BT258U-800R

Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258U series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258URepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A PINNING - SOT533 PIN NUMBER 1 2 3 tab DESCRIPTION cathode anode gate PIN CONFIGURATION SYMBOL a k 1 2 3 MBK915 g anode Top view LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. March 1999 1 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT258U series TYP. 70 MAX. 2.0 - UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.1 TYP. 50 0.4 0.3 1.3 0.4 0.2 0.1 MAX. 200 10 6 1.5 1.5 0.5 UNIT µA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ MIN. 50 TYP. 100 2 100 MAX. UNIT V/µs µs µs March 1999 2 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level BT258U series 8 7 6 5 4 3 2 1 0 Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT150 Tmb(max) / C a = 1.57 1.9 109 111 113 115 117 119 121 123 80 70 60 50 40 30 20 10 0 ITSM / A BT258 IT I TSM 2.2 2.8 4 time T Tj initial = 25 C max 0 1 2 3 IT(AV) / A 4 5 125 6 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). BT150 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 ITSM / A 24 20 16 12 IT(RMS) / A BT150 dI T/dt limit 100 I TSM T time IT 8 4 0 0.01 Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. IT(RMS) / A BT258 111 C Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 111˚C. VGT(Tj) VGT(25 C) 9 8 7 6 5 4 3 2 1 1.6 1.4 1.2 1 0.8 0.6 BT151 0 -50 0 50 Tmb / C 100 150 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. March 1999 3 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level BT258U series 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) BT150 30 25 IT / A Tj = 125 C Tj = 25 C Vo = 0.99 V Rs = 0.0325 ohms BT150+ 20 15 10 5 0 typ max 0 -50 0 50 Tj / C 100 150 0 0.5 1 VT / V 1.5 2 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 BT150 10 Zth j-mb (K/W) BT150 1 2 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1 P D tp t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVD/dt (V/us) 3 2.5 2 1.5 1 0.5 BT150 1000 RGK = 100 ohms 100 10 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. March 1999 4 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level MECHANICAL DATA Dimensions in mm Net Mass: 1.3 g BT258U series Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533 E E1 D1 mounting base D A1 A Q L 1 e1 e 2 b 3 wM c 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.89 0.71 b c D 7.28 6.94 D1 1.06 0.96 E 6.73 6.47 E1 5.36 5.26 e e1 L 9.8 9.4 Q 1.00 1.10 0.89 0.56 0.71 0.46 4.57 2.285 OUTLINE VERSION SOT533 REFERENCES IEC JEDEC TO-251 EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-18 Fig.13. SOT533 (TO251). pin 2 connected to mounting base. March 1999 5 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level DEFINITIONS Data sheet status Objective specification Product specification Limiting values BT258U series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1999 6 Rev 1.000