BSN205

DISCRETE SEMICONDUCTORS DATA SHEET BSN205; BSN205A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line and high speed transformer drivers etc. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDS(on) PINNING - TO-92 VARIANT BSN205 1 2 3 PIN CONFIGURATION = gate = drain = source 1 2 3 QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 400 mA; VGS = 10 V Transfer admittance ID = 400 mA; VDS = 25 V Ptot BSN205; BSN205A VDS ± VGSO ID max. max. max. max. typ. max. 200 V 20 V 300 mA 1W 4.5 Ω 6Ω 200 mS 350 mS RDS(on)  Yfs  min. typ. BSN205A = source = gate = drain handbook, halfpage d 1 2 3 g s MAM148 Note: various pinout configurations available. Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a VDS BSN205; BSN205A max. max. max. max. max. max. 200 V 20 V 300 mA 1.2 A 1W 150 °C ± VGSO ID IDM Ptot Tstg Tj −65 to + 150 °C = 125 K/W 1. Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 Drain-source leakage current VDS = 160 V; VGS = 0 Gate-source leakage current VGS = 20 V; VDS = 0 Gate threshold voltage ID = 1 mA; VDS = VGS Drain-source ON-resistance ID = 400 mA; VGS = 10 V Transfer admittance ID = 400 mA; VDS = 25 V Input capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Ciss typ. max. 45 pF 60 pF | Yfs| min. typ. 200 mS 350 mS RDS(on) typ. max. VGS(th) min. max. 0.8 V 2.8 V 4Ω 6Ω IGSS max. 100 nA IDSS max. 1 µA V(BR) DSS min. 200 V April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor Output capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Feedback capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Switching times (see Figs 2 and 3) ID = 250 mA; VDD = 50 V VGS = 0 to 10 V ton Crss Coss BSN205; BSN205A typ. max. 15 pF 25 pF typ. max. 3.5 pF 10 pF typ. max. typ. max. 5 ns 10 ns 15 ns 20 ns toff handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID 50 Ω MBB691 OUTPUT 10 % ton toff MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle) BSN205; BSN205A SOT54 variant c L2 E d A L b 1 2 D e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5 April 1995 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information BSN205; BSN205A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES BSN205; BSN205A April 1995 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/01/pp8 Date of release: April 1995 Document order number: 9397 750 02461