BR211

Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical applications include transient overvoltage protection in telecommunications equipment. QUICK REFERENCE DATA SYMBOL V(BO) IH ITSM PARAMETER BR211-140 to 280 Breakover voltage Holding current Non-repetitive peak current MIN. 140 150 MAX. 280 40 UNIT V mA A OUTLINE - SOD84 BR211-XXX SYMBOL XXX denotes voltage grade LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VD ITSM1 ITSM2 I2t dIT/dt Ptot PTM Tstg Ta Tvj PARAMETER Continuous voltage Non repetitive peak current Non repetitive on-state current I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation Peak dissipation Storage temperature Operating ambient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. -65 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C August 1996 1 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series THERMAL RESISTANCES SYMBOL Rth j-e Rth j-a Zth j-a Rth e-tp Rth e-a Rth tp-a PARAMETER Thermal resistance junction to envelope Thermal resistance junction to ambient Thermal impedance junction to ambient Thermal resistance envelope to tie point Thermal resistance envelope to ambient Thermal resistance tie point to ambient CONDITIONS MIN. mounted as fig:12 tp = 1 ms lead length = 5 mm lead length = 10 mm lead length = 5 mm lead length = 10 mm mounted as fig:12 mounted with 1 cm2 copper laminate per lead. mounted with 2.25 cm2 copper laminate per lead TYP. 22 105 2.62 15 30 440 350 70 55 45 MAX. UNIT K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL V V(BR) V(BO) 1 TM PARAMETER On-state voltage Avalanche voltage (min) Breakover voltage (max) CONDITIONS ITM = 2 A I(BR) = 10mA I ≤ IS, tp = 100 µs BR211-140 BR211-160 BR211-180 BR211-200 BR211-220 BR211-240 BR211-260 BR211-280 MIN. 123 140 158 176 193 211 228 246 150 100 10 - TYP. 140 160 180 200 220 240 260 280 +0.1 200 - MAX. 2.5 157 180 202 224 247 269 292 314 1000 10 UNIT V V V V V V V V V V V %/K mA mA mA µA S(br) IH2 IS3 ID4 Temperature coefficient of V(BR) Holding current Tj = 25˚C Tj = 70˚C Switching current tp = 100 µs Off-state current VD = 85% V(BR)min, Tj = 70˚C 1 Measured under pulsed conditions to avoid excessive dissipation 2 The minimum current at which the diode will remain in the on-state 3 The avalanche current required to switch the diode to the on-state 4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative humidity < 65%. August 1996 2 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt Cj PARAMETER Linear rate of rise of off-state voltage that will not trigger any device Off-state capacitance CONDITIONS V(DM) = 85% V(BR)min; Tj = 70 ˚C VD = 0 V; f = 1 kHz to 1 MHz MIN. TYP. MAX. 2000 100 UNIT V/µs pF current IT VT 20 ITSM / A BR211 I ITSM2 time 15 IS IH ID V(BR) I(BR) VD voltage 5 V(BO) 10 Symbol Symmetric BOD 0 1 10 100 Number of impulses 1000 10000 Fig.1. Definition of breakover diode characteristics. Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; Tj = 70˚C prior to surge. V(BR)(Tj) V(BR)(25 C) current 1.06 100% 90% ITSM 1.04 1.02 1.00 50% 0.98 0.96 30% 0.94 0.92 0 10us 700us time 0.90 -40 -20 0 20 40 Tj / C 60 80 100 Fig.2. Test waveform for high voltage impulse (ITSM1) according to CCITT vol IX-Rec K17. Fig.4. Normalised avalanche breakdown voltage V(BR) and V(BO) as a function of temperature. August 1996 3 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series 20 IT / A Tj = 25 C Tj = 150 C 10 IH / A 15 1 10 typ max 0.1 min 5 0.01 0 1 2 VT / V 3 4 0.001 -50 0 50 Tj / C 100 150 Fig.5. On-state current as a function of on-state voltage; tp = 200 µs to avoid excessive dissipation. 100 ID / uA Fig.8. Minimum holding current as a function of temperature. 100 Cj / pF 10 max typ BR211-140 BR211-280 10 1 0.1 -40 -20 0 20 40 Tj / C 60 80 100 1 1 10 VD / V 100 1000 Fig.6. Maximum off-state current as a function of temperature. Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; Tj = 25˚C. Zth / (K/W) BR211 10 IS / A 1000 1 max typ 100 0.1 10 0.01 min 1 P D tp t 0.001 -50 0 50 Tj / C 100 150 0.1 10us 1ms 0.1s tp / s 10s 1000s Fig.7. Switching current as a function of junction temperature. Fig.10. Transient thermal impedance. Zth j-a = f(tp). August 1996 4 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series junction Rth j-e envelope Rth e-tp tie-point Rth tp-a 3 50 50 Rth e-a 7 25 2 ambient Fig.11. Components of thermal resistance, Rth j − a = Rth j − e + Rthe − a .(Rthe − tp + Rthtp − a ) (Rthe − a + Rthe − tp + Rthtp − a ) Fig.12. Mounting on pcb used for Rth measurement. August 1996 5 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series MECHANICAL DATA Dimensions in mm 5 max 0.81 max 3.15 max 28 min 4.3 max Fig.13. SOD84. 28 min August 1996 6 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 7 Rev 1.200