BSX32

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX32 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN switching transistor FEATURES • High current (max. 1 A) • Low voltage (max. 40 V). APPLICATIONS • High-current switching in industrial applications. DESCRIPTION NPN switching transistor in a TO-39 metal package. 1 handbook, halfpage 2 BSX32 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 1 A; VCE = 5 V IC = 50 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS MIN. − − − − 20 300 TYP. − − − − 60 − − MAX. UNIT 65 40 1 800 − − 60 MHz ns V V A mW ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA − 1997 May 28 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN. MAX. 65 40 6 1 1 200 800 3.5 +150 200 +150 BSX32 UNIT V V V A A mA mW W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 219 50 UNIT K/W K/W 1997 May 28 3 Philips Semiconductors Product specification NPN switching transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 50 V IE = 0; VEB = 4 V VCE = 1 V; note 1 IC = 10 mA IC = 100 mA IC = 500 mA hFE hFE DC current gain DC current gain IC = 1 A; VCE = 5 V; note 1 VCE = 1 V; Tamb = −55 °C; note 1 IC = 100 mA IC = 500 mA VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 1 A; IB = 100 mA; note 1 VBEsat base-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 1 A; IB = 100 mA; note 1 Cc Ce fT ton toff Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. collector capacitance emitter capacitance transition frequency IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA 30 15 − − − − − − − − 300 − − − − 170 360 600 800 − − − − − − − − − 30 60 25 20 − − 60 60 − MIN. − − TYP. − − BSX32 MAX. UNIT 4 300 µA nA 150 − − 250 500 850 900 1.5 2 10 55 − mV mV mV mV V V pF pF MHz Switching times (between 10% and 90% levels) turn-on time turn-off time 35 60 ns ns 1997 May 28 4 Philips Semiconductors Product specification NPN switching transistor PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BSX32 SOT5/11 j B α seating plane wM AMBM 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 May 28 5 Philips Semiconductors Product specification NPN switching transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BSX32 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 28 6 Philips Semiconductors Product specification NPN switching transistor NOTES BSX32 1997 May 28 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 28 Document order number: 9397 750 02039