BTA204X-800C

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Passivated high commutation triacs in a plastic full pack envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber. BTA204X series B and C QUICK REFERENCE DATA SYMBOL PARAMETER BTA204XBTA204XVDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 500B 500C 500 4 25 MAX. 600B 600C 600 4 25 MAX. UNIT 800B 800C 800 4 25 V A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 123 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths ≤ 92 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 25 27 3.1 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. December 1998 1 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS BTA204X series B and C MIN. - TYP. MAX. 2500 UNIT V f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current 2 CONDITIONS BTA204XVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. MAX. ...B ...C 35 35 35 20 30 20 20 1.7 1.5 0.5 UNIT 0.25 - 1.4 0.7 0.4 0.1 50 50 50 30 45 30 30 mA mA mA mA mA mA mA V V V mA IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS BTA204XVDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A; dVcom/dt = 20V/µs; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. ...B 1000 6 ...C 1000 3 2 V/µs A/ms µs TYP. UNIT 2 Device does not trigger in the T2-, G+ quadrant. December 1998 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA204X series B and C 8 7 6 5 4 3 2 1 0 Ptot / W BT136 Ths(max) / C 81 86.5 5 IT(RMS) / A BT136X 92 C 4 1 = 180 120 90 60 30 92 97.5 103 108.5 114 3 2 1 119.5 0 1 2 3 IT(RMS) / A 4 125 5 0 -50 0 50 Ths / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BT136 1000 ITSM / A BT136 IT T ITSM 12 10 time IT(RMS) / A Tj initial = 25 C max 100 dIT /dt limit 8 6 4 T2- G+ quadrant 2 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 92˚C. VGT(Tj) VGT(25 C) 30 25 20 15 10 5 0 ITSM / A BT136 1.6 IT T I TSM time BT136 1.4 1.2 1 0.8 0.6 0.4 -50 Tj initial = 25 C max 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. December 1998 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA204X series B and C 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) BTA204 12 IT / A Tj = 125 C Tj = 25 C BT136 typ max T2+ G+ T2+ GT2- G- 10 Vo = 1.27 V Rs = 0.091 ohms 8 6 4 2 0 0 -50 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 TRIAC 10 Zth j-hs (K/W) BT136 with heatsink compound without heatsink compound unidirectional 1 bidirectional 2 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 0.1 P D tp t 0 50 Tj / C 100 150 10ms tp / s 0.1s 1s 10s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. 3 2.5 2 1.5 1 0.5 TRIAC 0 -50 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. December 1998 4 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 BTA204X series B and C 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1998 5 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation DEFINITIONS Data sheet status Objective specification Product specification Limiting values BTA204X series B and C This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 6 Rev 1.000