74); thickness 1.45 mm. 1996 Feb 06 7 Philips Semiconductors Product specification UHF power transistor BLX94C handbook, full pagewidth 146 41.1 52.7 rivet (4x) 47 L2 input 50 Ω C1 L1 C2 C4 L3 C5 L5 R2 VCC MBH108 R1 C3 C7 L4 C6 C8 output 50 Ω Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.10 Component layout and printed-circuit board for 470 MHz class-B test circuit. 1996 Feb 06 8 Philips Semiconductors Product specification UHF power transistor BLX94C MBH102 handbook, halfpage 30 handbook, halfpage 3 MBH103 ri, xi (Ω) xi PL (W) Th = 50 oC 70 oC 2 1 ri 20 90 oC 0 −1 10 1 10 VSWR 102 −2 100 300 f (MHz) 500 VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. VCE = 28 V; f = 470 MHz; Rth mb-h = 0.6 K/W. Fig.11 Load power as a function of VSWR. Fig.12 Input impedance as a function of frequency (series components); typical values. handbook, halfpage 8 MBH104 handbook, halfpage G 24 MBH105 p (dB) 20 RL, XL (Ω) XL 6 16 12 8 RL 4 4 100 300 f (MHz) 500 0 100 300 f (MHz) 500 VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. Fig.13 Load impedance as a function of frequency (series components); typical values. Fig.14 Power gain as a function of frequency; typical values. 1996 Feb 06 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE BLX94C 5.9 5.5 handbook, full pagewidth (4x) 5 8.8 (4x) min 8-32 UNC 1.52 0.14 metal BeO ceramic 4 1 27.6 24.9 3 6.35 3.0 8.5 2 3.3 1.6 max 7.6 max 27.6 24.9 MSA246 3.25 2.80 12.0 11.0 5.6 max Dimensions in mm. Torque on nut: min. 0.75 Nm; max. 0.85 Nm. Mounting hole to have no burrs at either end. De-burring must leave surface flat; do not chamfer or countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. Fig.15 SOT122A. 1996 Feb 06 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLX94C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 06 11