BT139

Philips Semiconductors Product specification Triacs BT139 series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT139BT139BT139Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 16 140 600 600F 600G 600 16 140 800 800F 800G 800 16 140 VDRM IT(RMS) ITSM V A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 16 140 150 98 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs BT139 series THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 1.2 1.7 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT139VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ... 0.25 5 8 10 22 7 20 8 10 6 1.2 0.7 0.4 0.1 35 35 35 70 40 60 40 60 30 MAX. ...F 25 25 25 70 40 60 40 60 30 1.6 1.5 0.5 ...G 50 50 50 100 60 90 60 90 60 mA mA mA mA mA mA mA mA mA V V V mA UNIT IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT139VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 16 A; dIcom/dt = 7.2 A/ms; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/µs dVcom/dt - - 10 20 - V/µs tgt - - - 2 - µs September 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs BT139 series 25 Ptot / W BT139 Tmb(max) / C = 180 95 20 IT(RMS) / A BT139 20 1 120 90 101 99 C 15 15 60 30 107 10 113 10 5 5 119 0 0 5 10 IT(RMS) / A 15 125 20 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT139 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT139 1000 ITSM / A 50 IT(RMS) / A 40 30 100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time 20 10 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. ITSM / A BT139 IT T 100 ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C. VGT(Tj) VGT(25 C) 150 1.6 1.4 1.2 1 BT136 Tj initial = 25 C max 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. September 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs BT139 series 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT139 T2+ G+ T2+ GT2- GT2- G+ 50 IT / A Tj = 125 C Tj = 25 C BT139 40 typ Vo = 1.195 V Rs = 0.018 Ohms max 30 20 1 10 0.5 0 -50 0 0 0.5 1 1.5 VT / V 2 2.5 3 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 TRIAC 10 Zth j-mb (K/W) BT139 1 unidirectional bidirectional 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dV/dt (V/us) off-state dV/dt limit BT139...G SERIES 3 2.5 2 1.5 1 0.5 TRIAC 1000 BT139 SERIES 100 BT139...F SERIES dIcom/dt = 20 A/ms 10 16 12 9.3 7.2 5.6 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. September 1997 4 Rev 1.200 Philips Semiconductors Product specification Triacs BT139 series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 5 Rev 1.200 Philips Semiconductors Product specification Triacs BT139 series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.200