BU4522AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Fall time CONDITIONS VBE = 0 V TYP. 7 6 285 170 MAX. 1500 800 10 25 45 3.0 400 230 UNIT V V A A W V A A ns ns Ths ≤ 25 ˚C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz ICsat = 7 A; f = 16 kHz ICsat = 6 A; f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 6 45 150 150 UNIT V V A A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. December 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 7 A; IB = 1.75 A IC = 7 A; IB = 1.75 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V MIN. 7.5 800 0.85 4.2 TYP. 13.5 0.94 10 5.8 MAX. 1.0 2.0 1.0 3.0 1.03 7.3 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A; (IB2 = -3.5 A) TYP. MAX. UNIT µs ns µs ns ts tf 3.5 285 4.3 400 ts tf f = 64 kHz; ICsat = 6 A; IB1 = 1.2 A; (IB2 = -3.6 A) 2.3 170 2.7 230 2 Measured with half sine-wave voltage (curve tracer). December 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF + 50v 100-200R TRANSISTOR IC DIODE ICsat t Horizontal Oscilloscope Vertical IB IB1 t 5 us 6.5 us 16 us IB2 100R 6V 30-60 Hz 1R VCE t Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (64 kHz). IC / mA ICsat 90 % IC 250 10 % 200 ts IB tf t 100 IB1 t 0 VCE / V min VCEOsust - IB2 Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times definitions. TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB IB1 t 20us 26us 64us VCE IB2 IBend LB T.U.T. Cfb -VBB t Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit. December 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF 100 hFE VCE = 1 V BU4522AF/X Ths = 25 C Ths = 85 C VBEsat \ V 1.3 1.2 1.1 IC = 7 A Ths = 25 C Ths = 85 C 1 10 0.9 0.8 0.7 1 0.01 IC = 6 A 0.1 1 10 IC / A 100 0.6 0 1 2 3 IB / A 4 Fig.7. High and low DC current gain. Fig.10. Typical base-emitter saturation voltage. BU4522AF/X 100 VCE = 5 V Ths = 25 C Ths = 85 C 5 ts/tf/ us BU4522AF/X 16kHz 4 ICsat = 7 A Ths = 85 C Freq = 16 kHz 3 hFE 10 2 1 1 0.01 0 0.1 IC / A1 10 100 0 0.5 1 1.5 IBend / A 2 Fig.8. High and low DC current gain. Fig.11. Typical collector storage and fall time. IC =7 A; Tj = 85˚C; f = 16kHz ts/tf/ us 5 10 VCEsat (V) Ths = 25 C Ths = 85 C BU4522AF/X BU4522AF/X 64kHz 4 ICsat = 6 A Ths = 85 C Freq = 64 kHz 1 3 0.1 IC/IB = 5 2 1 0.01 0.1 1 10 IC / A 100 0 0 0.5 1 1.5 IB / A 2 Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical collector storage and fall time. IC = 6 A; Tj = 85˚C; f = 64 kHz December 1997 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound IC / A 30 BU2522AF 20 10 0 20 40 60 80 Ths / C 100 120 140 0 0 500 VCE / V 1000 1500 Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C Zth / (K/W) 10 Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax BU4522AF 10 9 Ic(sat) (A) 0.5 1 0.2 0.1 0.05 0.1 0.02 8 7 6 5 4 0.01 P D tp D= tp T t 1.0E-01 3 2 1 0 0 10 20 40 50 60 70 30 Horizontal frequency (kHz) 80 90 100 0 0.001 1.0E-07 1.0E-05 1.0E-03 T 1.0E-01 t/s Fig.14. Transient thermal impedance. Fig.17. ICsat during normal running vs. frequency of operation for optimum performance VCC LC IBend VCL LB T.U.T. CFB -VBB Fig.15. Test Circuit RBSOA. December 1997 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.18. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1997 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 7 Rev 1.000