BSR52

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor Product specification Supersedes data of 1999 Apr 26 2004 Nov 11 Philips Semiconductors Product specification NPN Darlington transistor FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification. handbook, halfpage BSR52 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BSR62. 1 2 3 MAM307 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BSR52 SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter VBE = 0 V open collector − − − − − − − −65 − −65 MIN. MAX. 90 80 5 1 2 100 830 +150 150 +150 V V V A A mA mW °C °C °C UNIT 2004 Nov 11 2 Philips Semiconductors Product specification NPN Darlington transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICES IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VBE = 0 V; VCE = 80 V VEB = 4 V; IC = 0 A VCE = 10 V; see Fig.2 IC = 150 mA IC = 500 mA VCEsat VBEsat fT collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA IC = 1 A; IB = 4 mA base-emitter saturation voltage transition frequency IC = 0.5 A; IB = 0.5 mA IC = 1 A; IB = 4 mA VCE = 5 V; IC = 500 mA; f = 100 MHz 1000 2000 − − − − − − − − − − − 200 − − MIN. − − TYP. − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 150 BSR52 UNIT K/W MAX. 50 50 UNIT nA nA 1.3 1.6 1.9 2.2 − V V V V MHz Switching times (between 10% and 90% levels); see Fig.3 ton toff turn-on time turn-off time ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA − − − − 500 1300 ns ns 2004 Nov 11 3 Philips Semiconductors Product specification NPN Darlington transistor BSR52 handbook, full pagewidth 5000 MGD838 hFE 4000 3000 2000 1000 0 10−1 VCE = 10 V. 1 10 102 IC (mA) 103 Fig.2 DC current gain; typical values. handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 2004 Nov 11 4 Philips Semiconductors Product specification NPN Darlington transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BSR52 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 2004 Nov 11 5 Philips Semiconductors Product specification NPN Darlington transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BSR52 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Nov 11 6 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp7 Date of release: 2004 Nov 11 Document order number: 9397 750 13601