BU2520D

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 6 0.35 MAX. 1500 800 10 25 125 5.0 2.2 0.5 UNIT V V A A W V A V µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A IF = 6.0 A ICM = 6.0 A; IB(end) = 1.0 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b Rbe 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. November 1995 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1.0 A; VCE = 5 V IC = 6 A; VCE = 5 V IF = 6 A MIN. 100 7.5 800 5 - TYP. 13.5 50 7 - MAX. 1.0 2.0 300 5.0 1.3 23 10 2.2 UNIT mA mA mA V Ω V V V V Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs) 4.5 0.35 5.5 0.5 µs µs TYP. 115 MAX. UNIT pF TRANSISTOR IC DIODE ICM ICM 90 % t IC IB IBend t 20us 26us 64us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms (16 kHz). Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D + 150 v nominal adjust for ICM 1.0 0.9 0.8 VCESAT / V IC/IB = 5 4 3 BU2520D Lc 0.7 0.6 0.5 Tj = 25 C D.U.T. IBend LB Cfb Rbe 0.4 0.3 0.2 0.1 0 0.1 Tj = 125 C -VBB 1 IC / A 10 100 Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB VBESAT / V Tj = 25 C 100 hFE BU2520D Tj = 25 C 1.2 1.1 1.0 BU2520D 5V Tj = 125 C Tj = 125 C 10 1V 0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.1 0.6 1 IC / A 10 100 Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V BU2520D Tj = 25 C Tj = 125 C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 BU2520D 10 Tj = 125 C 8A 1 6A IC/IB= 3 4 5 5A IC = 4 A 0.1 0.1 1 IC / A 10 0.1 1 IB / A 10 Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC November 1995 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D Eoff / uJ 1000 10 Zth / (K/W) IC = 6 A 1 0.5 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06 P D tp D= tp T t 100 5A 0.1 T 10 0.1 1 IB / A 10 1E-04 1E-02 t/s 1E+00 Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; parameter frequency ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 Fig.12. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T IC / A 100 ts BU2520A tp = ICM = 0.01 30 us IC = 6A 5A tf 0.1 1 IB / A 10 ICDC 10 100 us Ptot 1 1 ms Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% 0.1 10 ms DC 0.01 0 20 40 60 80 100 Tmb / C 120 140 1 10 100 1000 VCE / V Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.13. Forward bias safe operating area. Tmb = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. November 1995 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D MECHANICAL DATA Dimensions in mm Net Mass: 5 g 15.2 max 14 13.6 2 max 4.25 4.15 4.6 max 2 4.4 21 max 12.7 max 2.2 max dimensions within this zone are uncontrolled 1 5.5 11 Fig.14. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". 0.5 min 13.6 min 2 3 1.15 0.95 0.5 M 1.6 0.4 November 1995 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Rev 1.200