BSS62

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS61; BSS62 PNP Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification PNP Darlington transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification. handbook, halfpage 1 BSS61; BSS62 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 2 3 2 DESCRIPTION PNP Darlington transistor in a TO-39 metal package. NPN complements: BSS51 and BSS52. 3 MAM310 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSS61 BSS62 VCES collector-emitter voltage BSS61 BSS62 IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = −500 mA; VCE = −10 V IC = −500 mA; VCE = −5 V; f = 100 MHz VBE = 0 − − − − − 2000 − − − − − − − 200 −60 −80 −1 0.8 5 − − MHz V V A W W open emitter − − − − −80 −90 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 14 2 Philips Semiconductors Product specification PNP Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSS61 BSS62 VCES collector-emitter voltage BSS61 BSS62 VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C open collector VBE = 0 − − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN. BSS61; BSS62 MAX. −80 −90 −60 −80 −5 −1 −2 −100 0.8 5 +150 200 +150 V V V V V A A UNIT mA W W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 220 35 UNIT K/W K/W 1997 May 14 3 Philips Semiconductors Product specification PNP Darlington transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES BSS61 BSS62 IEBO hFE VCEsat VCEsat emitter cut-off current DC current gain PARAMETER collector cut-off current VBE = 0; VCE = −60 V VBE = 0; VCE = −80 V IC = 0; VEB = −4 V IC = −150 mA; VCE = −10 V IC = −500 mA; VCE = −10 V collector-emitter saturation voltage IC = −500 mA; IB = −0.5 mA collector-emitter saturation voltage BSS61 VCEsat collector-emitter saturation voltage BSS62 VBEsat VBEsat base-emitter saturation voltage base-emitter saturation voltage BSS61 BSS62 fT ton transition frequency IC = −1 A; IB = −1 mA IC = −1 A; IB = −4 mA IC = −500 mA; VCE = −5 V; f = 100 MHz ICon = −500 mA; IBon = −0.5 mA; IBoff = 0.5 mA ICon = −1 A; IBon = −1 mA; IBoff = 1 mA toff turn-off time ICon = −500 mA; IBon = −0.5 mA; IBoff = 0.5 mA ICon = −1 A; IBon = −1 mA; IBoff = 1 mA − − − − − − − IC = −1 A; IB = −4 mA IC = −1 A; IB = −4 mA; Tj = 200 °C IC = −500 mA; IB = −0.5 mA − − − IC = −1 A; IB = −1 mA IC = −1 A; IB = −1 mA; Tj = 200 °C − − − − − CONDITIONS BSS61; BSS62 MIN. TYP. MAX. UNIT − − − −50 −50 −100 − − −1.3 −1.3 −1.6 −1.6 −1.6 −1.6 −1.9 −2.2 −2.2 − − − − − V V V V V V V V V MHz µs µs µs µs nA nA nA 1000 − 2000 − − − − − − − − − − − 200 IC = −500 mA; IB = −0.5 mA; Tj = 200 °C − Switching times (between 10% and 90% levels) turn-on time 0.5 0.4 0.7 1.5 1997 May 14 4 Philips Semiconductors Product specification PNP Darlington transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BSS61; BSS62 SOT5/11 j B α seating plane wM AMBM 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 May 14 5 Philips Semiconductors Product specification PNP Darlington transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BSS61; BSS62 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 14 6 Philips Semiconductors Product specification PNP Darlington transistors NOTES BSS61; BSS62 1997 May 14 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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