BRS212-260

Philips Semiconductors Product specification Breakover diodes BRS212 series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V(BO) PARAMETER Breakover voltage BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-220 BRS212-240 BRS212-260 BRS212-280 Holding current Non-repetitive peak pulse current (CCITT K17) MIN. 150 TYP. 140 160 180 200 220 240 260 280 MAX. 40 UNIT V V V V V V V V mA A IH IPP OUTLINE - SOD106 date code XXX denotes voltage grade SYMBOL YM 212 XXX LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VD PARAMETER Continuous voltage CONDITIONS BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-220 BRS212-240 BRS212-260 BRS212-280 5/310 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs MIN. - 40 MAX. 105 120 135 150 165 180 195 210 40 15 1.1 50 4 50 150 150 260 UNIT V V V V V V V V A A A2s A/µs W W ˚C ˚C ˚C IPP ITSM I2t dIT/dt Ptot PTM Tstg Tj TL Non-repetitive peak pulse current Non repetitive surge peak on-state current I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation on Tsp = 50˚C infinite heatsink Peak dissipation tp = 1 ms; Ta = 25˚C Storage temperature Operating junction temperature Maximum terminal temperature soldering time = 10 s for soldering January 1997 PH 1 Rev 1.000 Philips Semiconductors Product specification Breakover diodes BRS212 series THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a Zth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient Thermal impedance junction to ambient CONDITIONS MIN. pcb mounted; minimum footprint tp = 1 ms TYP. 100 2.6 MAX. 25 UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated TYPE PARAMETER Marking Avalanche voltage IBR = 10 mA VBR min V 212-140 212-160 212-180 212-200 212-220 212-240 212-260 212-280 123 140 158 176 193 211 228 246 typ V 140 160 180 200 220 240 260 280 typ V 140 160 180 200 220 240 260 280 Breakover voltage ID ≤ IS tp = 100 µs VBO max V 157 180 202 224 247 269 292 314 Off-state current Critical rate of rise of off-state voltage Tj = 70˚C dVD/dt @ VDM max V 105 120 135 150 165 180 195 210 MIN. 150 100 10 TYP. 200 +0.1 V/µs 2000 2000 2000 2000 2000 2000 2000 2000 MAX. 2.5 1000 100 V 105 120 135 150 165 180 195 210 UNIT V mA mA mA %/K pF Conditions Symbol Limits Units BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-220 BRS212-240 BRS212-260 BRS212-280 SYMBOL VT IH IS S(BR) Cj Tj = 70˚C; RH ≤ 65% ID @ VD max µA 10 10 10 10 10 10 10 10 PARAMETER On-state voltage Holding current1 Switching current2 Temperature coefficient of avalanche voltage Junction capacitance CONDITIONS ITM = 2 A; tp = 200 µs Tj = 25˚C Tj = 70˚C tp = 100 µs VD = 0 V, f = 1 kHz to 1 MHz 1 The minimum current at which the diode will remain in the on-state 2 The avalanche current required to switch the diode to the on-state. January 1997 2 Rev 1.000 Philips Semiconductors Product specification Breakover diodes BRS212 series current IT VT 1.06 1.04 IS V(BR)(Tj) V(BR)(25 C) 1.02 1.00 0.98 IH ID V(BR) I(BR) VD voltage V(BO) 0.96 0.94 0.92 Symbol Symmetric BOD 0.90 -40 -20 0 20 40 Tj / C 60 80 100 Fig.1. Definition of breakover diode characteristics. Fig.4. Normalised avalanche breakdown voltage V(BR) and V(BO) as a function of temperature. IT / A Tj = 25 C Tj = 150 C 15 current 100% 90% I PP 20 50% 10 typ max 30% 5 0 5us 310us time 0 1 2 VT / V 3 4 Fig.2. Test waveform for high voltage impulse (IPP) according to CCITT vol IX-Rec K17. Fig.5. On-state current as a function of on-state voltage; tp = 200 µs to avoid excessive dissipation. 100 ID / uA 20 ITSM / A BR211 I ITSM time 15 10 10 max 1 5 0 0.1 1 10 100 Number of impulses 1000 10000 -40 -20 0 20 40 Tj / C 60 80 100 Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; Tj = 70˚C prior to surge. Fig.6. Maximum off-state current as a function of temperature. January 1997 3 Rev 1.000 Philips Semiconductors Product specification Breakover diodes BRS212 series 10 IS / A 100 Cj / pF 1 max typ typ BR211-140 BR211-280 0.1 10 0.01 min 0.001 -50 0 50 Tj / C 100 150 1 1 10 VD / V 100 1000 Fig.7. Switching current as a function of junction temperature. Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; Tj = 25˚C. Zth / (K/W) BR211 10 IH / A 1000 1 100 0.1 min 10 0.01 1 P D tp t 0.001 -50 0 50 Tj / C 100 150 0.1 10us 1ms 0.1s tp / s 10s 1000s Fig.8. Minimum holding current as a function of temperature. Fig.10. Transient thermal impedance. Zth j-a = f(tp). January 1997 4 Rev 1.000 Philips Semiconductors Product specification Breakover diodes BRS212 series MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g 5.5 5.1 4.5 4.3 2.3 2.0 0.2 0.05 3.3 2.7 2.8 1.6 2.4 1.4 Fig.11. SOD106. Notes 1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering Guidelines". Order code:9397 750 00505. January 1997 5 Rev 1.000 Philips Semiconductors Product specification Breakover diodes BRS212 series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1997 6 Rev 1.000