BSX46

DISCRETE SEMICONDUCTORS DATA SH EET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • General industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 BSX45; BSX46; BSX47 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO BSX45 BSX46 BSX47 VCEO collector-emitter voltage BSX45 BSX46 BSX47 ICM Ptot hFE peak collector current total power dissipation DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 fT transition frequency Tcase ≤ 25 °C IC = 100 mA; VCE = 1 V 63 100 IC = 50 mA; VCE = 10 V; f = 100 MHz 50 100 160 − 160 250 − MHz open base − − − − − − − − − − 40 60 80 1.5 6.25 V V V A W PARAMETER collector-base voltage CONDITIONS open emitter − − − − − − 80 100 120 V V V MIN. TYP. MAX. UNIT 1997 Apr 23 2 Philips Semiconductors Product specification NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSX45 BSX46 BSX47 VCEO collector-emitter voltage BSX45 BSX46 BSX47 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tcase ≤ 25 °C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BSX45; BSX46; BSX47 MIN. − − − − − − − − − − − −65 − −65 MAX. 80 100 120 40 60 80 7 1 1.5 200 6.25 +150 200 +150 V V V V V V V A A UNIT mA W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to case CONDITIONS VALUE 200 28 UNIT K/W K/W thermal resistance from junction to ambient in free air 1997 Apr 23 3 Philips Semiconductors Product specification NPN medium power transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current BSX45; BSX46 ICBO collector cut-off current BSX47 IEBO hFE emitter cut-off current DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16 hFE DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 hFE DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16 hFE DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16 VCEsat VCEsat VBE collector-emitter saturation voltage BSX45; BSX46 collector-emitter saturation voltage BSX47 base-emitter voltage IC = 100 mA; VCE = 1 V IC = 500 mA; VCE = 1 V IC = 1 A; VCE = 1 V Cc collector capacitance BSX45 BSX46 BSX47 Ce fT F emitter capacitance transition frequency noise figure IC = 500 mA; IB = 25 mA IC = 1 A; IB = 100 mA IC = 1 A; VCE = 1 V IC = 500 mA; VCE = 1 V IC = 100 mA; VCE = 1 V IE = 0; VCB = 80 V IE = 0; VCB = 60 V CONDITIONS BSX45; BSX46; BSX47 MIN. − − − − − 15 25 63 100 25 35 − − − − − 0.75 − − − − TYP. MAX. UNIT − − − − − 40 90 100 160 40 60 20 30 − − − − − − − − − − 3.5 30 10 30 10 10 − − 160 250 − − − − 1 900 1 1.5 2 25 20 15 80 − − V mV V V V pF pF pF pF MHz dB nA µA nA µA nA IE = 0; VCB = 60 V; Tamb = 150 °C IE = 0; VCB = 80 V; Tamb = 150 ° IC = 0; VEB = 5 V IC = 100 µA; VCE = 1 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1 kHz; B = 200 Hz − 50 − Switching times (between 10% and 90% levels) ton toff turn-on time turn-off time ICon = 100 mA; IBon = 5 mA; IBoff = −5 mA − − − − 200 850 ns ns 1997 Apr 23 4 Philips Semiconductors Product specification NPN medium power transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BSX45; BSX46; BSX47 SOT5/11 j B α seating plane wM AMBM 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 Apr 23 5 Philips Semiconductors Product specification NPN medium power transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BSX45; BSX46; BSX47 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Apr 23 6 Philips Semiconductors Product specification NPN medium power transistors NOTES BSX45; BSX46; BSX47 1997 Apr 23 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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