BSN274

DISCRETE SEMICONDUCTORS DATA SHEET BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc., due to low threshold voltage • High speed switching • No secondary breakdown DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current (DC) drain-source on-resistance threshold voltage BSN274; BSN274A MAX. 270 250 8 2 V UNIT mA Ω V PINNING (BSN274) PIN 1 2 3 gate drain source DESCRIPTION PINNING (BSN274A) PIN 1 2 3 gate drain DESCRIPTION source Note: Other pinnings are available on request. PIN CONFIGURATION - TO-92 VARIANT handbook, halfpage d 1 2 3 g MAM146 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range operating junction temperature open drain DC peak up to Tamb = 25 °C (note 1) CONDITIONS BSN274; BSN274A MIN. − − − − − −65 − MAX. 270 20 250 1 1 150 150 V V UNIT mA A W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Notes 1. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum 10 mm × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS ±IGSS VGS(th) RDS(on) RDS(on)  Yfs  Ciss PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate threshold voltage drain-source on-resistance drain-source on-resistance transfer admittance input capacitance CONDITIONS VGS = 0 ID = 10 µA VDS = 220 V VGS = 0 ±VGS = 20 V VDS = 0 ID = 1 mA VDS = VGS ID = 250 mA VGS = 10 V ID = 20 mA VGS = 2.4 V ID = 250 mA VDS = 25 V VDS = 25 V VGS = 0 f = 1 MHz VDS = 25 V VGS = 0 f = 1 MHz MIN. 270 − − 0.8 − − 200 − − − − − 6.5 9 400 65 TYP. − 1 100 2 8 14 − 90 MAX. UNIT V µA nA V Ω Ω mS pF PARAMETER from junction to ambient (note 1) VALUE 125 UNIT K/W Coss output capacitance − 20 30 pF April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor SYMBOL Crss PARAMETER feedback capacitance CONDITIONS VDS = 25 V VGS = 0 f = 1 MHz ID = 250 mA VDD = 50 V VGS = 0 to 10 V ID = 250 mA VDD = 50 V VGS = 0 to 10 V − MIN. 5 BSN274; BSN274A TYP. 15 MAX. UNIT pF Switching times (see Figs 2 and 3) ton switching-on time − 5 10 ns toff switching-off time − 20 30 ns handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID 50 Ω MSA631 OUTPUT 10 % ton toff MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle) BSN274; BSN274A SOT54 variant c L2 E d A L b 1 2 D e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5 April 1995 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information BSN274; BSN274A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES BSN274; BSN274A April 1995 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/01/pp8 Date of release: April 1995 Document order number: 9397 750 02463