BT168GW

BT168GW Thyristors; logic level for RCD/GFI/LCCB applications Rev. 04 — 12 November 2004 Product data sheet 1. Product profile 1.1 General description Passivated, sensitive gate thyristor in a SOT223 plastic package. 1.2 Features s Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.3 Applications s For use in Residual Current Devices (RCD), Ground Fault Interrupters (GFI) and Leakage Current Circuit Breakers (LCCB) applications where a minimum IGT limit is needed. 1.4 Quick reference data s VDRM ≤ 600 V s VRRM ≤ 600 V s IT(AV) ≤ 0.6 A s IT(RMS) ≤ 1 A s ITSM ≤ 8 A s IGT = 50 µA (typical). 2. Pinning information Table 1: Pin 1 2 3 4 Pinning Description cathode anode gate anode 1 2 3 sym037 Simplified outline 4 Symbol SOT223 3. Ordering information Table 2: Ordering information Package Name BT168GW SC-73 Description plastic surface mounted package with increased heatsink; 4 leads Version SOT223 Type number Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM, VRRM IT(AV) IT(RMS) ITSM Parameter repetitive peak off-state voltage average on-state current RMS on-state current non-repetitive peak on-state current half sine wave; Tsp ≤ 112 °C; see Figure 1 all conduction angles; see Figure 4 and 5 half sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 10 ms t = 8.3 ms I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj [1] Conditions [1] Min - Max 600 0.63 1 Unit V A A - 8 9 0.32 50 1 5 5 2 0.1 +150 125 A A A2s A/µs A V V W W °C °C I2t for fusing t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs repetitive rate of rise of on-state current after triggering peak gate current peak gate voltage peak reverse gate voltage peak gate power average gate power storage temperature junction temperature over any 20 ms period −40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 1 Ptot (W) 0.8 2.2 2.8 0.6 a= 1.57 1.9 001aab496 110 Tsp(max) (°C) 113 116 4 conduction angle (degrees) 30 60 90 120 180 0 0.2 0.4 0.6 IT(AV) (A) form factor a 4 2.8 2.2 1.9 1.57 0.4 119 0.2 α 122 0 125 0.8 a = form factor = IT(RMS)/IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 2 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 10 ITSM (A) 8 IT 001aab499 ITSM 6 t tp Tj initial = 25 °C max 4 2 0 1 10 102 n 103 f = 50 Hz. Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 103 ITSM (A) 102 IT 001aab497 ITSM t tp Tj initial = 25 °C max 10 1 10−5 10−4 10−3 tp (s) 10−2 tp ≤ 10 ms. Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 3 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 2 IT(RMS) (A) 1.5 001aab500 1.2 IT(RMS) (A) 0.8 001aab498 (1) 1 0.4 0.5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 Tsp (°C) 150 f = 50 Hz; Tsp ≤ 112 °C. (1) Tsp = 112 °C. Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of solder point temperature; maximum values 5. Thermal characteristics Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions see Figure 6 printed-circuit board mounted, minimum footprint printed-circuit board mounted, pad area as in Figure 15 Min Typ 156 70 Max 15 Unit K/W K/W K/W 102 Zth(j-sp) (K/W) 10 001aab506 1 PD δ= tp T 10−1 tp T t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 4 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 6. Characteristics Table 5: Characteristics Tj = 25 °C; unless otherwise stated Symbol IGT IL IH VT VGT Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V; IT = 10 mA; gate open circuit; see Figure 8 VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ; see Figure 10 VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ; see Figure 11 IT = 1.2 A IT = 10 mA; gate open circuit; see Figure 7 VD = 12 V VD = VDRM(max); Tj = 125 °C ID, IR off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 °C; RGK = 1 kΩ critical rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 125 °C; exponential waveform; see Figure 12 RGK = 1 kΩ gate open circuit tgt tq gate controlled turn-on time ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs 500 800 25 2 100 V/µs V/µs µs µs 0.2 0.5 0.3 0.05 0.8 0.1 V V mA Min 20 Typ 50 2 2 1.25 Max 200 6 5 1.7 Unit µA mA mA V Static characteristics Dynamic characteristics dVD/dt circuit commuted turn-off VD = 67% VDRM(max); Tj = 125 °C; ITM = 1.6 A; time VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ 1.6 VGT(Tj) VGT(25 °C) 1.2 001aab501 3 IGT(Tj) IGT(25 °C) 2 001aab502 0.8 1 0.4 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 7. Normalized gate trigger voltage as a function of junction temperature 9397 750 13509 Fig 8. Normalized gate trigger current as a function of junction temperature © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 5 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 5 IT (A) 4 001aab505 3 IL(Tj) IL(25 °C) 2 001aab503 (1) (2) (3) 3 2 1 1 0 0.4 1.2 2 VT (V) 2.8 0 −50 0 50 100 Tj (°C) 150 VO = 1.0 V. RS = 0.27 Ω. (1) Tj = 125 °C (typical). (2) Tj = 25 °C (maximum). (3) Tj = 125 °C (maximum). RGK = 1 kΩ. Fig 9. On-state current characteristics Fig 10. Normalized latching current as a function of junction temperature 104 dVD/dt (V/µs) (1) 3 IH(Tj) IH(25 °C) 2 001aab504 001aab507 103 1 102 (2) 0 −50 0 50 100 Tj (°C) 150 10 0 50 100 Tj (°C) 150 RGK = 1 kΩ. (1) RGK = 1 kΩ. (2) Gate open circuit. Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values 7. Package information Epoxy meets requirements of UL94 V-0 at 1⁄8 inch. 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 6 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 8. Package outline Plastic surface mounted package with increased heatsink; 4 leads SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-11-10 Fig 13. Package outline SOT223 (SC-73) 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 7 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 9. Mounting 9.1 Mounting instructions 3.8 min 1.5 min 6.3 1.5 min (3×) 1.5 min 4.6 001aab508 2.3 Dimensions in mm. Fig 14. SOT223: minimum footprint 9.2 Printed-circuit board 36 18 60 9 4.6 4.5 10 7 15 50 001aab509 Dimensions in mm. Printed-circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). Fig 15. SOT223 printed-circuit board pad area 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 8 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 10. Revision history Table 6: Revision history Release date 20041112 Data sheet status Product data sheet Change notice Doc. number 9397 750 13509 Supersedes BT168GW_3 Document ID BT168GW_4 Modifications: BT168GW_3 BT168W_series_2 BT168W_series_1 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Product specification Product specification Product specification n.a. n.a. n.a. BT168W_series_2 BT168W_series_1 - 20010902 20010901 19970901 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 9 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 10 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mounting instructions . . . . . . . . . . . . . . . . . . . . 8 Printed-circuit board . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 12 November 2004 Document number: 9397 750 13509 Published in The Netherlands