BSS138PW

BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA [1] Min - Typ 0.9 Max 60 ±20 320 1.6 Unit V V mA Ω [2] [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Pulse test: tp ≤ 300 μs; δ ≤ 0.01. NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 2 3 D Simplified outline Graphic symbol G mbb076 S 3. Ordering information Table 3. Ordering information Package Name BSS138PW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4. Marking Table 4. Marking codes Marking code[1] XJ* Type number BSS138PW [1] * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current Conditions Tamb = 25 °C Tamb = 25 °C VGS = 10 V Tamb = 25 °C Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs [1] Min - Max 60 ±20 320 200 1.2 Unit V V mA mA A BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 2 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation Conditions Tamb = 25 °C Tsp = 25 °C Tj Tamb Tstg IS [1] [2] [2] [1] Min −55 −65 Max 260 310 830 150 +150 +150 280 Unit mW mW mW °C °C °C mA junction temperature ambient temperature storage temperature source current Tamb = 25 °C [1] Source-drain diode - Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 120 Pder (%) 80 017aaa001 120 Ider (%) 80 017aaa002 40 40 0 −75 −25 25 75 125 175 Tamb (°C) 0 −75 −25 25 75 125 175 Tamb (°C) P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of ambient temperature Fig 2. ID I der = ------------------- × 100 % I D ( 25 ° C ) Normalized continuous drain current as a function of ambient temperature BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 3 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 10 ID (A) 1 017aaa121 Limit RDSon = VDS/ID (1) (2) 10−1 (3) (4) 10−2 (5) (6) 10−3 10−1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 °C (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) [1] [2] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] [2] Min - Typ 415 350 - Max 480 400 150 Unit K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 4 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 103 duty cycle = 1 Zth(j-a) (K/W) 102 0.75 0.5 0.33 0.25 0.1 0.2 0.05 017aaa028 10 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. 103 Zth(j-a) (K/W) 102 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa029 duty cycle = 1 0.75 0.5 0.25 0.1 0.33 0.2 0.05 0 10 0.02 0.01 1 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 5 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol V(BR)DSS VGS(th) IDSS Parameter Conditions Min 60 0.9 Typ 1.2 Max 1.5 Unit V V Static characteristics drain-source breakdown ID = 10 μA; VGS = 0 V voltage gate-source threshold voltage drain leakage current ID = 250 μA; VDS = VGS VDS = 60 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] [1] 1 0.9 700 1 10 100 2 1.6 - μA μA nA Ω Ω mS VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 300 mA VDS = 10 V; ID = 200 mA gfs forward transconductance total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage Pulse test: tp ≤ 300 μs; δ ≤ 0.01. - Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD [1] ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz - 0.72 0.14 0.24 38 7 4 2 3 9 4 0.75 0.8 50 6 20 1.1 nC nC nC pF pF pF ns ns ns ns V VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω - Source-drain diode IS = 115 mA; VGS = 0 V 0.47 BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 6 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 1.0 ID (A) 0.8 017aaa112 VGS = 3.5 V 10−3 ID (A) 017aaa113 3.0 V 2.75 V 2.5 V 0.6 2.25 V 0.4 10−4 (1) (2) (3) 10−5 2.0 V 0.2 0.0 0.0 1.0 2.0 3.0 VDS (V) 4.0 10−6 0.0 0.5 1.0 1.5 VGS (V) 2.0 Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 5.0 017aaa114 Fig 7. Sub-threshold drain current as a function of gate-source voltage 6.0 RDSon (Ω) 4.0 017aaa115 RDSon (Ω) 4.0 (1) (2) 3.0 2.0 (3) (1) 2.0 (4) 1.0 (2) (5) 0.0 0.0 0.2 0.4 0.6 0.8 ID (A) 1.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 VGS (V) Tamb = 25 °C (1) VGS = 2.0 V (2) VGS = 2.5 V (3) VGS = 3.0 V (4) VGS = 3.5 V (5) VGS = 10 V ID = 300 mA (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 8. Drain-source on-state resistance as a function of drain current; typical values Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 7 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 0.8 ID (A) 0.6 017aaa116 2.4 a 017aaa022 (1) (2) 1.8 0.4 1.2 0.2 (2) (1) 0.6 0.0 0.0 1.0 2.0 VGS (V) 3.0 0.0 −60 0 60 120 180 Tamb (°C) VDS > ID × RDSon (1) Tamb = 25 °C (2) Tamb = 150 °C R DSon a = ----------------------------R DSon ( 25 ° C ) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 102 (1) (1) 017aaa118 Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 2.0 VGS(th) (V) 1.5 017aaa117 C (pF) (2) (2) 1.0 (3) 10 (3) 0.5 0.0 −60 0 60 120 180 Tamb (°C) 1 10−1 1 10 VDS (V) 102 ID = 0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values f = 1 MHz; VGS = 0 V (1) Ciss (2) Coss (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 8 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 5.0 VGS (V) 4.0 017aaa119 VDS ID VGS(pl) 3.0 2.0 VGS(th) 1.0 VGS QGS1 0.0 0.0 QGS2 QGD QG(tot) 003aaa508 QGS 0.2 0.4 0.6 QG (nC) 0.8 ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values 1.2 IS (A) 0.8 Fig 15. Gate charge waveform definitions 017aaa120 (1) (2) 0.4 0.0 0.0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 9 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 8. Test information t1 t2 P t2 t1 duty cycle δ = t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 10 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT323 (SC-70) BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 11 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 10. Soldering 2.65 1.85 1.325 solder lands 2 solder resist solder paste occupied area Dimensions in mm 2.35 0.6 (3×) 3 1.3 0.5 (3×) 1 0.55 (3×) sot323_fr Fig 19. Reflow soldering footprint SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport direction during soldering 09 (2×) sot323_fw Fig 20. Wave soldering footprint SOT323 (SC-70) BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 12 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Release date 20101102 Data sheet status Product data sheet Change notice Supersedes Document ID BSS138PW v.1 BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 13 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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Product data sheet Rev. 1 — 2 November 2010 14 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 November 2010 15 of 16 NXP Semiconductors BSS138PW 60 V, 320 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 November 2010 Document identifier: BSS138PW